Abstract: Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

Abstract: A method of forming a pattern comprises diffusing an acid, generated by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer comprising an acid decomposable group and an attachment group, to form an interpolymer crosslink and/or covalently bonded to the surface of the substrate. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region at the surface, in the shape of the pattern. The photosensitive layer is removed to forming a self-assembling layer comprising a block copolymer having a block with an affinity for the polar region, and a block having less affinity than the first. The first block forms a domain aligned to the polar region, and the second block forms a domain aligned to the first. Removing either the first or second domain exposes a portion of the underlayer.

Abstract: A method of forming a pattern comprises diffusing an acid formed by irradiating a portion of a photosensitive layer, into an underlayer comprising an acid sensitive copolymer having acid decomposable groups and attachment groups covalently bonded to the surface of the substrate and/or forming an interpolymer crosslink. Diffusing comprises heating the underlayer and photosensitive layer. The acid sensitive group reacts with the diffused acid to form a polar region on the underlayer, with the shape of the pattern. The photosensitive layer is removed, forming a self-assembling layer comprising a block copolymer having a first block with an affinity for the polar region, and a second block having less affinity for the polar region. The first block forms a domain aligned to the polar region, and the second block forms another domain aligned to the first. Removing either domain exposes a portion of the underlayer.

Abstract: Disclosed herein is a composition comprising a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to crosslink the graft block copolymer; a photoacid generator; and a crosslinking agent.

Abstract: Compositions containing certain organometallic oligomers suitable for use as spin-on, metal hardmasks are provided, where such compositions can be tailored to provide a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the present compositions.

Abstract: Compositions suitable for forming oxymetal hardmask layers are provided. Methods of forming oxymetal hardmask layers using such compositions are also provided, where the surface of the oxymetal hardmask layer formed has a water contact angle substantially matched to that of subsequently applied organic coatings.

Abstract: Methods of treating the surface of a metal-containing hardmask used in the manufacture of semiconductors by contacting the hardmask surface with a composition capable of adjusting the water contact angle so as to substantially match that of subsequently applied organic coatings are provided.

Abstract: Disclosed herein is a composition comprising a graft block copolymer comprising a copolymer comprising a backbone polymer; and a first graft polymer that comprises a surface energy reducing moiety; the first graft polymer being grafted onto the backbone polymer; where the surface energy reducing moiety comprises a fluorine atom, a silicon atom, or a combination of a fluorine atom and a silicon atom; a photoacid generator; and a crosslinking agent.

Abstract: Disclosed herein is a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to crosslink the graft block copolymer.

Abstract: Disclosed herein is a copolymer comprising a backbone polymer; and a first graft polymer that comprises a surface energy reducing moiety; the first graft polymer being grafted onto the backbone polymer; where the surface energy reducing moiety comprises a fluorine atom, a silicon atom, or a combination of a fluorine atom and a silicon atom.

Abstract: Disclosed herein is a composition comprising a graft block copolymer comprising a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft polymer comprises a surface energy reducing moiety; and a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative to crosslink the graft block copolymer; a photoacid generator; and a crosslinking agent.

Abstract: Compositions containing certain organometallic oligomers suitable for use as spin-on, metal hardmasks are provided, where such compositions can be tailored to provide a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the present compositions.

Abstract: Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; and a second block derived from an acrylate monomer; where a chi parameter that measures interactions between the first block and the second block is greater than or equal to about 0.05, when measured at 240° C. Disclosed herein too is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing an acrylate monomer; and where the block copolymer has a chi parameter of greater than or equal to about 0.05, when measured at 240° C.; where the chi parameter is a measure of interactions between the first block and the second block.

Abstract: Disclosed herein is a method of manufacturing self assembled structures that have lamellae or cylinders whose longitudinal axis is parallel or perpendicular to a surface upon which the self assembled structure is disposed. The method comprises disposing a random copolymer on the substrate to form a surface modification layer and disposing a block copolymer on the surface modification layer. The block copolymer is then subjected to etching.

Abstract: In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polymerization of a multi-hydroxy compound. Coating compositions of the invention are particularly useful employed in combination with an overcoated photoresist layer to manufacture integrated circuits.

Abstract: In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

Abstract: Compositions for use in multiple exposure photolithography and methods of forming electronic devices using a multiple exposure lithographic process are provided. The compositions find particular applicability in semiconductor device manufacture for making high-density lithographic patterns.

Abstract: In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

Abstract: Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are particularly useful as an underlying antireflective coating composition (“ARC”) employed with an overcoated photoresist layer in the manufacture of microelectronic wafers and other electronic devices.

Abstract: In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polymerization of a multi-hydroxy compound. Coating compositions of the invention are particularly useful employed in combination with an overcoated photoresist layer to manufacture integrated circuits.