Patents by Inventor Peter Stauss
Peter Stauss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170040165Abstract: What is specified is a method for producing a layer structure (10) as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (1), which has a silicon surface (1a), b) deposition of a first layer sequence (2), which comprises a seeding layer (21) containing aluminium and nitrogen, on the silicon surface (1a) of the carrier (1) along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (1), c) three-dimensional growth of a 3D-GaN layer (3), which is formed with gallium nitride, on a top surface (2a) of the first layer sequence (2) which is remote from the silicon surface (1a), d) two-dimensional growth of a 2D-GaN layer (4), which is formed with gallium nitride, on the outer surfaces (3a) of the 3D-GaN layer (3) which are remote from the silicon surface (1a).Type: ApplicationFiled: April 13, 2015Publication date: February 9, 2017Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Philipp DRECHSEL, Werner BERGBAUER, Juergen OFF, Peter STAUSS
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Publication number: 20160303724Abstract: A setting device is provided, comprising a housing, a combustion chamber having an ignition apparatus, a storage container having a container wall for storing fuel, a dosing apparatus for adding a specified volume of fuel to the combustion chamber, an apparatus, such as a firing pin, for inserting a setting element into a setting object, wherein a setting force can be applied to the apparatus as a result of the pressure of combustion gas such that the apparatus is operable by combustion force, a control unit, and a temperature sensor for detecting the temperature of the fuel in the storage container. The setting device is designed such that, while the storage container is connected to the setting device, the temperature sensor mechanically contacts an outer surface of the container wall, for indirect detection of the temperature of the fuel.Type: ApplicationFiled: November 25, 2014Publication date: October 20, 2016Inventors: Tilo Dittrich, Norbert Heeb, Peter Stauss-Reiner
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Publication number: 20160093765Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0?x?1, 0?y?1 and x+y?1, is grown on onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.Type: ApplicationFiled: May 28, 2014Publication date: March 31, 2016Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
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Publication number: 20150364641Abstract: A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.Type: ApplicationFiled: January 28, 2014Publication date: December 17, 2015Inventors: Werner Bergbauer, Philipp Drechsel, Peter Stauß, Patrick Rode
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Patent number: 9184051Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminum-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.Type: GrantFiled: September 21, 2012Date of Patent: November 10, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauss, Philipp Drechsel
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Patent number: 9184337Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: GrantFiled: July 18, 2014Date of Patent: November 10, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauss, Philipp Drechsel
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Publication number: 20150228858Abstract: An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.Type: ApplicationFiled: September 25, 2013Publication date: August 13, 2015Applicant: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
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Publication number: 20140342484Abstract: A method of producing a semiconductor chip includes providing a silicon growth substrate, producing a III nitride buffer layer on the growth substrate by sputtering, and growing a III nitride semiconductor layer sequence having an active layer above the buffer layer.Type: ApplicationFiled: August 28, 2012Publication date: November 20, 2014Applicant: OSRAM Opto Semiconductors GmbHInventors: Joachim Hertkorn, Karl Engl, Berthold Hahn, Andreas Weimar, Peter Stauss
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Publication number: 20140329350Abstract: A method is provided for producing a light-emitting diode. In one embodiment, a series of layers is deposited on the silicon surface of a carrier in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: ApplicationFiled: July 18, 2014Publication date: November 6, 2014Inventors: Peter Stauss, Philipp Drechsel
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Publication number: 20140302665Abstract: A method of producing a nitride compound semiconductor component includes providing a growth substrate having a silicon surface, growing a buffer layer containing an aluminium-containing nitride compound semiconductor onto the silicon surface, growing a stress layer structure that produces a compressive stress, and growing a functional semiconductor layer sequence onto the stress layer structure, wherein the stress layer structure includes a first GaN semiconductor layer and a second GaN semiconductor layer, a masking layer is embedded in the first GaN semiconductor layer, an Al(Ga)N-intermediate layer that produces a compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer, and the stress layer structure does not contain further Al(Ga)N-intermediate layers.Type: ApplicationFiled: September 21, 2012Publication date: October 9, 2014Inventors: Peter Stauss, Philipp Drechsel
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Patent number: 8851352Abstract: A setting tool for driving a fastening element in a constructional component includes a housing (11), a drive member (13) displaceable in a guide (12) located in the housing, a bolt guide (15) adjoining the drive member guide (12) in direction of the operational axis (A) and forming a dog point (16) for abutting the constructional component and a drive-in depth setting tool (20) for displacing the bolt guide (15) axially relative to the drive member guide (15) for setting a distance between a drive end (14) of the drive member (13) and the dog point (16) in the initial position of the drive member.Type: GrantFiled: January 19, 2007Date of Patent: October 7, 2014Assignee: Hilti AktiengesellschaftInventors: Rolf Erhardt, Peter Stauss, Dierk Tille
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Publication number: 20130328101Abstract: A method of producing an optoelectronic semiconductor chip having a semiconductor layer stack based on a material system AlInGaP includes preparing a growth substrate having a silicon surface, arranging a compressively relaxed buffer layer stack on the growth substrate, and metamorphically, epitaxially growing the semiconductor layer stack on the buffer layer stack, the semiconductor layer stack having an active layer that generates radiation.Type: ApplicationFiled: October 21, 2011Publication date: December 12, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Peter Stauss, Alexander Behres
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Publication number: 20130214285Abstract: A semiconductor component has a semiconductor layer sequence made of a nitridic composite semiconductor material on a substrate. The substrate includes a silicon surface facing the semiconductor layer sequence. The semiconductor layer sequence includes an active region and at least one intermediate layer made of an oxygen-doped AN composite semiconductor material between the substrate and the active region.Type: ApplicationFiled: August 11, 2011Publication date: August 22, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Peter Stauss, Joachim Hertkorn, Philipp Drechsel
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Publication number: 20130200432Abstract: A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.Type: ApplicationFiled: July 7, 2011Publication date: August 8, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Peter Stauß, Patrick Rode, Philipp Drechsel
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Patent number: 8410507Abstract: A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.Type: GrantFiled: August 11, 2009Date of Patent: April 2, 2013Assignee: OSRAM Opto SEmiconductors GmbHInventors: Peter Stauss, Reiner Windisch, Frank Baumann, Matthias Peter
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Publication number: 20130065342Abstract: A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.Type: ApplicationFiled: September 28, 2010Publication date: March 14, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Peter Stauss, Philipp Drechsel
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Patent number: 8274657Abstract: A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.Type: GrantFiled: November 29, 2007Date of Patent: September 25, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Arndt Jaeger, Peter Stauss, Klaus Streubel, Werner Kuhlmann
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Publication number: 20120132689Abstract: The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank (5), wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2) wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber (2), and wherein the metering device (4) comprises a movable displacement member (16) for ejecting the fuel out of the metering space (12), wherein the movement of the displacement member (16) is supplied by the pressure of the fuel as the energy source.Type: ApplicationFiled: November 22, 2011Publication date: May 31, 2012Applicant: HILTI AKTIENGESELLSCHAFTInventors: Tilo Dittrich, Thomas Sperrfechter, Heeb Norbert, Peter Stauss
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Publication number: 20120132687Abstract: The invention relates to a fastener driving tool comprising a tank (5) for storing a fuel, in particular liquefied petroleum gas, a combustion chamber (2) connected to the tank, wherein the combustion chamber (2) has a movable piston for powering a driving plunger, and a metering device (4) arranged between the tank (5) and the combustion chamber (2), wherein a defined quantity of fuel can be transported by means of the metering device (4) from a metering space (12) into the combustion chamber, wherein the metering device (4) comprises an electric stepper motor (15) by means of which the defined amount can be varied as a function of a temperature.Type: ApplicationFiled: November 22, 2011Publication date: May 31, 2012Applicant: Hilti AktiengesellschaftInventors: Tilo Dittrich, Heeb Norbert, Peter Stauss, Simon Beauvais
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Patent number: 8173991Abstract: An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.Type: GrantFiled: September 12, 2008Date of Patent: May 8, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Peter Stauss, Matthias Peter, Alexander Walter