Patents by Inventor Peter Stauss

Peter Stauss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170040165
    Abstract: What is specified is a method for producing a layer structure (10) as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (1), which has a silicon surface (1a), b) deposition of a first layer sequence (2), which comprises a seeding layer (21) containing aluminium and nitrogen, on the silicon surface (1a) of the carrier (1) along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (1), c) three-dimensional growth of a 3D-GaN layer (3), which is formed with gallium nitride, on a top surface (2a) of the first layer sequence (2) which is remote from the silicon surface (1a), d) two-dimensional growth of a 2D-GaN layer (4), which is formed with gallium nitride, on the outer surfaces (3a) of the 3D-GaN layer (3) which are remote from the silicon surface (1a).
    Type: Application
    Filed: April 13, 2015
    Publication date: February 9, 2017
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Philipp DRECHSEL, Werner BERGBAUER, Juergen OFF, Peter STAUSS
  • Publication number: 20160303724
    Abstract: A setting device is provided, comprising a housing, a combustion chamber having an ignition apparatus, a storage container having a container wall for storing fuel, a dosing apparatus for adding a specified volume of fuel to the combustion chamber, an apparatus, such as a firing pin, for inserting a setting element into a setting object, wherein a setting force can be applied to the apparatus as a result of the pressure of combustion gas such that the apparatus is operable by combustion force, a control unit, and a temperature sensor for detecting the temperature of the fuel in the storage container. The setting device is designed such that, while the storage container is connected to the setting device, the temperature sensor mechanically contacts an outer surface of the container wall, for indirect detection of the temperature of the fuel.
    Type: Application
    Filed: November 25, 2014
    Publication date: October 20, 2016
    Inventors: Tilo Dittrich, Norbert Heeb, Peter Stauss-Reiner
  • Publication number: 20160093765
    Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0?x?1, 0?y?1 and x+y?1, is grown on onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.
    Type: Application
    Filed: May 28, 2014
    Publication date: March 31, 2016
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
  • Publication number: 20150364641
    Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.
    Type: Application
    Filed: January 28, 2014
    Publication date: December 17, 2015
    Inventors: Werner Bergbauer, Philipp Drechsel, Peter Stauß, Patrick Rode
  • Patent number: 9184051
    Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: November 10, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Stauss, Philipp Drechsel
  • Patent number: 9184337
    Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: November 10, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Stauss, Philipp Drechsel
  • Publication number: 20150228858
    Abstract: An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.
    Type: Application
    Filed: September 25, 2013
    Publication date: August 13, 2015
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
  • Publication number: 20140342484
    Abstract: A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer.
    Type: Application
    Filed: August 28, 2012
    Publication date: November 20, 2014
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar, Peter Stauss
  • Publication number: 20140329350
    Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.
    Type: Application
    Filed: July 18, 2014
    Publication date: November 6, 2014
    Inventors: Peter Stauss, Philipp Drechsel
  • Publication number: 20140302665
    Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.
    Type: Application
    Filed: September 21, 2012
    Publication date: October 9, 2014
    Inventors: Peter Stauss, Philipp Drechsel
  • Patent number: 8851352
    Abstract: A setting tool for driving a fastening element in a constructional component includes a housing (11), a drive member (13) displaceable in a guide (12) located in the housing, a bolt guide (15) adjoining the drive member guide (12) in direction of the operational axis (A) and forming a dog point (16) for abutting the constructional component and a drive-in depth setting tool (20) for displacing the bolt guide (15) axially relative to the drive member guide (15) for setting a distance between a drive end (14) of the drive member (13) and the dog point (16) in the initial position of the drive member.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: October 7, 2014
    Assignee: Hilti Aktiengesellschaft
    Inventors: Rolf Erhardt, Peter Stauss, Dierk Tille
  • Publication number: 20130328101
    Abstract: A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.
    Type: Application
    Filed: October 21, 2011
    Publication date: December 12, 2013
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Stauss, Alexander Behres
  • Publication number: 20130214285
    Abstract: A semiconductor component has a semiconductor layer sequence made of a nitridic composite semiconductor material on a substrate. The substrate includes a silicon surface facing the semiconductor layer sequence. The semiconductor layer sequence includes an active region and at least one intermediate layer made of an oxygen-doped AN composite semiconductor material between the substrate and the active region.
    Type: Application
    Filed: August 11, 2011
    Publication date: August 22, 2013
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Peter Stauss, Joachim Hertkorn, Philipp Drechsel
  • Publication number: 20130200432
    Abstract: A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.
    Type: Application
    Filed: July 7, 2011
    Publication date: August 8, 2013
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Stauß, Patrick Rode, Philipp Drechsel
  • Patent number: 8410507
    Abstract: A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: April 2, 2013
    Assignee: OSRAM Opto SEmiconductors GmbH
    Inventors: Peter Stauss, Reiner Windisch, Frank Baumann, Matthias Peter
  • Publication number: 20130065342
    Abstract: A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.
    Type: Application
    Filed: September 28, 2010
    Publication date: March 14, 2013
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Peter Stauss, Philipp Drechsel
  • Patent number: 8274657
    Abstract: A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: September 25, 2012
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Arndt Jaeger, Peter Stauss, Klaus Streubel, Werner Kuhlmann
  • Publication number: 20120132689
    Abstract: The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank (5), wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2) wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber (2), and wherein the metering device (4) comprises a movable displacement member (16) for ejecting the fuel out of the metering space (12), wherein the movement of the displacement member (16) is supplied by the pressure of the fuel as the energy source.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 31, 2012
    Applicant: HILTI AKTIENGESELLSCHAFT
    Inventors: Tilo Dittrich, Thomas Sperrfechter, Heeb Norbert, Peter Stauss
  • Publication number: 20120132687
    Abstract: The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank, wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2), wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber, wherein the metering device (4) comprises an electric stepper motor (15) by means of which the defined amount can be varied as a function of a temperature.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 31, 2012
    Applicant: Hilti Aktiengesellschaft
    Inventors: Tilo Dittrich, Heeb Norbert, Peter Stauss, Simon Beauvais
  • Patent number: 8173991
    Abstract: An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: May 8, 2012
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Peter Stauss, Matthias Peter, Alexander Walter