Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: Embodiments of the invention include an infrared-emitting phosphor comprising (La,Gd)3Ga5?x?yAlxSiO14:Cry, where 0?x?1 and 0.02?y?0.08. In some embodiments, the infrared-emitting phosphor is a calcium gallogermanate material. In some embodiments, the infrared-emitting phosphor is used with a second infrared-emitting phosphor. The second infrared-emitting phosphor is one or more chromium doped garnets of composition Gd3?x1Sc2?x2?yLux1+x2Ga3O12:Cry, where 0.02?x1?0.25, 0.05?x2?0.3 and 0.04?y?0.12.

Abstract: Embodiments of the invention include an infrared-emitting phosphor comprising (La,Gd)3Ga5?x?yAlxSiO14:Cry, where 0?x?1 and 0.02?y?0.08. In some embodiments, the infrared-emitting phosphor is a calcium gallogermanate material. In some embodiments, the infrared-emitting phosphor is used with a second infrared-emitting phosphor. The second infrared-emitting phosphor is one or more chromium doped garnets of composition Gd3?x1Sc2?x2?yLux1+x2Ga3O12:Cry, where 0.02?x1?0.25, 0.03?x2?0.3 and 0.04?y?0.12.

Abstract: Embodiments of the invention include a light source and a wavelength converting structure disposed in a path of light emitted by the light source. The wavelength converting structure includes a first phosphor that emits infrared light and a second phosphor that emits visible light. In some embodiments, the light source emits first light, the second phosphor absorbs the first light and emits second light, and the first phosphor absorbs the first light and emits third light and absorbs the second light and emits fourth light.

Abstract: The invention provides a lighting unit (100) comprising a light source (10), configured to generate light source light (11) and a luminescent material (20), configured to convert at least part of the light source light (11) into luminescent material light (51), wherein the luminescent material (20) comprises a phosphor (40), wherein this phosphor comprises an alkaline earth aluminum nitride based material having a cubic crystal structure with T5 supertetrahedra, wherein the T5 supertetrahedra comprise at least Al and N, and wherein the alkaline earth aluminum nitride based material further comprises a luminescent lanthanide incorporated therein.

Abstract: The invention provides, amongst others for application in a lighting unit, a phosphor selected from the class of M2D2C2-2bBbA2N6:Ln??(I) with M=selected from the group consisting of divalent Ca, Sr, and Ba; D=selected from the group consisting of monovalent Li, divalent Mg, Mn, Zn, Cd, and trivalent Al and Ga; C=selected from the group consisting of monovalent Li and Cu; B=selected from the group consisting of divalent Mg, Zn, Mn and Cd; A=selected from the group consisting of tetravalent Si, Ge, Ti, and Hf; Ln=selected from the group consisting of ES and RE; ES=selected from the group consisting of divalent Eu, Sm and Yb; RE=selected from the group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Tm; and 0?b?1.

Abstract: Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE1-xLi2Be4O6:Eux, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE1-xLi2Be4O6:Eux absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.

Abstract: Embodiments of the invention include a luminescent ceramic including (Ba1-xSrx)2-zSi5-yO4yN8-4y:Euz 258 phase wavelength converting material (0.5?x?0.9; 0?y?1; 0.001?z?0.02) and M3Si3O3N4 3334 phase material (M=Ba, Sr, Eu). The M3Si3O3N4 3334 phase material comprises no more than 5 weight % of the material.

Abstract: Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE1-xLi2Be4O6:Eux, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE1-xLi2Be4O6:Eux absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.

Abstract: Embodiments of the invention are directed to a luminescent ceramic including a first phase and a second phase. The first phase is R3?x?y?z+w2A1.5x+y?w2MzSi6?w1?w2Alw1?w2N11?y?w1Oy+w1. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm. The second phase may be or comprise, for example, RE3ASi5N9O2 and RESi3N5, wherein RE is at least one rare-earth element selected from the group consisting of La, Gd, Lu, Y, Ce and Sc and wherein A is at least one metal element selected from the group consisting of Ba, Sr, Ca, Mg, Zn and Eu.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: Embodiments of the invention include a light source and a nitridoberyllate phosphor disposed in a path of light emitted by the light source. The nitridoberyllate phosphor includes a trigonal planar BeN3 structure and/or a tetrahedral Be(N,O)4 structure.

Abstract: A wavelength converting layer is disclosed that includes a plurality of phosphor grains 50-500 nm in size and encapsulated in cerium free YAG shells and a binder material binding the plurality of phosphor grains, the wavelength converting layer having a thickness of 5-20 microns attached to the light emitting surface.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: Embodiments of the invention include a wavelength-converting composition as defined by R3?x?y?2Ax+yMzSi6?w1Alw1O3x+y+w1N11?7x/3?y?w1?2?2x/3, with ? being vacancies of the structure that are filled by oxygen atoms with 0<x?3, ?3?y<3, 0<z<1,0?w1?6, 0?x+y, x?y+z?3, 11?7/3x?y?w1?0, and 3x+y+w1?13. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm.

Abstract: The invention provides a lighting unit comprising a source of blue light, a source of green light, a first source of red light comprising a first red luminescent material, configured to provide red light with a broad band spectral light distribution, and a second source of red light comprising a second red luminescent material, configured to provide red light with a spectral light distribution comprising one or more red emission lines. Especially, the first red luminescent material comprises (Mg,Ca,Sr)AlSiN3:Eu and/or (Ba,Sr,Ca)2Si5-xAlxOxN8-x:Eu, and the second red luminescent material comprises K2SiF6:Mn.

Abstract: The invention provides a lighting unit comprising a light source, configured to generate light source light and a luminescent material, configured to convert at least part of the light source light into luminescent material light, wherein the light source comprises a light emitting diode (LED) and wherein the luminescent material comprises a phosphor comprising M2AX6 doped with tetravalent manganese, wherein M comprises monovalent cations, at least comprising potassium and rubidium, wherein A comprises a tetravalent cation, at least comprising silicon, wherein X comprises a monovalent anion, at least comprising fluorine, and wherein M2AX6 has the hexagonal phase.