Abstract: A first luminescent material having peak emission wavelengths in the range of 1600-1900 nm comprises a Cr3+ and Tm3+ co-doped garnet phosphor having the general formula (Gd3-u-yTmyREu) [Ga2-a-b-d-eLuaCrbScd Ale]{Ga3-cAlc}O12 with RE=La, Y, Yb, Nd, Ho, Er, Ce, Lu, Sc and 0?u?2, 0<y?1.5, 0?a?1, 0<b?0.3, 0?c?3, 0?d?0.5, 0?e?1.8. A second luminescent material having peak emission wavelengths in the range of 1400-1600 nm comprises a Cr3+ and Ni2+ co-doped garnet phosphor having the general formula (Gd3-uREu) [Ga2-a-b-d-eNiaCrbLd Ale]{Ga3-cAlc}O12 with RE=La, Y, Yb, Nd, Ho, Er, Ce, Lu, Tm, Sc and L=Ti, Zr, Hf, Sn, Ge, Si and 0?u?2, 0<a?0.1, 0<b?0.3, 0<b?3, 0?c?0.15, 0?e?2. A light source comprises the first and second luminescent materials and one or more semiconductor light emitting diodes arranged to excite luminescence from the luminescent materials to provide short wavelength infrared emission over the range 1300-2000 nm.

Abstract: An amber emitting nitride ceramic phosphor may be directly sintered under pressure to improve the resulting compositional gradient. As a result mechanical thinning of the ceramic is less necessary. The ceramic also comes out more chemically stable, allowing for the example the application of a dichroic layer which can improve color point in the final light emitting device. The inventive process is cheaper than conventional production methods and may results in a phosphor with better quantum efficiency.

Abstract: An light emitting device, may include pump LEDs or lasers and one or more phosphors allowing the lamp to emit light with a spectral power distribution having a local minimum at a water vapor absorption band, such as at 950-990 nm. Such a device may be used in radiotherapy based on hyperthermia, providing light that penetrates tissue without risk of skin overheating. Utilizing LEDs or lasers may allow the light emitting device to achieve higher efficiency, better form factor, and lower operating temperatures than water-filtered halogen lamps utilized in radiotherapy.

Abstract: A wavelength converter material doped with one or more rare earth elements may provide improved temperature sensing precision and/or improved mechanical stability due to reduced structural anisotropy. The converter material may be powder phosphor or ceramic phosphor. The converter material may comprise GdAlO3:Cr in addition to the one or more rare earth elements.

Abstract: An LED device, particularly an LED lamp, includes pump LEDs and one or more phosphors allowing the lamp to emit both visible light and SWIR (short-wave infrared) useful in, for example, aviation safety. The emission spectrum of the phosphors provides SWIR light that has high transmission in air with a high water vapor concentration, making it suitable for use with SWIR cameras employed in aircraft. The layout of the LED device also delivers the sufficient visible flux required in aviation safety.

Abstract: A method of fabricating closely spaced pcLEDs (100) arranged in a matrix array (200) of perpendicular rows and columns comprises an initial phosphor deposition step in which phosphor (803, 905) is deposited at alternating locations (pixels) in the matrix array in a checkerboard pattern, so that the locations (504) in the array at which phosphor (803, 905) is deposited are not adjacent to each other. In a subsequent phosphor deposition step phosphor is deposited at the alternating locations at which phosphor was not deposited in the first deposition step. In between the two phosphor deposition steps, reflective or scattering structures (606) may be fabricated on sidewalls of the phosphor pixels to optically isolate pcLEDs in the resulting array from each other.

Abstract: A wavelength converting structure is disclosed, the wavelength converting structure including a spinel type SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including AE1-x-zAz+0.5(x-y)D2+0.5(x-y)-z-u EzO4:Niy,Cru where AE=Mg, Zn, Co, or Be, or mixtures thereof, A=Li, Na, Cu, or Ag, or mixtures thereof, D=Ga, Al, B, In, or Sc, or mixtures thereof, and E=Si, Ge, Sn, Ti, Zr, or Hf, or mixtures thereof; where 0?x?1, 0<y?0.1, 0?z?1, 0?u?0.2.

Abstract: A method of forming a nitridophosphate is disclosed, the method including forming a precursor mixture by combining a metal source material, a phosphorus source material, and a nitrogen source material, and heating the precursor mixture at a maximum temperature between 800° C. and 1300° C. in an atmosphere including nitrogen gas at a pressure between 2 MPa and 500 MPa.

Abstract: An inventive luminescent material suitable for use as a phosphor for an LED includes a nitridophosphate material having a general formula AEy-xLi10-2yP4N10:Eux, wherein (i) AE includes one or more of Ca, Sr, or Ba, and (ii) y?x>0. In some instances, y can equal 2 and x can be between 0 and 0.1. In some instances, AE can include only Ca; in some other instances, AE can include a majority amount of Ca and lesser amounts of Sr or Ba. In some instances, the luminescent material can exhibit a peak emission wavelength greater than 600 nm.

Abstract: A wavelength converting structure is provided, the wavelength converting structure including an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion. Also provided is a luminescent material having emission wavelength in the range of 1600-2200 nm, the luminescent material including (Gd3?u?v?x?y?zLuxTmyHozScvREu)[Sc2?a?bLuaCrbGadAle]{Ga3?cAlc}O12 with RE=La, Y, Yb, Nd, Er, Ce and 0?u?2, 0<v?1, 0<x?1, 0<y?0.5, 0?z?0.05, 0<a?1, 0<b?0.3, 0?c?3, 0<d?1.8, 0?e?1.8. An IR emitting device including the luminescent material may provide a broad-band emission in the wavelength range of 1600-2200 nm with a continuous emission spectrum over a spectral width of at least 500 nm.

Abstract: A compact LED package has a segmented semiconductor structure that may emit light and at least two wavelength converting structures absorbing the emitted light to emit their own light. One of the wavelength converting structures may emit infrared (IR) or near-infrared (NIR) light, e.g., for IR sensing functions, while the other may emit visible light. The wavelength converting structures may be ceramic platelets coupled to each other. The segments of the semiconductor structure may be individually addressable, and the segmented semiconductor structure may allow for a reduction of package size compared to conventional LED packages.

Abstract: A glucose measurement device comprising a light emitting device comprising an SWIR phosphor having emission wavelengths in the range of 1600-2200 nm, the SWIR phosphor comprising a structurally disordered garnet material, a sensitizer ion, and at least one rare earth emitter ion, and a infrared light detector arranged to detect the intensity of short wavelength infrared light emitted by the light emitting device and reflected by a sample. The emission spectra provided by the light emitting device having a high temperature stability at infrared absorption minima and maxima wavelengths of glucose in tissue.

Abstract: This specification discloses spinel-type phosphors that may be advantageously employed in light sources for medical optical coherence tomography (OCT), light sources for medical OCT comprising such phosphors, and OCT systems comprising such light sources.

Abstract: A family of optionally substituted oxonitridoberyllosilicate photoluminescent compositions (i.e., phosphors) is characterized by the formula AE1?x?y?uAy+uBe1?y?z?vBy+z+vSi1?z AlzO1?vN2+v: Eux,Ceu, where AE=Ba, Sr, Ca, Mg; A=Li, Na, K, Rb; 0?x?0.1; 0? u?0.1; 0<(x+u); 0?y?1; 0?z?1; (y+z+v)?1; and (x+y+u)?1. These phosphors may be used in phosphor converted LEDs which may be advantageously employed in illumination and display applications, for example.

Abstract: A phosphor layer includes phosphor particles and small typically non-luminescent particles, such as nanoparticles. The small particles improve adherence, coherence, and homogeneity of the phosphor layer by accumulating at contact points of the phosphor particles. Their diameter is smaller than those of the phosphor particles. The small particles may be co-deposited with the phosphor particles during electrophoretic deposition, increasing the formulation conductivity during deposition to increase transport speed. The small particles may be catalysts that aid in removal of organic material included in the electrophoretic deposition process.

Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: The invention provides a method for providing a luminescent particle with a hybrid coating, the method comprising: (i) providing a luminescent core comprising a primer layer on the luminescent core; (ii) providing a main ALD coating layer onto the primer layer by application of a main atomic layer deposition process, the main ALD coating layer comprising a multilayer with two or more layers having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer onto the main ALD-coating layer by application of a main sol-gel coating process, the main sol-gel coating layer having a chemical composition different from one or more of the layers of the multilayer.

Abstract: The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).