Abstract: A method of operating a memory circuit includes providing the memory circuit. The memory circuit includes a memory cell; a word line connected to the memory cell; a first local bit line and a second local bit line connected to the memory cell; and a first global bit line and a second global bit line coupled to the first and the second local bit lines, respectively. The method further includes starting an equalization to equalize voltages on the first and the second local bit lines; stopping the equalization; and after the step of starting the equalization and before the step of stopping the equalization, writing values from the first and the second global bit lines to the first and the second local bit lines.

Abstract: A method of operating a memory circuit includes providing the memory circuit. The memory circuit includes a memory cell; a word line connected to the memory cell; a first local bit line and a second local bit line connected to the memory cell; and a first global bit line and a second global bit line coupled to the first and the second local bit lines, respectively. The method further includes starting an equalization to equalize voltages on the first and the second local bit lines; stopping the equalization; and after the step of starting the equalization and before the step of stopping the equalization, writing values from the first and the second global bit lines to the first and the second local bit lines.

Abstract: An OTP memory array includes a bit line coupled to a plurality of memory banks. Each memory bank includes a plurality of memory cells, a footer, and a bias device, and is associated with a current mirror. When a memory cell is activated (e.g., for reading) the memory bank including the activated memory cell is referred to as an activated memory bank and other banks are referred to as deactivated memory banks. A current tracking device serves to compensate for bit line leakage current in deactivated memory cells in the activated memory bank. Further, footers and bias devices in deactivated memory banks and associated current mirrors are configured to reduce/eliminate bit line current leakage through deactivated memory cells in deactivated memory banks.

Abstract: A one time programming (OTP) memory array is divided into a user section and a test section. The cells in the user section and in the test section are configured to form a checkerboard pattern, that is, having repeats of one user cell and one test cell in both column and row directions. Programming the test section and various additional tests are performed to both the user and test sections and other circuitry of the memory array while the user section is not programmed. Even though the OTP user section is not programmed or tested, the provided tests in accordance with embodiments of the invention can provide a very high probability that the OTP memory including the user section is of high quality, i.e., the OTP cells in the user section can be programmed and function appropriately.

Abstract: A circuit and method for a sense amplifier for sensing the charge stored by a memory cell is disclosed. The memory cell is coupled to a bit line, a complementary bit line and a differential sense amplifier is coupled to the bit line and the complementary bit line. A control signal couples a reference voltage to the complementary bit line. A positive precharge voltage is applied to the bit line and complementary bit line prior to the sense amplifier being enabled. The memory cell outputs a voltage to the bit line responsive to a word line, and the sense amplifier senses the differential voltage between the bit line and the complementary bit line responsive to a sense enable signal. A voltage regulator for generating the reference voltage, preferably about 80% of a positive supply voltage, is disclosed. A method of sensing data stored by a memory cell is disclosed.

Abstract: A memory circuit includes at least one memory cell for storing a charge representative of a datum. The memory cell is coupled with a word line and a bit line. The memory circuit includes a means for providing a bit line reference voltage VBLref to the bit line, wherein a VBLref/VDD ratio of the bit line reference voltage VBLref to a power voltage VDD is adjustable corresponding to a change of the power voltage VDD.

Abstract: A memory circuit includes at least one memory cell for storing a charge representative of a datum. The memory cell is coupled with a word line and a first bit line. At least one bit line equalization transistor is coupled between the first bit line and a second bit line. A bit line equalization circuit is coupled with the bit line equalization transistor. The bit line equalization circuit is configured for providing a pulse to the bit line equalization transistor to substantially equalize voltages of the first bit line and the second bit line during a standby period before an access cycle of the memory cell.

Abstract: A method of operating a memory includes performing a write operation and a read operation on a memory cell. The write operation includes starting a first global bit line (GBL) pre-charge on a GBL; and after the first GBL pre-charge is started, enabling a word line to write into the memory cell, wherein the steps of starting the first GBL pre-charge and enabling the word line have a first time interval. The read operation includes starting a second GBL pre-charge on the GBL; and after the second GBL pre-charge is started, enabling the word line to read from the memory cell, wherein the steps of starting the second GBL pre-charge and enabling the word line have a second time interval. The first time interval is greater than the second time interval.

Abstract: The present invention provides extended precision in SIMD arithmetic operations in a processor having a register file and an accumulator. A first set of data elements and a second set of data elements are loaded into first and second vector registers, respectively. Each data element comprises N bits. Next, an arithmetic instruction is fetched from memory. The arithmetic instruction is decoded. Then, the first vector register and the second vector register are read from the register file. The present invention executes the arithmetic instruction on corresponding data elements in the first and second vector registers. The resulting element of the execution is then written into the accumulator. Then, the resulting element is transformed into an N-bit width element and written into a third register for further operation or storage in memory. The transformation of the resulting element can include, for example, rounding, clamping, and/or shifting the element.

Abstract: A circuit and method for a sense amplifier for sensing the charge stored by a memory cell is disclosed. The memory cell is coupled to a bit line, a complementary bit line and a differential sense amplifier is coupled to the bit line and the complementary bit line. A control signal couples a reference voltage to the complementary bit line. A positive precharge voltage is applied to the bit line and complementary bit line prior to the sense amplifier being enabled. The memory cell outputs a voltage to the bit line responsive to a word line, and the sense amplifier senses the differential voltage between the bit line and the complementary bit line responsive to a sense enable signal. A voltage regulator for generating the reference voltage, preferably about 80% of a positive supply voltage, is disclosed. A method of sensing data stored by a memory cell is disclosed.

Abstract: An architecture, circuit and method for providing a high speed operation DRAM memory with reduced cell disturb. A DRAM global bit line select circuit couples a pair of local bit lines and the associated sense amplifier to the global bit lines using a circuit optimized for high speed operation. The select circuit and method also reduces or eliminates the bit line disturb effect of the prior art. The circuit and architecture of the DRAM incorporating the select circuit is particularly useful for embedding DRAM memory with other logic in an integrated circuit. For a read operation the select circuit discharges the appropriate global bit line directly to ground thus speeding the read cycles. For a write operation, a dedicated control line is used to couple write data to from the global bit lines to the selected local bit lines. Methods for operating the DRAM and the select circuits are disclosed.

Abstract: A system and a method is disclosed for allowing bandgap circuitry to function on a low supply voltage integrated circuit, and for using the reference voltage (Vbg) generated by the bandgap circuitry to enable a reference voltage to control system voltage. An illustrative embodiment comprises a charge pump to raise a supply voltage to a system voltage, and an open loop controller, which provides a first signal to activate the charge pump, enabling a bandgap circuit, which outputs a bandgap voltage reference. Further, the system comprises a closed loop controller, which regulates the system voltage by comparing the system voltage to the bandgap reference voltage. Upon the system voltage falling below a target voltage, the closed loop controller provides a second signal to activate the charge pump. Additionally the system comprises a switch controller, which selects the closed loop controller upon sensing the bandgap circuit is active.

Abstract: The present invention provides extended precision in SIMD arithmetic operations in a processor having a register file and an accumulator. A first set of data elements and a second set of data elements are loaded into first and second vector registers, respectively. Each data element comprises N bits. Next, an arithmetic instruction is fetched from memory. The arithmetic instruction is decoded. Then, the first vector register and the second vector register are read from the register file. The present invention executes the arithmetic instruction on corresponding data elements in the first and second vector registers. The resulting element of the execution is then written into the accumulator. Then, the resulting element is transformed into an N-bit width element and written into a third register for further operation or storage in memory. The transformation of the resulting element can include, for example, rounding, clamping, and/or shifting the element.

Abstract: A method of operating a memory circuit includes providing the memory circuit. The memory circuit includes a memory cell; a word line connected to the memory cell; a first local bit line and a second local bit line connected to the memory cell; and a first global bit line and a second global bit line coupled to the first and the second local bit lines, respectively. The method further includes starting an equalization to equalize voltages on the first and the second local bit lines; stopping the equalization; and after the step of starting the equalization and before the step of stopping the equalization, writing values from the first and the second global bit lines to the first and the second local bit lines.

Abstract: A method of operating a memory includes performing a write operation and a read operation on a memory cell. The write operation includes starting a first global bit line (GBL) pre-charge on a GBL; and after the first GBL pre-charge is started, enabling a word line to write into the memory cell, wherein the steps of starting the first GBL pre-charge and enabling the word line have a first time interval. The read operation includes starting a second GBL pre-charge on the GBL; and after the second GBL pre-charge is started, enabling the word line to read from the memory cell, wherein the steps of starting the second GBL pre-charge and enabling the word line have a second time interval. The first time interval is greater than the second time interval.

Abstract: A system and a method is disclosed for allowing bandgap circuitry to function on a low supply voltage integrated circuit, and for using the reference voltage (Vbg) generated by the bandgap circuitry to enable a reference voltage to control system voltage. An illustrative embodiment comprises a charge pump to raise a supply voltage to a system voltage, and an open loop controller, which provides a first signal to activate the charge pump, enabling a bandgap circuit, which outputs a bandgap voltage reference. Further, the system comprises a closed loop controller, which regulates the system voltage by comparing the system voltage to the bandgap reference voltage. Upon the system voltage falling below a target voltage, the closed loop controller provides a second signal to activate the charge pump. Additionally the system comprises a switch controller, which selects the closed loop controller upon sensing the bandgap circuit is active.

Abstract: The invention relates to electrophoretic displays comprising core-shell pigment particles having a core of low specific gravity and low refractive index and a shell of high refractive index.

Abstract: An architecture, circuit and method for providing a high speed operation DRAM memory with reduced cell disturb. A DRAM global bit line select circuit couples a pair of local bit lines and the associated sense amplifier to the global bit lines using a circuit optimized for high speed operation. The select circuit and method also reduces or eliminates the bit line disturb effect of the prior art. The circuit and architecture of the DRAM incorporating the select circuit is particularly useful for embedding DRAM memory with other logic in an integrated circuit. For a read operation the select circuit discharges the appropriate global bit line directly to ground thus speeding the read cycles. For a write operation, a dedicated control line is used to couple write data to from the global bit lines to the selected local bit lines. Methods for operating the DRAM and the select circuits are disclosed.

Abstract: The present invention provides alignment and ordering of vector elements for SIMD processing. In the alignment of vector elements for SIMD processing, one vector is loaded from a memory unit into a first register and another vector is loaded from the memory unit into a second register. The first vector contains a first byte of an aligned vector to be generated. Then, a starting byte specifying the first byte of an aligned vector is determined. Next, a vector is extracted from the first register and the second register beginning from the first bit in the first byte of the first register continuing through the bits in the second register. Finally, the extracted vector is replicated into a third register such that the third register contains a plurality of elements aligned for SIMD processing. In the ordering of vector elements for SIMD processing, a first vector is loaded from a memory unit into a first register and a second vector is loaded from the memory unit into a second register.

Abstract: The present invention provides alignment and ordering of vector elements for SIMD processing. In the alignment of vector elements for SIMD processing, one vector is loaded from a memory unit into a first register and another vector is loaded from the memory unit into a second register. The first vector contains a first byte of an aligned vector to be generated. Then, a starting byte specifying the first byte of an aligned vector is determined. Next, a vector is extracted from the first register and the second register beginning from the first bit in the first byte of the first register continuing through the bits in the second register. Finally, the extracted vector is replicated into a third register such that the third register contains a plurality of elements aligned for SIMD processing. In the ordering of vector elements for SIMD processing, a first vector is loaded from a memory unit into a first register and a second vector is loaded from the memory unit into a second register.