Patents by Inventor Peter L. Kellerman

Peter L. Kellerman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190338442
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Application
    Filed: July 16, 2019
    Publication date: November 7, 2019
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Patent number: 10468224
    Abstract: An apparatus may include an electrode assembly, the electrode assembly comprising a plurality of electrodes, arranged in a plurality of electrode pairs arranged to conduct an ion beam therethrough. A given electrode pair lies along a radius of an arc describing a nominal central ray trajectory, wherein a radius of a first electrode pair and an adjacent electrode pair define an angular spacing. The plurality of electrode pairs may define a plurality of angular spacings, wherein, in a first configuration, the plurality of angular spacings are not all equal. The apparatus may also include a power supply in communication with the EM, the power supply configured to independently supply voltage to the plurality of electrodes.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: November 5, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana Radovanov, Ana Samolov, Shengwu Chang, Frank Sinclair, Peter L. Kellerman
  • Publication number: 20190284715
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Application
    Filed: March 27, 2014
    Publication date: September 19, 2019
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Patent number: 10415151
    Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: September 17, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai
  • Publication number: 20190198283
    Abstract: An apparatus may include an electrode assembly, the electrode assembly comprising a plurality of electrodes, arranged in a plurality of electrode pairs arranged to conduct an ion beam therethrough. A given electrode pair lies along a radius of an arc describing a nominal central ray trajectory, wherein a radius of a first electrode pair and an adjacent electrode pair define an angular spacing. The plurality of electrode pairs may define a plurality of angular spacings, wherein, in a first configuration, the plurality of angular spacings are not all equal. The apparatus may also include a power supply in communication with the EM, the power supply configured to independently supply voltage to the plurality of electrodes.
    Type: Application
    Filed: April 9, 2018
    Publication date: June 27, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana Radovanov, Ana Samolov, Shengwu Chang, Frank Sinclair, Peter L. Kellerman
  • Patent number: 10179958
    Abstract: An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: January 15, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC
    Inventors: Peter L. Kellerman, Brian D. Kernan, Frederick M. Carlson, Dawei Sun, David Morrell
  • Patent number: 10030317
    Abstract: An apparatus may include a crucible configured to contain the melt, the melt having an exposed surface separated from a floor of the crucible by a first distance, a housing comprising a material that is non-contaminating to the melt, the housing comprising a plurality of sidewalls and a top that are configured to contact the melt, and a plurality of heating elements isolated from the melt and disposed along a transverse direction perpendicular to a pulling direction of the crystalline sheet, the plurality of heating elements being individually powered, wherein the plurality of heating elements are disposed at a second set of distances from the exposed surface of the melt that are less than the first distance, and wherein the plurality of heating elements are configured to vary a heat flux profile along the transverse direction when power is supplied individually to the plurality of heating elements.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: July 24, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Frederick M. Carlson, David Morrell, Brian Mackintosh, Nandish Desai
  • Publication number: 20180202066
    Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
    Type: Application
    Filed: March 16, 2018
    Publication date: July 19, 2018
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Brian H. Mackintosh, Peter L. Kellerman, Dawei Sun
  • Patent number: 9970125
    Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: May 15, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Brian H. Mackintosh, Peter L. Kellerman, Dawei Sun
  • Patent number: 9957636
    Abstract: A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: May 1, 2018
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Peter L. Kellerman, Brian Mackintosh, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai, Dawei Sun, Frank Sinclair
  • Publication number: 20180080142
    Abstract: An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. The first gas channel may be disposed closer to the downstream edge than the second gas channel. A first gas source may be coupled to the first gas channel, where the first gas source comprises helium or hydrogen, and a second gas source may be coupled to the second gas channel, where the second gas source does not contain hydrogen or helium.
    Type: Application
    Filed: March 10, 2017
    Publication date: March 22, 2018
    Inventors: Peter L. Kellerman, Brian D. Kernan, Frederick M. Carlson, Dawei Sun, David Morrell
  • Publication number: 20180047864
    Abstract: A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.
    Type: Application
    Filed: March 27, 2014
    Publication date: February 15, 2018
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Brian Mackintosh, Frederick M. Carlson, David Morrell, Ala Moradian, Nandish Desai, Dawei Sun, Frank Sinclair
  • Patent number: 9805931
    Abstract: Methods for processing of a workpiece are disclosed. A fluid that contains a desired dopant is prepared. The workpiece is immersed in this fluid, such that the dopant is able to contact all surfaces of the workpiece. The fluid is then evacuated, leaving behind the dopant on the workpiece. The dopant is then subjected to a thermal treatment to drive the dopant into the surfaces of the workpiece. In certain embodiments, a selective doping process may be performed by applying a mask to certain surfaces prior to immersing the workpiece in the fluid. In certain embodiments, the fluid may be in a super-critical state to maximize the contact between the dopant and the workpiece.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 31, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Jay T. Scheuer, William Davis Lee, Peter L. Kellerman
  • Publication number: 20170247810
    Abstract: A sheet-forming apparatus including a crucible for holding a melt of material and a solid sheet of the material disposed within the melt, a crystallizer disposed above the crucible and configured to form the sheet from the melt, and an ultrasonic measurement system disposed adjacent the crystallizer, the ultrasonic measurement system comprising at least one ultrasonic measurement device including a waveguide coupled to an ultrasonic transducer for directing an ultrasonic pulse through the melt.
    Type: Application
    Filed: October 16, 2015
    Publication date: August 31, 2017
    Inventors: Peter L. Kellerman, Ala Moradian, Frank Sinclair
  • Patent number: 9677193
    Abstract: In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: June 13, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Gregory D. Thronson, Dawei Sun
  • Patent number: 9587324
    Abstract: An apparatus for processing a melt may include a crucible configured to contain the melt, where the melt has an exposed surface that is separated from a floor of the crucible by a first distance. The apparatus may further include a submerged heater comprising a heating element and a shell disposed between the heating element and the melt, wherein the heating element does not contact the melt. The heating element may be disposed at a second distance with respect to the exposed surface of the melt that is less than the first distance.
    Type: Grant
    Filed: May 12, 2014
    Date of Patent: March 7, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frederick M. Carlson, Peter L. Kellerman, David Morrell, Brian Mackintosh, Nandish Desai
  • Publication number: 20170062221
    Abstract: Methods for processing of a workpiece are disclosed. A fluid that contains a desired dopant is prepared. The workpiece is immersed in this fluid, such that the dopant is able to contact all surfaces of the workpiece. The fluid is then evacuated, leaving behind the dopant on the workpiece. The dopant is then subjected to a thermal treatment to drive the dopant into the surfaces of the workpiece. In certain embodiments, a selective doping process may be performed by applying a mask to certain surfaces prior to immersing the workpiece in the fluid. In certain embodiments, the fluid may be in a super-critical state to maximize the contact between the dopant and the workpiece.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 2, 2017
    Inventors: Frank Sinclair, Jay T. Scheuer, William Davis Lee, Peter L. Kellerman
  • Publication number: 20170051430
    Abstract: An apparatus for drawing a crystalline sheet from a melt. The apparatus may include a crucible configured to contain the melt and having a dam structure, where the melt comprises an exposed surface having a level defined by a top of the dam structure. The apparatus may further include a support apparatus disposed within the crucible and having an upper surface, wherein the crystalline sheet is maintained flush with the exposed surface of the melt when drawn over the support apparatus, and may include a melt-back heater directing heat through the upper surface of the support apparatus to partially melt the crystalline sheet when the crystalline sheet is drawn over the support apparatus.
    Type: Application
    Filed: August 19, 2015
    Publication date: February 23, 2017
    Inventors: Dawei SUN, Peter L. KELLERMAN, Gregory Thronson
  • Patent number: 9574285
    Abstract: An apparatus to monitor thickness of a crystalline sheet grown from a melt. The apparatus may include a process chamber configured to house the melt and crystalline sheet; an x-ray source disposed on a first side of the crystalline sheet and configured to deliver a first beam of x-rays that penetrate the crystalline sheet from a first surface to a second surface opposite the first surface, at a first angle of incidence with respect to the first surface; and an x-ray detector disposed on the first side of the crystalline sheet and configured to intercept a second beam of x-rays that are generated by reflection of the first beam of x-rays from the crystalline sheet at an angle of reflection with respect to the first surface, wherein a sum of the angle of incidence and the angle of reflection satisfies the equation ?=2d sin ?.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: February 21, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Peter L. Kellerman
  • Patent number: 9567691
    Abstract: An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: February 14, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter L. Kellerman, Frank Sinclair, Frederick Carlson, Julian G. Blake