Abstract: An LED light source for use in LED lighting fixtures, the LED light source comprising a submount including an LED-populated area which has an aspect ratio greater than 1, an array of LEDs on the LED-populated area, and a lens on the submount over the LED-populated area. Various embodiments facilitating preferential-side lighting, such as for roadway uses, are also disclosed.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Lighting apparatus having a first lens over the LED emitter and a second lens over the first lens, and including: a first optical surface which is a first-lens outer surface configured to refract light from the emitter; a second optical surface which is a second-lens inner surface spaced from the first optical surface; and a third optical surface which is a second-lens outer surface configured to refract light from the second optical surface toward a preferential side. One embodiment includes asymmetric primary and secondary lenses.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds.

Abstract: Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.

Abstract: Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion.

Abstract: Multiple configuration light emitting diode (LED) devices and methods are disclosed wherein LEDs within the device can be selectively configured for use in higher voltage, or variable voltage, applications. Variable arrangements of LEDs can be configured. Arrangements can include one or more LEDs connected in series, parallel, and/or a combination thereof. A surface over which one or more LEDs may be mounted can comprise one or more electrically and/or thermally isolated portions.

Abstract: An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.

Abstract: A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a chip disposed on the substrate is positioned within an opening in the stencil. Phosphor-containing material is deposited in the opening to form a coating on one or more light emitting surfaces of the chip. The opening may or may not substantially conform to a shape of the chip. The phosphor-containing material is cured with the stencil still in place. After curing, the stencil is removed from the substrate and the coated chip is separated from the substrate. The chip may then be subjected to further processing.

Abstract: A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant region of the upper surface of the substrate, and a second meniscus control feature on the substrate surrounding the first encapsulant region and defining a second encapsulant region of the upper surface of the substrate. The first and second meniscus control features may be substantially coplanar with the die attach pad. A packaged LED includes a submount as described above and further includes an LED chip on the die attach pad, a first encapsulant on the substrate within the first encapsulant region, and a second encapsulant on the substrate within the second encapsulant region and covering the first encapsulant. Method embodiments are also disclosed.

Abstract: A packaged electronic device includes a submount, a bonding pattern on the submount, and an electronic chip on the bonding pattern. A periphery of the electronic chip defines a die mounting region of the submount. The bonding pattern includes a bonding area within the die mounting region and at least one channel that extends from within the die mounting region to a region of the submount outside the die mounting region.

Abstract: Solid state light emitting diode packages can be provided including a ceramic material and a leadframe structure, on the ceramic material, the leadframe structure including a portion thereof that integrates the leadframe structure with the ceramic material.

Abstract: Provided are apparatus and methods corresponding to a solid state light emitting element. Such methods include mounting, to a thermally conductive component, a solid state light emitting element that includes first and second electrical connection points that are configured to be conductively engaged on a first side of a circuit structure. The solid state light emitting element is electrically insulated from the thermally conductive component to provide that electrical connections are arranged on the first side of the circuit structure and heat is conducted to a second side of the circuit structure that is opposite the first side of the circuit structure.

Abstract: A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.

Abstract: A submount for an electronic device includes an electrically insulating substrate including first and second surfaces and having a thickness between the first and second surfaces, a thermally conductive pad on the first surface of the substrate, and a thermally conductive via extending from the first surface of the substrate toward the second surface of the substrate and having a length that is less than the thickness of the substrate. The thermally conductive via has a higher thermal conductivity than a thermal conductivity of the substrate. Methods of forming submounts are also disclosed.

Abstract: Methods of forming a light emitting device package assembly include defining a chromaticity region in a two dimensional chromaticity space within a 10-step MacAdam ellipse of a target chromaticity point, and subdividing the defined chromaticity region into at least three chromaticity subregions, providing a plurality of light emitting devices that emit light having a chromaticity that falls within the defined chromaticity region, selecting at least three of the plurality of light emitting devices, wherein each of the three light emitting devices emits light from a different one of the chromaticity subregions. The at least three light emitting devices are selected from chromaticity subregions that are complementary relative to the target chromaticity point to at least one other chromaticity subregion from which a light emitting device is selected.

Abstract: A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.