Patents by Inventor Peter L. Kellerman
Peter L. Kellerman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120168637Abstract: A method of controlling deflection of a charged particle beam in an electrostatic lens includes establishing a symmetrical electrostatic lens configuration comprising a plurality of electrodes disposed at unadjusted positions that are symmetric with respect to the central ray trajectory with applied unadjusted voltages that create fields symmetric with respect to the central ray trajectory. A symmetric electric field is calculated corresponding to the set of unadjusted voltages. A plurality of lower electrodes is arranged at adjusted positions that are asymmetric with respect to the central ray trajectory. A set of adjusted voltages is obtained for the plurality of lower electrodes, wherein the set of adjusted voltages corresponds to a set of respective potentials of the symmetric electric field at respective adjusted asymmetric positions. The adjusted voltages are applied to the asymmetric lens configuration when the charged particle beam passes therethrough.Type: ApplicationFiled: December 29, 2010Publication date: July 5, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Svetlana Radovanov, Peter L. Kellerman, Frank Sinclair, Robert C. Lindberg
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Patent number: 8129695Abstract: A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF.Type: GrantFiled: December 28, 2009Date of Patent: March 6, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Frank Sinclair, Victor Benveniste, Jun Lu
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Patent number: 8064071Abstract: A sheet measurement apparatus has a sheet disposed in a melt. The measurement system uses a beam to determine a dimension of the sheet. This dimension may be, for example, height or width. The beam may be, for example, collimated light, a laser, x-rays, or gamma rays. The production of the sheet may be altered based on the measurements.Type: GrantFiled: March 12, 2009Date of Patent: November 22, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher A. Rowland, Peter L. Kellerman, Frank Sinclair, Julian G. Blake, Nicholas P. T. Bateman
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Publication number: 20110271899Abstract: In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.Type: ApplicationFiled: March 1, 2011Publication date: November 10, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. Kellerman, Gregory D. Thronson, Dawei Sun
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Publication number: 20110271897Abstract: The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured to form a sheet of the material on the melt. A pump is used. In one instance, this pump includes a gas source and a conduit in fluid communication with the gas source. In another instance, this pump injects a gas into a melt. The gas can raise the melt or provide momentum to the melt.Type: ApplicationFiled: March 3, 2011Publication date: November 10, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. Kellerman, Frederick Carlson
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Publication number: 20110272115Abstract: Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.Type: ApplicationFiled: March 3, 2011Publication date: November 10, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. Kellerman, Dawei Sun, Brian Helenbrook, David S. Harvey
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Publication number: 20110271901Abstract: A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.Type: ApplicationFiled: July 20, 2011Publication date: November 10, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. Kellerman, Frederick Carlson, Frank Sinclair
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Patent number: 7998224Abstract: A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.Type: GrantFiled: October 16, 2009Date of Patent: August 16, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Frederick Carlson, Frank Sinclair
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Publication number: 20110155921Abstract: A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF.Type: ApplicationFiled: December 28, 2009Publication date: June 30, 2011Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Frank Sinclair, Victor Benveniste, Jun Lu
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Publication number: 20110117234Abstract: This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.Type: ApplicationFiled: November 17, 2010Publication date: May 19, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. Kellerman, Frank Sinclair
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Patent number: 7888653Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.Type: GrantFiled: January 2, 2009Date of Patent: February 15, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Svetlana Radovanov, Frank Sinclair, Victor M. Benveniste
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Publication number: 20110003024Abstract: A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate.Type: ApplicationFiled: September 8, 2010Publication date: January 6, 2011Applicant: VERIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. KELLERMAN, Frank Sinclair, Frederick Carlson
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Patent number: 7855087Abstract: This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.Type: GrantFiled: March 12, 2009Date of Patent: December 21, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Frank Sinclair
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Patent number: 7816153Abstract: A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate.Type: GrantFiled: June 4, 2009Date of Patent: October 19, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Frank Sinclair, Frederick Carlson, Nicholas P. T. Bateman, Robert J. Mitchell
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Patent number: 7800082Abstract: An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.Type: GrantFiled: February 15, 2006Date of Patent: September 21, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. Kellerman, Keneth H. Purser
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Publication number: 20100221142Abstract: A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.Type: ApplicationFiled: October 16, 2009Publication date: September 2, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. KELLERMAN, Frederick Carlson, Frank Sinclair
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Publication number: 20100171042Abstract: Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.Type: ApplicationFiled: January 2, 2009Publication date: July 8, 2010Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Peter L. KELLERMAN, Svetlana Radovanov, Frank Sinclair, Victor M. Benveniste
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Patent number: 7748344Abstract: An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.Type: GrantFiled: November 6, 2003Date of Patent: July 6, 2010Assignee: Axcelis Technologies, Inc.Inventors: William F. DiVergilio, Victor M. Benveniste, Peter L. Kellerman
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Patent number: 7675047Abstract: A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.Type: GrantFiled: September 29, 2006Date of Patent: March 9, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Svetlana B. Radovanov, Peter L. Kellerman, Victor M. Benveniste, Robert C. Lindberg, Kenneth H. Purser, Tyler B. Rockwell, James S. Buff, Anthony Renau
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Publication number: 20100050686Abstract: An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.Type: ApplicationFiled: June 18, 2009Publication date: March 4, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Peter L. Kellerman, Frank Sinclair, Frederick Carlson, Julian G. Blake