Abstract: Disclosed herein is a method comprising disposing a mat composition on a surface of a semiconductor substrate; where the mat composition comprises a random copolymer comprising a first acrylate unit and a second unit; where the copolymer does not comprise a polystyrene or a polyepoxide; crosslinking the random copolymer; disposing a brush backfill composition on the substrate; such that the brush backfill composition and the mat composition alternate with each other; disposing on the brush backfill composition and on the mat composition a block copolymer that undergoes self assembly; and etching the block copolymer to create uniformly spaced channels in the semiconductor substrate.

Abstract: Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Abstract: A block copolymer useful in electron beam and extreme ultraviolet photolithography includes a first block with units derived from a base-solubility-enhancing monomer and an out-of-band absorbing monomer, and a second block having a low surface energy. Repeat units derived from the out-of-ban absorbing monomer allow the copolymer to absorb significantly in the wavelength range 150 to 400 nanometers. When incorporated into a photoresist composition with a photoresist random polymer, the block copolymer self-segregates to form a top layer that effectively screens out-of-band radiation.

Abstract: Polymeric reaction products of certain aromatic alcohols with certain aromatic aldehydes are useful as underlayers in semiconductor manufacturing processes.

Abstract: Disclosed herein is a method comprising disposing a first composition comprising a first block copolymer upon a substrate; where the first block copolymer comprises a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and disposing a second composition comprising an second copolymer upon a free surface of the first block copolymer; where the second copolymer comprises a surface free energy reducing moiety; where the surface free energy reducing moiety has a lower surface free energy than the first surface free energy and the second surface free energy; the second copolymer further comprising one or more moieties having an affinity to the first block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment.

Abstract: The invention provides compositions comprising crosslinkable BCB-functionalized materials for use in OLEDs applications. The inventive compositions can be used to form hole-transporting materials for use in electroluminescent devices. In particular, the invention provides a composition comprising at least one compound selected from Structure A, as described herein.

Abstract: Disclosed herein is a pattern forming method comprising providing a substrate devoid of a layer of a brush polymer; disposing upon the substrate a composition comprising a block copolymer comprising a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other; and an additive polymer where the additive polymer comprises a bottlebrush polymer; where the bottlebrush polymer comprises a polymeric chain backbone and a grafted polymer that are bonded to each other; and where the bottlebrush polymer comprises a polymer that is chemically and structurally the same as one of the polymers in the block copolymer or where the bottlebrush polymer comprises a polymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition to facilitate domain separation between the first polymer and the second polymer.

Abstract: Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a bottle brush polymer; where the bottle brush polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a graft copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent.

Abstract: A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.

Abstract: Disclosed herein is a composition comprising a brush polymer; where the brush polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and a block copolymer; where the block copolymer comprises a first block and a second block that are covalently bonded to each other; where the first block comprises a first polymer and a second block comprises a second polymer; where the first polymer comprises less than or equal to 10 atomic percent polysiloxane; where the second polymer comprises at least 15 atomic percent polysiloxane; where the brush polymer is chemically different from the first polymer and the second polymer; and where the first polymer is chemically different from the second polymer; and wherein the block copolymer is disposed upon the brush polymer.

Abstract: Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate.

Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.

Abstract: The invention provides compositions comprising crosslinkable BCB-functionalized materials for use in OLEDs applications. The inventive compositions can be used to form hole-transporting materials for use in electroluminescent devices. In particular, the invention provides a composition comprising at least one compound selected from Structure A, as described herein.

Abstract: Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

Abstract: In one aspect, structures are provided that comprise a photonic crystal comprising a dielectric layer comprising therein one or more light-emitting nanostructure materials. In a further aspect, structures are provided that comprise a dielectric layer comprising first and second sets of light-emitting nanostructure materials at differing depths within the dielectric layer.

Abstract: A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.

Abstract: A light emitting device comprising a polymeric charge transfer layer, wherein the polymeric charge transfer layer is formed from a composition comprising a polymer, said polymer comprising one or more polymerized units derived from Structure A, and one or more polymerized units derived from Structure (B), each as follows: A) a monomer having the Structure (A), as defined herein: and B) a monomer that comprises one or more dienophile moieties.

Abstract: The invention provides compositions comprising BCB-functionalized materials for use in OLEDs applications. The inventive compositions can be used to form hole-transporting materials for use in electroluminescent devices. In particular, the invention provides for compositions, charge transport film layers, and light emitting devices, comprising, or formed from, a polymer, which comprises one or more polymerized units derived from Structure (A).

Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.

Abstract: Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.