Patents by Inventor Peter Wai
Peter Wai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7370039Abstract: A method and system to minimize to redundancy in testing a new software system by utilizing a knowledge base is provided. The knowledge base may be represented in a form of a decision tree including leaf nodes which store previously tested optimal configurations. When the knowledge base does not contain an optimal configuration for the new software, an optimal solution for the new software system may be determined by adding a further decision tree branch to the initial decision tree. A desirable tree branch may be selected from a table including a predetermined set of desirable tree branches for each category of software. As a result, the number of solutions to be tested on the input software may be limited and cost and effort to run redundant tests on a software system may be reduced.Type: GrantFiled: April 5, 2005Date of Patent: May 6, 2008Assignee: International Business Machines CorporationInventors: Kenneth Michael Ashcraft, Flavio Alvarenga Bergamaschi, Viktors Bertsis, Erin Christine Burke, Duy Huynh, Santhosh Rao, Duc J. Vianney, Peter Wai Yee Wong
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Patent number: 7340536Abstract: A network management apparatus and method for determining the topology of a network 1 is described. The present invention uses data relating to discovered devices on the network 1, typically network management address table data, to build a network tree. Due to the presence of unsupported or unmanaged connecting network devices, some branches of the resulting tree may not be resolved. In order to address this, for each unresolved branch of the network tree, the present invention attempts to determine the type of each of the discovered network devices on the branch, and if the type of every discovered network device on the branch is determined to be an endstation type, the present invention determines that an undiscovered connecting device is present on the branch.Type: GrantFiled: January 22, 2002Date of Patent: March 4, 2008Assignee: 3Com CorporationInventors: Simon Peter Valentine, Christopher Robert Linzell, Peter Wai Lam, Andrew Peter White
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Publication number: 20070168053Abstract: A computer implemented method, data processing system, and computer usable code are provided for analyzing input/output problems. A monitoring agent collects input/output data from a plurality of levels in a multi-level input/output stack. The monitoring agent analyzes the input/output data from the plurality of levels to form an analysis. A determination is then made as to whether the analysis requires an action and an action is initiated in response to a determination that the analysis requires an action.Type: ApplicationFiled: January 18, 2006Publication date: July 19, 2007Inventors: Richard Hendrickson, Santhosh Rao, Peter Wai Wong
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Patent number: 7157384Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: December 22, 2004Date of Patent: January 2, 2007Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7153787Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: GrantFiled: January 27, 2005Date of Patent: December 26, 2006Assignee: Applied Materials, Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Patent number: 7030041Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: GrantFiled: March 15, 2004Date of Patent: April 18, 2006Assignee: Applied Materials Inc.Inventors: Lihua Li, Tzu-Fang Huang, Jerry Sugiarto, legal representative, Li-Qun Xia, Peter Wai-Man Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park, Dian Sugiarto, deceased
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Patent number: 7024105Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.Type: GrantFiled: October 10, 2003Date of Patent: April 4, 2006Assignee: Applied Materials Inc.Inventors: Mark A. Fodor, Sophia M. Velastegui, Soovo Sen, Visweswaren Sivaramakrishnan, Peter Wai-Man Lee, Mario David Silvetti
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Patent number: 6943127Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: GrantFiled: November 22, 2002Date of Patent: September 13, 2005Assignee: Applied Materials Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Patent number: 6911403Abstract: A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.Type: GrantFiled: August 20, 2003Date of Patent: June 28, 2005Assignee: Applied Materials, Inc.Inventors: Lihua Li, Tsutomu Tanaka, Tzu-Fang Huang, Li-Qun Xia, Dian Sugiarto, Visweswaren Sivaramakrishnan, Peter Wai-Man Lee, Mario David Silvetti
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Patent number: 6838393Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: September 19, 2002Date of Patent: January 4, 2005Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Publication number: 20040161536Abstract: A method for depositing, with controlled thickness and thickness non-uniformity, a layer of a low-k dielectric material using a chemical vapor deposition process (CVD), which deposits the material for a duration of time during part of the deposition at a higher pressure of reactant gas than during the remaining time of the deposition.Type: ApplicationFiled: February 14, 2003Publication date: August 19, 2004Applicant: Applied Materials, Inc.Inventors: Chi-I Lang, Seon-Mee Cho, Peter Wai-Man Lee
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Patent number: 6709715Abstract: A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2.2 to about 2.5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.Type: GrantFiled: June 17, 1999Date of Patent: March 23, 2004Assignee: Applied Materials Inc.Inventors: Chi-I Lang, Shin-Puu Jeng, Yeming Jim Ma, Fong Chang, Peter Wai-Man Lee, David W. Cheung
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Patent number: 6663713Abstract: A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber.Type: GrantFiled: October 22, 1996Date of Patent: December 16, 2003Assignee: Applied Materials Inc.Inventors: Stuardo A. Robles, Visweswaren Sivaramakrishnan, Bang C. Nguyen, Gayathri Rao, Gary Fong, Vicente Lam, Peter Wai-Man Lee, Mei Chang
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Publication number: 20030211244Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.Type: ApplicationFiled: April 8, 2003Publication date: November 13, 2003Applicant: Applied Materials, Inc.Inventors: Lihua Li, Wen H. Zhu, Tzu-Fang Huang, Li-Qun Xia, Ellie Y. Yieh, Son Van Nguyen, Lester A. D'Cruz, Troy Kim, Dian Sugiarto, Peter Wai-Man Lee, Hichem M'Saad, Melissa M. Tam, Yi Zheng, Srinivas D. Nemani
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Publication number: 20030139035Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: ApplicationFiled: September 19, 2002Publication date: July 24, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Publication number: 20030104708Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: ApplicationFiled: November 22, 2002Publication date: June 5, 2003Applicant: Applied Materials, Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Patent number: 6560230Abstract: Providing different levels of quality of service for different data flows being transported over a data link requires a very fast way to schedule individual packets for forwarding on the data link. The invention provides scheduling methods which give preference to higher priority packets while treating lower priority packets fairly. The methods can provide shorter latencies for higher priority packets than can many prior scheduling methods. The methods and apparatus of the invention are readily adaptable for use with scheduling rules provided in the form of hierarchical policy trees.Type: GrantFiled: May 21, 1999Date of Patent: May 6, 2003Assignee: Redback Networks Inc.Inventors: Renwei Li, Peter Wai-Tong Kwong, Paul Terry, Ronald Leonard Westfall
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Patent number: 6523494Abstract: A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.Type: GrantFiled: September 12, 2000Date of Patent: February 25, 2003Assignee: Applied Materials, Inc.Inventors: Dung-Ching Perng, Peter Wai-Man Lee, Thomas E. Deacon
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Patent number: 6510002Abstract: This invention relates to apparatus for generating a three-dimensional display from a conventional television screen or computer monitor, and in particular to an adapter that may be placed in front of a television screen or computer monitor to enable three-dimensional images to be perceived by a viewer.Type: GrantFiled: January 25, 2000Date of Patent: January 21, 2003Assignee: City University of Hong KongInventor: Peter Wai Ming Tsang
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Publication number: 20030014548Abstract: A network management apparatus and method for determining the topology of a network 1 is described. The present invention uses data relating to discovered devices on the network 1, typically network management address table data, to build a network tree. Due to the presence of unsupported or unmanaged connecting network devices, some branches of the resulting tree may not be resolved. In order to address this, for each unresolved branch of the network tree, the present invention attempts to determine the type of each of the discovered network devices on the branch, and if the type of every discovered network device on the branch is determined to be an endstation type, the present invention determines that an undiscovered connecting device is present on the branch.Type: ApplicationFiled: January 22, 2002Publication date: January 16, 2003Applicant: 3Com CorporationInventors: Simon Peter Valentine, Christopher Robert Linzell, Peter Wai Lam, Andrew Peter White