Abstract: New methods are provided for manufacturing a semiconductor device. Preferred methods of the invention include depositing a photoresist on a semiconductor substrate surface followed by imaging and development of resist coating layer; applying a curable organic or inorganic composition over the resist relief image; etching to provide a relief image of the resist encased by the curable composition; and removing the resist material whereby the curable organic or inorganic composition remains in a relief image of increased pitch relative to the previously developed resist image.

Abstract: Chemically-amplified positive photoresist compositions are provided that contain a resin that comprises acetal and alicyclic groups. Photoresists of the invention can exhibit notably enhanced lithographic properties. Preferred photoresists of the invention comprise one or more photoacid generator compounds and one or more phenolic resins comprise one or more photoacid-labile acetal groups and one or more alicyclic groups such as adamantyl.

Abstract: New photoresists are provided that can be applied and imaged with reduced undesired outgassing and/or as thick coating layers. Preferred resists of the invention are chemically-amplified positive-acting resists that contain photoactive and resin components.

Abstract: This invention relates to resins and photoresist compositions that comprise such resins. Preferred polymers of the invention comprise adjacent saturated carbon atoms, either integral or pendant to the polymer backbone, that have a substantially gauche conformation. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications, polymers of the invention that have a population of dihedral angles of adjacent saturated carbon atoms that are enriched in substantially gauche conformations can provide reduced undesired absorbance of the high energy exposure radiation.

Abstract: In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polymerization of a multi-hydroxy compound. Coating compositions of the invention are particularly useful employed in combination with an overcoated photoresist layer to manufacture integrated circuits.

Abstract: Disclosed are spirocyclic olefin polymers, methods of preparing spirocyclic olefin polymers, photresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: Methods are provides methods are provided to prepare photoresist and organic antireflective coating composition with a filter having a mean pore size of less than about 0.4 microns. Photoresist compositions and antireflective coatings produced by such methods can provide manufactured microelectronic devices that have significantly reduced defects. Photoresist and antireflective compositions obtainable by such methods also are provided.

Abstract: Antireflective compositions are provided that contain a basic additive material. Such use of a basic material can significantly decrease or even completely eliminate notching of an overcoated photoresist relief image. Antireflective formulations of the invention are preferably crosslinking compositions and may contain a resin component in addition to the basic additive. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Abstract: A system and method is provided for recycling raw materials from a plurality waste streams generated by waste stream providers and includes a waste stream monitoring module for monitoring the plurality of waste streams and determining an amount of reusable raw materials contained in each of the plurality of waste streams. Also included is a reusable materials database for storing the amount of each of the raw materials contained in any of the plurality of waste streams. A user operating an access device communications with the reusable materials database for viewing the amount of each of said raw materials.

Abstract: Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Abstract: In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polymerization of a multi-hydroxy compound. Coating compositions of the invention are particularly useful employed in combination with an overcoated photoresist layer to manufacture integrated circuits.

Abstract: The present invention provides novel photoresist compositions that comprise a resin binder, a photoacid generator compound and an added amine component. In a first aspect, the added amine preferably is 1) non-aromatic 2) has from about 9 to about 16 carbon atoms, 3) contains no primary or secondary amine groups, and/or 4) contains no multiple tertiary amine groups where two tertiary groups are separated by a linkage of optionally substituted ethylene. In a related aspect, the added amine is a non-aromatic amine that comprises either 1) a tertiary nitrogen alicyclic ring member, and preferably is at junction position between a bicyclic or other multi-ring ring system; or 2) a tertiary nitrogen that is not a ring member, and is substituted by at least two tertiary or quaternary carbon radicals.

Abstract: Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Abstract: Disclosed are compositions and methods for providing substantially planarized surfaces in the manufacture of electronic devices. Also disclosed are compositions and methods for protecting apertures in the manufacture of electronic devices.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of non-ionic and ionic PAGS. Preferred resists of the invention preferably are imaged with 248 nm and/or 193 nm exposure wavelengths to provide highly resolved small dimension features.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: Disclosed are spirocyclic olefin ploymers, methods of preparing spirocyclic olefin polymers, photoresist compositions including spirocyclic olefin resin binders and methods of forming relief images using such photoresist compositions.

Abstract: Disclosed are compositions and methods for providing substantially planarized surfaces in the manufacture of electronic devices. Also disclosed are compositions and methods for protecting apertures in the manufacture of electronic devices.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.