Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In an embodiment a method includes providing a plurality of optoelectronic semiconductor components on a first carrier, providing a second carrier comprising a contact structure with a plurality of periodically arranged contact surfaces on its top surface, accommodating the plurality of optoelectronic semiconductor components by a transfer unit including placing the transfer unit on a top surface of the optoelectronic semiconductor components opposite to the first carrier, lifting the plurality of optoelectronic semiconductor components from the first carrier, placing a first subset of the plurality of optoelectronic semiconductor components on a first subset of the plurality of periodically arranged contact surfaces and fixing the first subset of the plurality of optoelectronic semiconductor components on the first subset of the plurality of periodically arranged contact surfaces.

Abstract: In an embodiment a light emitting device includes a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and the second layer, a first electric contact connected to an electric contact via, the electric contact via extending electrically isolated through the second layer and the active region and contacting the first layer and a second electric contact contacting the second layer, wherein the first electric contact and the second electric contact are arranged on the second layer on a bottom surface of the semiconductor layer stack, and wherein an interface between a top surface of the semiconductor layer stack and a medium above the top surface is roughened in an area smaller than an area of the top surface.

Abstract: In an embodiment an optoelectronic component includes a carrier, a first semiconductor layer sequence with a first layer having a doped semiconductor material, and a second layer, and a second semiconductor layer sequence disposed atop the second layer and having an active zone configured to generate light, wherein the first layer includes at least a first region having a porosity level which is at least 20% greater than a porosity level of a second region, and a trench separating the first region from the second region, and wherein the carrier is bonded either to the first layer or to a side of the second semiconductor layer sequence remote from the first semiconductor layer sequence.

Abstract: In an embodiment a method for producing a semiconductor body includes providing an auxiliary carrier, depositing a layer sequence on the auxiliary carrier having a first layer including a doped semiconductor material and a second layer including an undoped semiconductor material on the first layer, performing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming a functional semiconductor body on the second layer and detaching the semiconductor body from the auxiliary carrier.

Abstract: In an embodiment a method for manufacturing a semiconductor body includes providing an subcarrier, generating a layer sequence with a first layer having a doped semiconductor material and a second layer deposited thereon, the second layer having an undoped semiconductor material, providing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming mesa structures in the second layer and at least partially in the porous first layer and epitaxially producing a functional layer sequence having at least one planar third layer which is applied to the second layer comprising the mesa structures, wherein the at least one planar third layer has a specific lattice constant which is different from a lattice constant of the second layer.

Abstract: The invention relates to a radiation-emitting semiconductor component comprising a semiconductor body which has an active zone for generating radiation and a radiation exit surface, a contact element which is arranged on the radiation exit surface at a first lateral distance from a first edge piece of the radiation exit surface and at a second lateral distance from a second edge piece of the radiation exit surface, and a decoupling structure for improving the decoupling of the radiation generated by the active zone, which decoupling structure is arranged on the radiation exit surface and has structural elements, wherein the structural elements vary in such a way that the radiation decoupling increases from the contact element to the first and/or second edge piece. Furthermore, a method is specified for producing a such a radiation-emitting semiconductor element.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.