Abstract: An automatic cutout or a power circuit breaker with high current-limiting capacity contains no conductor connections of any kind, has only two weld or solder joints and requires no adjustment. This automatic cutout can be assembled progressively and purely mechanically from a minimum number of piece parts, without inconvenient connecting wires and without additional adjustment. Welding is prevented because the spark is discharge swiftly at the contacts and pressure of the movable contact in its bearing is guaranteed. As flexible connecting wires are dispensed with, fewer movable parts are necessary, and hence contact opening is more rapid. The excess-current trigger or the overcurrent trip is already calibrated and therefore the protective switch requires no adjustment. The excess-current trigger remains calibrated even after numerous disconnections.

Abstract: A monolithic integrated semiconductor device is described, wherein for the adjustment of the breakdown voltage a cover electrode (7) is disposed in the area of the pn-junctions and a corresponding potential is applied through a voltage divider (1) for adjusting the breakdown voltage. For maintaining a temperature independent breakdown voltage it is provided that the voltage divider (1) consists of resistors (R1, R2) in the form of diffused zones which have different doping levels. The resulting different temperature coefficients of the resistors (R1,R2) of the voltage divider cause a temperature dependent potential change of the cover electrode potential, whereby a temperature stabilization of the breakdown voltage is obtained.

Abstract: A transistor arrangement, particularly for the fast switching of inductive loads, includes a driving first transistor and a power output second transistor (T1, T2) interconnected as a Darlington pair having a base terminal, an emitter terminal and a collector terminal. A third transistor (T3) has its collector connected to the base of the first transistor (T1) and its emitter connected to the emitter terminal (E). A fourth transistor (T4) of a conductivity type opposite to that of the first, second and third transistors has its base connected to the collector terminal, its emitter connected to the base terminal, and its collector connected to the base of the third transistor (T3). This structure is particularly suited for a monolithic integration.

Abstract: In order to connect small electric apparatus having for example a two-pin configuration or a European flat plug into any of the international standard plugging systems according to need, a handy pentaprism-shaped connector has on its sides plug pin arrangements (2) for five different plugging systems and contains a revolving body (4, 7) which has in the area of the top and/or bottom surface of the connector sockets for two more plugging systems. These can be manually snapped (8, 9) into contact (3, 5, 6) with the plug pin arrangement (2) of the connector needed at any time, the remaining plug pins being then absolutely deprived of any voltage.

Abstract: A semiconductor arrangement is suggested which is provided with a capacity transistor and a drive transistor in form of a Dralington-circuit. Thereby, the two transistors are monolithically integrated with a planar technique in a common substrate (8), which forms the two collector zones of the two transistors (T1,T2). A passivation layer (14) covers the main face of substrate (8) covering this main surface with the exception of contact windows. A cover electrode (13) is disposed above the passivation layer in the area between the collector zone and the base zone (4) of the capacity transistor (T2), whereby this passivation layer is connected with a resistor strip (2) at a distance from the base zone (4) for adjusting its potential. An additional guard strip (3) is diffused into the main surface between the resistor strip (2) and the base zone (4).

Abstract: A service-interval display for motor vehicles, which generates a signal when a limiting parameter value is reached. Total fuel consumption serves as the basic parameter instead of the distance travelled, previously employed. Other parameters may serve to modify the generation of the signal to cause an earlier or later warning to be displayed.

Abstract: A Darlington transistor circuit having a power transistor and a driver transistor is proposed. The two transistors are monolithically integrated in a common substrate (10) by a planar process, the substrate forming the collector zones of the two transistors. On the main surface of the substrate (10) there is a passivation layer (13) covering this main surface with the exception of contact windows. The base-collector junctions of the two transistors are protected by a metal electrode (15), which is located above the passivation layer (13) and extends up to a stop ring (14), which is disposed beneath the passivation layer (13) in the substrate (10). The potential at the cover electrode (15) is adjustable with the aid of a voltage divider (16). (FIG. 3).

Abstract: A planar semiconductor structure is proposed which has a monocrystalline semiconductor chip (10) of a specific conductivity type, a first zone (11) of the opposite conductivity type introduced into the semiconductor chip (10) by diffusion from a main surface and together with the material making up the semiconductor chip (10) forming a p-n junction (12), and a passivation layer (13) covering this same main surface of the semiconductor chip (10) with the exception of contact windows. A second, annular zone (14) acting as a stop ring and having the same conductivity type as the basic material making up the semiconductor chip (10) but a higher concentration of impurities is introduced into the semiconductor chip (10) from the same main surface such that it surrounds the first zone (11).

Abstract: In a three-stage Darlington transistor circuit, the base of the middle transistor is connected to the series combination of a resistance and a Zener diode, with the Zener diode anode being connected to the resistance. A voltage divider is provided between the collector and emitter of the power transistor. For reducing the loading and deviation from nominal value of the voltage divider with change of temperature, an auxiliary transistor (T.sub.4) is provided having its base connected to one tap of the voltage divider and its emitter to the cathode of the Zener diode. The collector of the auxiliary transistor is provided in the integrated circuit substrate in common with the collectors of the transistors of the Darlington circuit. The other tap of the voltage divider is provided for emitter-collector clamping voltage purposes.

Abstract: A service interval display unit for a motor vehicle for alerting the operator of required maintenance wherein actual distance traveled by the vehicle is monitored, and as a factor in determining the service interval, operating parameters such as engine speed, coolant temperature, oil temperature, and/or fuel consumption rate are taken into consideration on a weighted basis to assert earlier a service signal in the display unit when the engine experiences increased periods of higher loads. The display unit includes a series of indicators which are successively extinguished upon attainment of subintervals during the maintenance cycle and warning lights which are energized after attainment of the service interval. Additional warning lights also are provided for emphasizing the expiration of the service interval when the vehicle is operated successive fixed distance intervals beyond the regular service interval.

Abstract: A service-interval display for motor vehicles, delivers a signal after a fixed distance has been traversed, the fixed distance (D) is divided into several fixed service distance intervals (i.sub.d) of equal length, and a plurality of individual signal elements, each of which changes its switch status at the end of successive intervals, is assigned to each of these intervals. The number of signal elements activated is an indication of the incremental approach to arrival at and travel beyond the fixed distance (D).

Abstract: A testing device is disclosed for testing structural parts and functions of motor vehicles according to a test program having successive program stages. The testing device comprises a program switch for establishing circuit connections associated with the stages of the test program and for controlling a first indicator device for reproduction of the corresponding measurements. The program switch of the device further controls a second indicator device for reproduction of stored, rated measurements associated with the program stages so that a direct comparison of the rated and actual measurements can be quickly made.

Abstract: An electrical full protection circuit breaker for interrupting a current circuit in response to an overload current, or a short circuit current, or in response to an earth leakage or fault current, includes the structural and functional combination of one or several single pole circuit breakers with an earth leakage current circuit breaker. Each circuit breaker has a narrow and compact structure and the same housing contour. The fault current circuit breaker member, which is coupled with one or more single pole circuit breakers, has its own contact interruption elements. Additionally, the fault current circuit breaker is provided in its outwardly located terminal connection zone with a freely accessible summing current transformer which is constructed as a bushing transformer.

Abstract: A semiconductor electrode is prepared by (a) contacting a semiconductor w a first contacting metal (capable of forming an alloy with the semiconductor), (b) contacting the first contacting metal with a ductile layer of a second contacting metal, (c) heating the resulting combination so as to form, simultaneously, a liquid phase between the semiconductor and the first contacting metal and between the first contacting metal and the ductile second contacting metal, however leaving intact a major portion of the ductile second contacting metal layer, and (d) cooling the thus obtained product whereby a solder contact which is resistant to load fluctuations can be readily made on the ductile layer with known semiconductor hard solder.