Abstract: A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns at room temperature.

Abstract: A pneumatic function generator system for maintaining a desired pressure and/or a desired rate of pressure change with respect to time. The pneumatic function generator system may include a servo valve for controlling the amount of fluid traveling therethrough, a primary sensor for measuring the pressure of the fluid and for generating an analog signal corresponding to the pressure of the fluid, an analog-to-digital module for converting the analog signal to a digital value, and a digital device for receiving the digital value and, depending on the digital value, generating a control signal that is used to control the opening and closing of the servo valve.

Abstract: The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.

Abstract: A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

Abstract: A device comprises a luminous indicator intended to indicate an emergency exit and capable of being placed in at least one of three different states, a standby state, in which it emits a first luminous radiation which is continuous and which exhibits a first intensity, an alert state, in which it emits a second luminous radiation which is discontinuous and which exhibits a second intensity greater than the first intensity, and a third state, and an operating unit for operating the luminous indicator in such a way as to place it in the standby state, in a normal situation, in the alert state, during an emergency evacuation via the emergency exit, which is passable, and in the third state, during an emergency evacuation when the emergency exit is impassable.

Abstract: A pneumatic function generator system for maintaining a desired pressure and/or a desired rate of pressure change with respect to time. The pneumatic function generator system may include a servo valve for controlling the amount of fluid traveling therethrough, a primary sensor for measuring the pressure of the fluid and for generating an analog signal corresponding to the pressure of the fluid, an analog-to-digital module for converting the analog signal to a digital value, and a digital device for receiving the digital value and, depending on the digital value, generating a control signal that is used to control the opening and closing of the servo valve.

Abstract: A switching device for switching at a high operating voltage includes an LV switching element and a first HV switching element that are connected together in a cascode circuit. Furthermore, at least a second HV switching element is connected in series with the first HV switching element. A first protection element is connected between the HV grid terminals of the first and second HV switching elements, respectively.

Abstract: A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.

Abstract: The invention provides assistance, by providing a control interface between a recognition or announcement/dialog function with voice recognition functionality and a conference management function, via which the conference can be controlled and monitored in an automated manner. The recognition or announcement/dialog function switches to the individual conferences in succession under the control of the conference management function, monitors the combined stream of all voice data emitted by the conferees in an interim check. If disruptive data is detected, the conference management function associates the disruptive data with the conferee emitting the data. The recognition or announcement/dialog function to the individual participants in the conference is switched in succession. If the conferee emitting the disruptive data is detected in this process and this conferee is identified as a disruptive party as a result, the conferee is automatically switched to silent or removed entirely from the conference.

Abstract: A plug-in coupling having a base body (6), a sealing ring (12, 13), a locking ring (40) and an annular body which can be connected to the base body (6). A pipe end (4, 5) can be locked in position by the locking ring (40). The plug-in coupling of the invention enables a connection to be made with at least one pipe end in a simple, functionally reliable manner, in such a way that pipes made of different materials can be used together. The pipe ends (4, 5) can be inserted into an axial annular gap or space (27) between the base body (6) and the annular body (18, 19) in such a way that the sealing ring (12) lies adjacent the interior of the pipe end (4, 5), making a good seal with the pipe end, and also in such a way that the locking ring (40) is located in the annular gap (27). The locking ring (40) is prestressed and adjoins the locking surface (20) of the annular body (18) on one side and the exterior surface of the inserted pipe end (4, 5) on the other side.

Abstract: A control interface is provided between an announcement/dialog function with voice recognition functionality and a conference management function. The conference can be booked and controlled via this interface. In this case, the conference management function receives the data relevant to the conference in a dialog with the conferees, reserves the relevant resources in advance and access the control functions of the conference directly via a further interface.

Abstract: A control interface and method between an announcement/dialog function with voice recognition functionality and a conference management function, via which the conference can be initiated and controlled during its course. The conference management function receives the characteristic data of relevance to the conference in its dialog with the conference leader and the conferees via the announcement/dialog function, reserves the corresponding resources in advance and has direct access via a further interface to the conference control functions, which can also be influenced during the conference in dialog with the conferees.

Abstract: The invention relates to a switching device comprising a) at least one MOSPET switching element (2) and b) at least one JFET protective element (3), which is connected electrically in series to the switching element and which limits the electric current to a maximum current (saturated current) and c) control elements (4, 5, C, R3, 31), which increase the maximum current of the JFET protective element c1) during the closing operation or in a time-delayed manner, at least in the temporal mean, to at least a higher value and c2) subsequently reduce said maximum current to at least a lower value. The advantage of said switching device is that it allows higher starting or closing overcurrents, which are subsequently limited.

Abstract: A semiconductor configuration for current control has an n-type first semiconductor region with a first surface, a p-type covered island region, within the first semiconductor region, with a second surface, an n-type contact region arranged on the second surface within the island region and a lateral channel region, formed between the first and second surface as part of the first semiconductor region. The channel is part of a current path from or to the contact region. The current within the lateral channel region may be influenced by at least one depletion zone. A lateral edge of the lateral channel region extends as far as the contact region.

Abstract: A switching device includes a working circuit, to which an operating voltage can be or is applied to which has at least one electronic switching element. This switching element includes at least one control terminal for applying a switching signal and is switched off or switched on depending on the switching signal. At least one electronic protection element is for protecting the switching element in its switched state from excessive Joule losses in the event of danger, especially in the event of an overload or a short circuit. The protection element bears the predominant part of the operating voltage that is released at the working circuit.

Abstract: A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.

Abstract: Luminous alerting device for indicating an emergency exit.

Abstract: A switching device for switching at a high operating voltage includes an LV switching element and a first HV switching element that are connected together in a cascode circuit. Furthermore, at least a second HV switching element is connected in series with the first HV switching element. A first protection element is connected between the HV grid terminals of the first and second HV switching elements, respectively.

Abstract: The present invention relates to a device for fixing a tubular element in a cavity, which device is made up of hoops made of an elastically flexible material disposed in cross-sectional planes of said cavity, and means for retaining said element, said device being characterized in that, along the longitudinal axis of said cavity, said hoops are secured together by a flexible longitudinal support and are interconnected by a flexible membrane.

Abstract: A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.