Abstract: A method of transmitting data between different clock domains includes receiving data bits on the basis of a receiving clock, sequentially storing the data bits in a ring buffer, simultaneously transmitting a number of the stored data bits from the ring buffer on the basis of a first transmitting clock, and transmitting the stored data bits from the ring buffer on the basis of a second transmitting clock.

Abstract: A memory arrangement includes an interface configured to transmit data in the form of data packets according to a predefined protocol. The memory arrangement includes at least two memory banks. Each memory bank includes at least one memory cell. The memory arrangement includes at least two memory bank access devices configured to facilitate accessing the data of the at least one memory cell of each of the at least two memory banks. The memory arrangement includes at least two data packet processing devices configured to encode and/or decode the data packets. The at least two data packet processing devices are assigned to different memory bank access devices.

Abstract: A memory module device includes a printed circuit board, a plurality of memory modules and a buffer module. Lines are provided in or on the printed circuit board to connect the buffer module to the memory modules. The memory modules are combined at least partially to form memory module stacks.

Abstract: The invention provides a data handover unit for transferring data from a first clock domain to a second clock domain, comprising: a first clock unit operable to supply a first clock signal; a selector stage operable to sample an incoming data stream with respect to the first clock signal; a second clock unit operable to supply a second clock signal; a storage unit coupled with the selector stage, wherein the storage unit has a first plurality of storage elements each of which is operable to store one bit of data of the sampled data stream, an output unit for parallelly reading out a frame of data from a second plurality of storage elements included in the first plurality of storage elements with respect to the second clock signal, wherein the selector stage is further operable to successively write the data bits of the sampled data stream into the first plurality of storage elements and to store the respective data bits of the sampled data stream in the respective storage elements until they were read out by

Abstract: A synchronous parallel/serial converter is disclosed. In one embodiment, the a synchronous parallel/serial converter that receives a parallel n-bit input signal and comprising a first shift register that receives an odd-numbered part of the input signal with a first load signal in synchronism with a clock signal having a clock rate half the clock rate of a system clock, and provides a serial output as a first one-bit signal sequence; a second shift register that receives an even-numbered part of the input signal with a second load signal synchronism with the clock signal and provides a serial output as a second one-bit signal sequence; and a fusion unit that fuses the first serial one-bit signal sequence synchronously with the clock signal and the second serial one-bit signal sequence in synchronism the clock signal to form a serial one-bit output signal.

Abstract: A digital control loop and a method for clock generation. A control loop includes at least one phase detector configured to detect a phase shift of a feedback signal relative to a reference clock signal and output a correction signal on the basis of the phase shift detected. At least one control loop filter is configured to output, on the basis of the correction signal, a first control signal and a second control signal, the first control signal being substantially the same as the second control signal except that oscillations are suppressed in the second control signal. At least one first phase generator is configured to output a first clock signal on the basis of the first control signal and the first phase reference signal, wherein the first clock signal is transmitted at least partially as feedback signal to the phase detector.

Abstract: A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.

Abstract: Methods and apparatus for timing recovery phase locked loops. One embodiment provides a phase detectors for generating phase difference signals on the basis of a received feedback signal and an input clock signal and an input data signal, respectively. A digital control unit is adapted to generate a control signal depending on the first and second phase difference signals A digitally controlled oscillator generates an output clock signal depending on the control signal. A feedback unit feeds the output clock signal to an input of the first phase detector as the feedback signal. And a data acquisition unit receives the data signal and the output clock signal of the digitally controlled oscillator to provide a data output signal synchronized to the output clock signal.

Abstract: A method transfers data in a memory device including at least one memory module and a memory controller. The method includes coupling the memory module to the memory controller via a mechanically detachable data transfer connection, transferring data between the memory controller and an interface unit assigned to the memory module and disposed on the same side of the mechanically detachable data transfer connection as the memory controller, and transferring data between the interface unit and the memory module via the mechanically detachable data transfer connection.

Abstract: One embodiment of the present invention provides a memory device comprising an array of memory cells, a control logic for writing data to and reading data from the array of memory cells, the control logic comprising a first interface, an input/output section for exchanging data, address and control signals with a circuit external to the memory device, the input/output section comprising a second interface for sending signals to and receiving signals from the first interface of the control logic, and a synchronizing facility connected to the first interface of the control logic and to the second interface of the input/output section for synchronizing the first interface of the control logic and the second interface of the input/output section.

Abstract: A method generates a sampling clock signal in a communication block of a memory device having a plurality of communication blocks which are distributed in the memory device. The method includes receiving an input clock signal in the communication block, generating, only in response to the input clock signal, a local clock signal having a predetermined phase relationship with respect to the input clock signal, and generating the sampling clock signal based on the local clock signal.

Abstract: A memory module is configured to be arranged in a series configuration of memory modules. The memory module includes a clock synthesizer unit configured to regenerating an input clock signal of the memory module and to produce a regenerated clock signal. A first receiver is configured to receive a command and write data signal from a memory controller or from another memory module located upstream in the series configuration. A first transmitter is configured to transmit a read data signal from the memory module to the memory controller or to a previous memory module of the series configuration and to synchronize the read data signal transmitted from the memory module to the regenerated clock signal of the memory module. A second receiver is configured to receive the read data signal from a next memory module of the series configuration.

Abstract: A line driver (3) for transmitting data with high bit rates, in particular for wire-bound data transmission in the full-duplex process, comprises a differential pair with differential pair transistors (14, 15) for generating transmission impulses as a function of the data to be transmitted, whereby the transmission impulses are preferably output via cascode transistors (16, 17), each with the differential pair transistors (14, 15) forming a cascode circuit, onto the data transmission line (8, 9) connected to the line driver (3).

Abstract: Method and apparatus for communication (e.g., transmitting and/or receiving) command, address and data signals from a memory device to a memory controller or vice versa. The data signals are transferred with a first rate and command signals and/or address signals are transferred with a second rate lower than a first rate. Additionally or alternatively a command sequence code identifying a command sequence from a predefined group of command sequences is transferred with the first or with the second rate.

Abstract: The invention relates to a VGA stage having a novel circuit configuration for amplifying/attenuating a differential input signal which is transmitted via a transmission line (H). The VGA stage comprises an operational amplifier (OPV1, OPV2), which is connected as shunt feedback, for amplifying the input signal; a string of resistors (R01, R01?) for attenuating the signal; and a control device (2) for switching the string of resistors (R01, R01?).

Abstract: A semiconductor memory system is disclosed. In one embodiment, the semiconductor memory system and memory module of the present invention provides a buffer, wherein at least one write buffer chip on the memory module is only buffering and registering write data, command and address signals written from a memory controller to the memory chips. As read data are written back from each memory chip directly to the memory controller through unidirectional point-to-point read data lines the present semiconductor memory system achieves a low latency as compared with a fully buffered DIMM concept. As read data are only unidirectional a high transmission bandwidth can be achieved.

Abstract: A semiconductor memory chip includes: a reception interface section for receiving external data, command, and address signals in form of serial signal frames; an intermediate data buffer for intermediately storing write data and, optionally, write data mask bits to be written to a memory cell array; a memory core having a bank organized memory cell array; a decoder section for decoding an address derived from a signal frame received from the reception interface section for writing/reading data in/from one or more memory banks of the memory cell array in accordance with a write/read command within one or more received signal frames; and a frame decoder provided as an interface between the reception interface section and the memory core for decoding one or more commands included in one or more frames and outputting data addresses, command, and read/write access indication signals to the memory core and to the intermediate data buffer.

Abstract: In a semiconductor memory system, the memory chips are linked to a memory module in a shared loop forward architecture and connected in a point-to-point connection to a memory controller. Each memory chip includes a high-speed interface circuit including: a read and write data/command-and-address signal re-driver/transmitter path for re-driving serial read data and write data/command-and-address signals not destined for the semiconductor memory chip; and a main signal path which includes a serial-to-parallel converter and a synchronizer for serial-to-parallel converting and synchronizing with a reference clock signal write data/command-and-address signals destined for the semiconductor memory chip as well as a parallel-to-serial converter for parallel-to-serial converting read data signals read from a memory core of the memory chips, and a switch for inserting the parallel-to-serial converted read data signals into the re-driver/transmitter path.

Abstract: A phase locked loop having reduced inherent noise is provided. The phase locked loop comprises a controlled oscillator for outputting a periodic output signal as a result of a control signal; a feedback unit for providing at least two periodic feedback signals having a constant phase shift to each other and each depending on the output signal; a phase/frequency detector for providing difference signals each depending on a periodic input signal and at least one of the feedback signals; and a control circuit for providing the control signal to the controlled oscillator depending on the difference signals.

Abstract: A semiconductor memory chip includes a re-drive unit for re-driving electrical signals to at least one semiconductor memory chip connected thereto. The re-drive unit includes a direct line connection between two connecting nodes, i.e., one input terminal and one output terminal of the semiconductor memory chip.