Abstract: A sense amplifier is provided for reading data in a multiple-state memory cell of a resistive memory array in response to a read voltage applied across the sensed memory cell, including a differential amplifier having first and second input nodes. A sense circuit determines the current in the memory cell with the read voltage applied thereto and applies a sense current representative of the memory cell current to the first input node of the differential amplifier. A reference circuit has first and second resistive elements for applying a reference current to the second input node of the differential amplifier to provide a reference value against which to compare the sense current to determine the state of the memory cell. The first resistive element has a resistance representative of a first state of the memory cell, and the second resistive element has a resistance representative of a second state of the memory cell.