Abstract: Test circuit for testing a synchronous memory circuit having a frequency multiplication circuit which multiplies a clock frequency of a low-frequency clock signal received from an external test unit by a particular frequency multiplication factor a test data generator which produces test data on the basis of data control signals received from the external test unit and outputs them to a data output driver a first signal delay circuit for delaying the test data which are output by the test data generator by an adjustable first delay time, a second signal delay circuit for delaying data which are read out of the synchronous memory circuit and are received by a data input driver in the test circuit by an adjustable second delay time, and having a data comparison circuit which compares the test data produced by the test data generator with the data read out of the memory circuit and, on the basis of the comparison result, outputs an indicator signal to the external test unit which indicates whether the synchronou

Abstract: The method and the device generate digital signal patterns. Signal patterns or signal pattern groups are stored in a very small buffer register. The position of a following signal pattern or following signal pattern group is also stored in the form of a branch address, together with each signal pattern or each signal pattern group. A simple control logic circuit receives a control signal and determines whether the content of the currently addressed group is output continuously or the following group given by the branch address stored in the register is output after the currently selected group has been completely output. The novel method and device can advantageously be used for testing semiconductor memories and implemented in a cost-effective semiconductor circuit which is remote from a conventional test system.

Abstract: In a memory circuit integrated on a semiconductor chip, an interface system is formed between the connection pads and associated internal signal lines and contains a respective separate and complete interface circuit for each of at least two different modes of operation of the memory circuit. Each interface circuit is arranged distributed over a plurality of spaced sections of the chip surface such that sections of different interface circuits alternate with one another. Only the interface circuit which is associated with the mode of operation which is desired when the memory circuit is being used is operatively connected between the connection pads and the associated internal signal lines by metallizations in the topmost metallization plane.

Abstract: The invention relates to an integrated memory circuit having a memory cell array comprising memory cells arranged on word lines and bit lines, and having a repair circuit for repairing a single bit error in one of the memory cells, the repair circuit comprising: an error memory for storing an item of repair information, an assignment unit in order, when accessing an address of the memory cell array, depending on the repair information, to access either a memory area of the memory cell array or a redundancy memory area, and a test unit for determining the repair information.

Abstract: One embodiment of the present invention relates to a memory device in a package comprising a plurality of data output ports, a plurality of internal data lines for providing data to and from a memory unit, a switching unit which is operable, depending on an operational mode, either to connect a first number of the internal data lines to a first number of the plurality of data output ports in a first operational mode or to connect a second number of the internal data lines to a second number of the plurality data output ports in a second operational mode, wherein the first number is smaller than the second number; and a mode selector unit which is connected to the switching unit to set the operational mode of the switching unit, wherein the mode selector unit includes a programmable storage unit for writing mode data from externally and wherein the operational mode is determined depending on the mode data.

Abstract: The invention relates to a hub module for connecting one or more memory chips, said module having an address input for connection to an address bus in order to receive an address of the memory area to be addressed and having an address output for connection to a further address bus, and having an address decoder unit in order to address one of the connected memory chips using an address that is applied to the address input or to apply the applied address to the address output, characterized in that the address decoder unit has a redundancy unit in order to address a redundant memory area instead of the addressed memory area in the event of a defect being detected in a memory area of the one or more connected memory chips.

Abstract: The invention relates to a hub chip for connecting one or more memory chips via a respective memory chip interface, having an address input for connecting the hub chip to an address bus and having an address output for connection to a further address bus, having an address decoder unit configured to use an address applied to the address input to address one of the connected memory chips or to apply the applied address to the address output, characterized by an error recognition unit configured to use provided checking data to detect an error in a memory area of the one or more memory chips.

Abstract: A memory component comprises a plurality of memory cells that are each assigned an address, and an address memory for storing numerical values which are uniquely related to addresses of defective memory cells. An address converter having an input for receiving a first address and an output for outputting a second address is designed in such a way that the second address output at its output is dependent on the first address received at its input and on the numerical values stored in the address memory, each first address being uniquely assigned a second address. An address bus, which is connected to the output of the address converter, transfers the second address to an input of an address decoder, which is designed for selecting a memory cell to which the second address is assigned.

Abstract: Apparatuses and methods for transmitting and receiving a data signal on a line pair having a first transmission line and a second transmission line are provided. In one embodiment, a data signal which represents the data to be transmitted by means of a sequence of first and second signal levels is applied to the first transmission line, and a reference signal which changes between a first and a second reference level only when a level change between the first and the second signal level is suppressed between two successive signal levels of the data signal on the first transmission line is applied to the second transmission line.

Abstract: In a method for repairing a memory component, data retention times of regular memory cells are determined. Weak regular memory cells having a data retention time that is shorter than a predetermined limit value are determined. A device is programmed in such a manner that a write or read access to the weak regular memory cell is simultaneously also effected for a redundant memory cell in order to jointly read from, or write to, the weak regular memory cell and the redundant memory cell.

Abstract: An encoder for encoding a data word with a plurality of bits, wherein the data word is transmittable in parallel on a data bus, wherein one bit line is provided for each bit and wherein each bit may have one of two logical states, including a means for examining the data word in order to determine whether a first number of bits of the data word with a first logical state deviates from a second number of bits of the data word with a second logical state by more than a predetermined threshold, a means for changing the state of a bit of the data word in order to create an encoded data word in case the predetermined threshold is exceeded by the data word, and a means for detecting auxiliary information referring to the changed bit.

Abstract: A system and a method for testing fast synchronous digital circuit with an additional built outside self test semiconductor chip disposed between a test device and circuit under test. The chip has a switching/detection unit that tests the chip based on external criteria between a first normal operating mode in which the chip tests the circuit to be tested, and a second operating mode in which programmable registers of the register unit of a receiver of the chip are programmed by the external test device. The registers store constants and variables for generating the test signals and for evaluating them. The chip generates test signals and transceiver for sending the test signals and receiving response signals generated thereby.

Abstract: Spare transistors are formed in regions of a semiconductor device where functional transistors are not formed, providing uniformity in etch and polishing processes, and resulting in transistors with more uniform parameters on the semiconductor device. The spare transistors may not be electrically connected to other components on the device, or alternatively, the spare transistors may be connected to other components for use as spare transistors, for example. The gates of the spare transistors provide a homogeneous gate material layer, resulting in improved etch, polishing, and lithography processes for the semiconductor device.

Abstract: A circuit comprises an output terminal, an output driver for providing an output signal at the output terminal, a switching device for producing one or more connections of the output terminal to a respective fixed or variable potential, and a control device for controlling the switching device, the control device being designed to produce the connection or the connections in the event of a transition in the output signal from a first logic level to a second logic level and to disconnect it at the latest when the output signal attains the second level.

Abstract: A semiconductor device with a test circuit disconnected from a power supply connection to reduce leakage current, and a method of manufacture thereof. The test circuit may be used to test functional circuits on the semiconductor device, and after the tests are completed, the test circuit is disconnected from the power supply connection. The test circuit is powered by contacting a test pad with a probe that supplies power to the test circuit, in one embodiment. In another embodiment, the test circuit is disconnected from the power supply using a laser to blow a fuse in the path of the power supply connection for the test circuit. Optional features include a bleeder device coupled to the power supply input of the test circuit, and logic circuitry for setting the outputs of the test circuit to a predetermined state coupled to the outputs of the test circuit.

Abstract: The invention relates to a memory module for providing a storage capacity, comprising a printed circuit board, one or more memory components which are applied to the printed circuit board and which in each case have a regular memory area and a redundant memory area, a connecting interface for connecting the memory module to an overall system and for receiving a specific address datum, a programmable fuse element, which is applied separately on the printed circuit board and which has a programming state dependent on a programming step, and a redundancy circuit, which is connected to the fuse element and to the one or more memory components in such a way as to address the regular memory area or the redundant memory area in one of the memory components in a manner dependent on the programming state of the fuse element in the case where the specific address datum is present.

Abstract: The invention relates to a memory module having a printed circuit board; having one or more memory chips which are arranged in a first region of the printed circuit board and are contact-connected by the printed circuit board; having a buffer chip for driving the memory chips and for communicating with a system that is external to the memory module, the buffer chip being arranged in a second region of the printed circuit board and being contact-connected by the printed circuit board; wherein the first and second regions of the printed circuit board are essentially thermally decoupled from one another.

Abstract: The invention relates to a memory circuit comprising regular memory areas and redundant memory areas, redundancy circuits in each case being assigned to the redundant memory areas, each redundancy circuit having permanently settable storage elements in order, in a first setting state, to address the assigned redundant memory area in the event of addressing of the regular memory area with a memory address determined by the first setting state, each redundancy circuit, in a second setting state, addressing the assigned redundant memory area in a manner dependent on an activation signal.

Abstract: As disclosed herein, a method and apparatus are provided for amplifying a signal by a transistor of an array of transistors that includes a storage cell transistor array of a dynamic random access memory (DRAM). According to the disclosed method, an array of transistors is provided including transistors of a storage cell transistor array of a dynamic random access memory array. A transistor of the array of transistors has a source or a drain coupled to a fixed potential. An input signal is applied to a gate of the transistor, whereby the transistor amplifies the input signal to provide an output signal appearing on the other of the source or drain of the transistor.

Abstract: A memory cell arrangement having at least one first and one second memory cell, which respectively have a storage capacitor and a selection transistor, is formed in such a manner that the components in the first memory cell and the components in the second memory cell are arranged in such a manner that they are at least partially nested inside one another in the semiconductor substrate.