Abstract: A luminescent material is disclosed with emission in the near infrared wavelength range, the luminescent material including Sc1-x-yAyRE:Crx, wherein MO=P3O9, BP3O12, SiP3O12; A=Lu, In, Yb, Tm, Y, Ga, Al, where 0?x?0.75, 0?y?0.9. A wavelength converting structure including the luminescent phosphor is also disclosed.

Abstract: An inorganic coating may be applied to bond optically scattering particles or components. Optically scattering particles bonded via the inorganic coating may form a three dimensional film which can receive a light emission, convert, and emit the light emission with one or more changed properties. The inorganic coating may be deposited using a low-pressure deposition technique such as an atomic layer deposition (ALD) technique. Two or more components, such as an LED and a ceramic phosphor layer may be bonded together by depositing an inorganic coating using the ALD technique.

Abstract: This specification discloses methods of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. In one embodiment the resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+y?zSizO4?4y?zN4y+z:Eux (AE=Ca, Sr, Ba, or a combination thereof, 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni2+, a perovskite type phosphor doped with Ni2+ and Cr3+, and a garnet type phosphor doped with Ni2+ and Cr3+.

Abstract: The invention provides luminescent material comprising E1-wSc1-x-y-u-wMyZuA2wSi2-z-uGezAluO6:Crx, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x?0.25; 0?y?0.75; 0?z?2; 0?u?1; 0?w?1; x+y+u+w?1; and z+u?2.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+2y?zSizO4?4y?zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: A method of fabricating closely spaced pcLEDs (100) arranged in a matrix array (200) of perpendicular rows and columns comprises an initial phosphor deposition step in which phosphor (803, 905) is deposited at alternating locations (pixels) in the matrix array in a checkerboard pattern, so that the locations (504) in the array at which phosphor (803, 905) is deposited are not adjacent to each other. In a subsequent phosphor deposition step phosphor is deposited at the alternating locations at which phosphor was not deposited in the first deposition step.

Abstract: The invention provides a method for providing a luminescent particle with a hybrid coating, the method comprising: (i) providing a luminescent core comprising a primer layer on the luminescent core; (ii) providing a main ALD coating layer onto the primer layer by application of a main atomic layer deposition process, the main ALD coating layer comprising a multilayer with two or more layers having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer onto the main ALD-coating layer by application of a main sol-gel coating process, the main sol-gel coating layer having a chemical composition different from one or more of the layers of the multilayer.

Abstract: Embodiments of the invention are directed to a luminescent ceramic including a first phase and a second phase. The first phase is R3?x?y?z+w2A1.5x+y?w2MzSi6?w1?w2Alw1?w2N11?y?w1Oy+w1. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm. The second phase may be or comprise, for example, RE3ASi5N9O2 and RESi3N5, wherein RE is at least one rare-earth element selected from the group consisting of La, Gd, Lu, Y, Ce and Sc and wherein A is at least one metal element selected from the group consisting of Ba, Sr, Ca, Mg, Zn and Eu.

Abstract: Embodiments of the invention include a transparent material such as glass including a metal such as bismuth, particles of luminescent material such as a nitride phosphor disposed in the transparent material, and a coating disposed over the particles of luminescent material. The coating is formed to prevent reaction between the particles of luminescent material and the metal. The coating may be silica.

Abstract: The invention provides a method for providing luminescent particles (100) with a hybrid coating, the method comprising (i) providing a first coating layer (110) onto the luminescent particles (100) by application of a sol-gel coating process, thereby providing coated luminescent particles; and (ii) providing a second coating layer (120) onto the coated luminescent particles by application of an atomic layer deposition process. The invention also provides luminescent particles (100) comprise a luminescent core (102), a first coating layer (110) having a first coating layer thickness (d1) in the range of 50-300 nm, and a second coating layer (120) having a second coating layer thickness (d2) in the range of 5-250 nm.

Abstract: The invention provides luminescent material comprising E1-wSc1-x-y-u-wMyZuA2wSi2-z-uGezAluO6:Crx, wherein: E comprises one or more of Li, Na, and K; M comprises one or more of Al, Ga, In, Tm, Yb, and Lu; Z comprises one or more of Ti, Zr, and Hf; A comprises one or more of Mg, Zn, and Ni; 0<x?0.25; 0?y?0.75; 0?z?2; 0?u?1; 0?w?1; x+y+u+w?1; and z+u?2.

Abstract: The invention provides a lighting device configured to provide white lighting device light, the lighting device comprising (i) a light source, configured to provide blue light source light, and (ii) a luminescent material element, configured to absorb at least part of the blue light source light and to convert into luminescent material light, wherein the luminescent material element comprises a luminescent material which consists for at least 80 wt. % of a M2-2xEu2xSi5-yAlyOyN8-y phosphor, wherein M comprises one or more of Mg, Ca, Sr, Ba, with a molar ratio of (Mg+Ca+Sr)/(Ba)?0.1, wherein x is in the range of 0.001-0.02, wherein y is in the range of ?0.2, and wherein the white lighting device light comprises said blue light source light and said luminescent material light.

Abstract: Embodiments of the invention include a wavelength-converting composition as defined by R3-x-y-zAx+yMzSi6-w1Alw1O3x+y+w1N11-7x/3-y-w1?2-2x/3, with ? being vacancies of the structure that are filled by oxygen atoms with 0<x?3, ?3?y<3, 0<z<1,0?w1?6, 0?x+y, x+y+z?3, 11?7/3x?y?w1?0, and 3x+y+w1?13. R is selected from the group comprising trivalent La, Gd, Tb, Y, Lu; A is selected from the group comprising bivalent Ca, Mg, Sr, Ba, and Eu; and M is selected from the group comprising trivalent Ce, Pr and Sm.

Abstract: This specification discloses a method of enhancing the stability and performance of Eu2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr4C4 crystal structure type and having a composition of AE1?xLi3?2yAl1+2y?zSizO4?4y?zN4y+z:EUx(AE=Ca, Sr, Ba; 0<x<0.04, 0?y<1, 0<z<0.05, y+z?1). It is believed that the formal substitution (Al,O)+ by (Si,N)+ reduces the concentration of unwanted Eu3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.

Abstract: Embodiments of the invention include a luminescent ceramic including (Ba1-xSrx)2-zSi5-yO4yN8-4y:Euz 258 phase wavelength converting material (0.5?x?0.9; 0?y?1; 0.001?z?0.02) and M3Si3O3N4 3334 phase material (M=Ba, Sr, Eu). The M3Si3O3N4 3334 phase material comprises no more than 5 weight % of the material.

Abstract: In a method according to embodiments of the invention, for a predetermined amount of light produced by a light emitting diode and converted by a phosphor layer comprising a host material and a dopant, and for a predetermined maximum reduction in efficiency of the phosphor at increasing excitation density, a maximum dopant concentration of the phosphor layer is selected.

Abstract: Embodiments of the invention include an infrared-emitting phosphor comprising (La,Gd)3Ga5-x-yAlxSiO14:Cry, where 0?x?1 and 0.02?y?0.08. In some embodiments, the infrared-emitting phosphor is a calcium gallogermanate material. In some embodiments, the infrared-emitting phosphor is used with a second infrared-emitting phosphor. The second infrared-emitting phosphor is one or more chromium doped garnets of composition Gd3-x1Sc2-x2-yLux1+x2Ga3O12:Cry, where 0.02?x1?0.25, 0.05?x2?0.3 and 0.04?y?0.12.