Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract: A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.

Abstract: A method and apparatus for forming thin copolymer layers having low dielectric constants on semiconductor substrates includes in situ formation of p-xylylenes, or derivatives thereof, from solid or liquid precursors such as cyclic p-xylylene dimer, p-xylene, 1,4-bis(formatomethyl)benzene, or 1,4-bis(N-methyl-aminomethyl)benzene. P-xylylene is copolymerized with a comonomer having labile groups that are converted to dispersed gas bubbles after the copolymer layer is deposited on the substrate. Preferred comonomers comprise diazocyclopentadienyl, diazoquinoyl, formyloxy, or glyoxyloyloxy groups.

Abstract: A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.

Abstract: A system and method for displaying MPEG-2 packets as a hierarchy of tables within a window of a graphical display. This hierarchial display is updated continuously as new packets are received, thus providing a real time display. When a packet is received, and the location of that packet has not been identified, the packet is placed at the top of the hierarchy. Once a subsequent packet is received wherein the subsequent packet identifies the location of the earlier received packet, the earlier received packet is moved to its correct location within the hierarchy. When a user of the system clicks one of the tables within the hierarchy, the system saves the next data packet or packets containing data for the table into a display table buffer. The system then displays a second window and formats the data from the display table buffer into the second window.

Abstract: A substrate processing system including a vacuum chamber; a pedestal which holds a substrate during processing; and a gas distribution structure which during processing is located adjacent to and distributes a process gas onto a surface of the substrate that is held on the pedestal for processing. The gas distribution structure includes a gas distribution faceplate including a plurality of gas distribution holes formed therethrough, wherein the holes of at least a first set of the plurality of holes pass through the faceplate at angles other than perpendicular to the surface of substrate.