Patents by Inventor Peter Stauss
Peter Stauss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10923629Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.Type: GrantFiled: November 22, 2017Date of Patent: February 16, 2021Assignee: OSRAM OLED GmbHInventors: Alexander Tonkikh, Peter Stauss
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Patent number: 10639777Abstract: The invention relates to a drive-in device, comprising a drive-in piston, guided in a cylinder, for driving a nail member into a workpiece, and a combustion chamber arranged above the drive-in piston, said combustion chamber being Tillable with a combustion gas, wherein the combustion chamber has a bottom that is adjustable along an axis, wherein the bottom has a groove that extends in the circumferential direction and has an inserted seal which bears in a radial direction against a rigid combustion-chamber wall, wherein a front surface, in the axial direction, of the seal protrudes in the direction of the axis from a terminating plane of the groove.Type: GrantFiled: December 16, 2015Date of Patent: May 5, 2020Assignee: HILTI AKTIENGESELLSCHAFTInventors: Peter Stauss-Reiner, Norbert Heeb, Thomas Sperrfechter, Markus Woerner, Tilo Dittrich
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Patent number: 10583547Abstract: A method and a system for controlling injection processes in liquid fuel-operated setting devices is provided wherein a time-controlled metering device supplies fuel from a fuel tank to a combustion chamber. In order to further improve control of injection processes in the liquid fuel-operated setting devices, a metering time interval of the time-controlled metering device is adapted to the age of the fuel tank.Type: GrantFiled: March 31, 2015Date of Patent: March 10, 2020Assignee: HILTI AKTIENGESELLSCHAFTInventors: Peter Stauss-Reiner, Norbert Heeb, Tilo Dittrich
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Patent number: 10510916Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.Type: GrantFiled: May 26, 2017Date of Patent: December 17, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Mohammad Tollabi Mazraehno, Peter Stauß, Alvaro Gomez-Iglesias
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Publication number: 20190280159Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.Type: ApplicationFiled: November 22, 2017Publication date: September 12, 2019Inventors: Alexander TONKIKH, Peter STAUSS
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Patent number: 10406665Abstract: A setting device is provided, comprising a housing, a combustion chamber having an ignition apparatus, a storage container having a container wall for storing fuel, a dosing apparatus for adding a specified volume of fuel to the combustion chamber, an apparatus, such as a firing pin, for inserting a setting element into a setting object, wherein a setting force can be applied to the apparatus as a result of the pressure of combustion gas such that the apparatus is operable by combustion force, a control unit, and a temperature sensor for detecting the temperature of the fuel in the storage container. The setting device is designed such that, while the storage container is connected to the setting device, the temperature sensor mechanically contacts an outer surface of the container wall, for indirect detection of the temperature of the fuel.Type: GrantFiled: November 25, 2014Date of Patent: September 10, 2019Assignee: Hilti AktiengesellschaftInventors: Tilo Dittrich, Norbert Heeb, Peter Stauss-Reiner
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Publication number: 20190221703Abstract: A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlmGa1-n-mInnN with 0?n?1, 0?m?1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.Type: ApplicationFiled: May 26, 2017Publication date: July 18, 2019Applicant: OSRAM Opto Semiconductors GmbHInventors: Mohammad Tollabi Mazraehno, Peter Stauß, Alvaro Gomez-Iglesias
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Publication number: 20190109246Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment a chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure includes multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extend continuously over the entire multi-quantum-well structure, wherein seen in a cross-section parallel to the growth direction, the multi-quantum-well structure has at least one emission region and multiple transport regions, wherein the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission region, wherein, along the growth direction, the transport regions have a constant width, and wherein the quantum-well layers and the barrier layers are oriented parallel to one another in the emission region and in the transport regions.Type: ApplicationFiled: November 20, 2018Publication date: April 11, 2019Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 10249787Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.Type: GrantFiled: March 1, 2016Date of Patent: April 2, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Tobias Meyer, Thomas Lehnhardt, Matthias Peter, Asako Hirai, Juergen Off, Philipp Drechsel, Peter Stauss
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Publication number: 20190047129Abstract: A combustion chamber has a combustion chamber wall formed as a hollow cylinder defining a cylinder axis, a bottom that is adjustable along the cylinder axis within the hollow cylinder, relative to the combustion chamber wall, and a seal, which lies against the bottom on the one side and against the combustion chamber wall on the other side, in a radial direction with reference to the cylinder axis. The seal comprises a first seal ring extending in the circumferential direction with reference to the cylinder axis and has a first interruption, and a second seal ring extending in the circumferential direction with reference to the cylinder axis and has a second interruption. The first interruption has a first angular position along the circumferential direction, and the second interruption has a second angular position along the circumferential direction, wherein the first angular position and the second angular position form an angle.Type: ApplicationFiled: January 31, 2017Publication date: February 14, 2019Applicant: Hilti AktiengesellschaftInventors: Thomas SPERRFECHTER, Thorsten BARTZ, Peter STAUSS-REINER, David MEIER
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Patent number: 10164134Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.Type: GrantFiled: March 29, 2016Date of Patent: December 25, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Patent number: 10147601Abstract: What is specified is a method for producing a layer structure (10) as a buffer layer of a semiconductor component, said method comprising the following steps: a) provision of a carrier (1), which has a silicon surface (1a), b) deposition of a first layer sequence (2), which comprises a seeding layer (21) containing aluminum and nitrogen, on the silicon surface (1a) of the carrier (1) along a stacking direction (H) running perpendicular to a main plane of extent of the carrier (1), c) three-dimensional growth of a 3D-GaN layer (3), which is formed with gallium nitride, on a top surface (2a) of the first layer sequence (2) which is remote from the silicon surface (1a), d) two-dimensional growth of a 2D-GaN layer (4), which is formed with gallium nitride, on the outer surfaces (3a) of the 3D-GaN layer (3) which are remote from the silicon surface (1a).Type: GrantFiled: April 13, 2015Date of Patent: December 4, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Philipp Drechsel, Werner Bergbauer, Juergen Off, Peter Stauss
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Publication number: 20180083160Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.Type: ApplicationFiled: March 1, 2016Publication date: March 22, 2018Inventors: Tobias MEYER, Thomas LEHNHARDT, Matthias PETER, Asako HIRAI, Juergen OFF, Philipp DRECHSEL, Peter STAUSS
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Publication number: 20180062031Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.Type: ApplicationFiled: March 29, 2016Publication date: March 1, 2018Inventors: Asako Hirai, Tobias Meyer, Philipp Drechsel, Peter Stauß, Anna Nirschl, Alvaro Gomez-Iglesias, Tobias Niebling, Bastian Galler
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Publication number: 20170348840Abstract: The invention relates to a drive-in device, comprising a drive-in piston which is guided in a cylinder for driving a nail element into a workpiece and comprising a combustion chamber which is arranged over the drive-in piston and which can be filled with a combustion gas, said combustion chamber comprising a cylindrical portion which is symmetrical about a central axis (A). A movable combustion chamber wall of the combustion chamber can be adjusted along the central axis (A), and a spring is supported between the movable combustion chamber wall and a housing. A force vector (F) of the spring has a lateral offset (V) with respect to the central axis (A).Type: ApplicationFiled: December 15, 2015Publication date: December 7, 2017Inventors: Markus WOERNER, Thomas SPERRFECTER, Peter STAUSS-REINER
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Publication number: 20170341210Abstract: The invention relates to a drive-in device, comprising a drive-in piston, guided in a cylinder, for driving a nail member into a workpiece, and a combustion chamber arranged above the drive-in piston, said combustion chamber being Tillable with a combustion gas, wherein the combustion chamber has a bottom that is adjustable along an axis, wherein the bottom has a groove that extends in the circumferential direction and has an inserted seal which bears in a radial direction against a rigid combustion-chamber wall, wherein a front surface, in the axial direction, of the seal protrudes in the direction of the axis from a terminating plane of the groove.Type: ApplicationFiled: December 16, 2015Publication date: November 30, 2017Inventors: Peter STAUSS-REINER, Norbert HEEB, Thomas SPERRFECHTER, Markus WOERNER, Tilo DITTRICH
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Publication number: 20170334051Abstract: The invention relates to a drive-in device comprising a drive-in piston which is guided in a cylinder for driving a nail element into a workpiece and comprising a combustion chamber which is arranged over the drive-in piston and which can be filled with a combustion gas. A movable adjusting rod engages through a feedthrough across an axial length (L) in a housing of the combustion chamber, and a guide gap is formed between the adjusting rod and the feedthrough. A recess is formed on at least one of the adjusting rod or the feedthrough, and a radial distance between the adjusting rod and the feedthrough in the region of the recess is greater than a radial height of the guide gap.Type: ApplicationFiled: December 16, 2015Publication date: November 23, 2017Inventors: Norbert HEEB, Tilo DITTRICH, Peter STAUSS-REINER
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Patent number: 9685589Abstract: An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer.Type: GrantFiled: September 25, 2013Date of Patent: June 20, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
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Patent number: 9660137Abstract: A method is provided for producing a nitride compound semiconductor device. A growth substrate has a silicon surface. A buffer layer, which comprises AlxInyGa1-x-yN with 0?x?1, 0?y?1 and x+y?1, is grown onto the silicon surface of the substrate. A semiconductor layer sequence is grown onto the buffer layer. The buffer layer includes a material composition that varies in such a way that a lateral lattice constant of the buffer layer increases stepwise or continuously in a first region and decreases stepwise or continuously in a second region, which follows the first region in the growth direction. At an interface with the semiconductor layer sequence, the buffer layer includes a smaller lateral lattice constant than a semiconductor layer of the semiconductor layer sequence adjoining the buffer layer.Type: GrantFiled: May 28, 2014Date of Patent: May 23, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Werner Bergbauer, Philipp Drechsel, Peter Stauss, Patrick Rode
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Publication number: 20170106514Abstract: The invention relates to a method and a system for controlling injection processes in liquid fuel-operated setting devices which comprise a fuel tank from which fuel is supplied to a combustion chamber by means of a time-controlled metering device. In order to further improve the controlling of injection processes in liquid fuel-operated setting devices, a metering time of the time-controlled device is adapted to the age of the fuel tank.Type: ApplicationFiled: March 31, 2015Publication date: April 20, 2017Inventors: Peter Stauss-Reiner, Norbert Heeb, Tilo Dittrich