Abstract: Methods for increasing defect tolerance and fault tolerance in systems containing interconnected components, in which a signal level is classified as belonging to one of a plurality of different, distinguishable classes based on one or more thresholds separating the signal-level classes, and defect-and-fault tolerant systems embodying the methods. An electronic-device embodiment including an array of nanowire crossbars, the nanoscale memory elements within the nanowire crossbars addressed through conventional microelectronic address lines, and a method embodiment for providing fault-tolerant interconnection interfaces with electrically distinguishable signal levels are described.

Abstract: Controlling the propagation of electromagnetic radiation is described. A photonic bandgap medium is placed in the path of the electromagnetic radiation, the photonic bandgap medium comprising a photorefractive material. Control radiation is projected onto a surface of the photonic bandgap medium. The control radiation spatially varies a refractive index of the photorefractive material to control propagation of the electromagnetic radiation through the photonic bandgap medium.

Abstract: Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed.

Abstract: A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

Abstract: A method for configuring an associative array within a molecular-junction-nanowire crossbar, and nanoscale associative arrays configured by the method Keys are encoded as field-effect transistors selectively configured within the molecular-junction-nanowire crossbar, and values associated with keys are encoded as diodes selectively configured at molecular-junction-nanowire-crossbar junctions. Keys input into key registers result in a current signal indicating whether or not the key is stored within the associative array as part of a key/value pair and, if stored in the associative array, the value associated with the input key is output.

Abstract: A molecular crossbar latch is provided, comprising two control wires and a signal wire that crosses the two control wires to form a junction with each control wire. The latch further includes a control mechanism for controllably electrically connecting and disconnecting signal input to the latch, thus allowing the input to change its logic value after the signal is latched while the signal wire retains its latched value. Each junction forms a switch, the junction having a functional dimension in nanometers. The crossbar latch permits latching a logic value on the signal wire. Further, methods are provided for latching logic values in a logic array, for inverting a logic value, and for restoring a voltage value of a signal in a nano-scale wire.

Abstract: A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

Abstract: A scan-print device is hand-held and is scanned over the surface of a paper-like rewritable sheet. The sheet has a colorant responsive to a linear array of pixel-sized electric fields written over the sheet by the scan-print device during each scan, producing a bistable pixel (e.g., black or white) in response to field polarity. The bi-stable, rewritable colorant is highly energy efficient, requiring energy only to change an image, not to hold or illuminate it. Once a series of scans sufficient to cover the entire sheet has been made, the printed image appears as if printed conventionally. The print remains stable until reprinted or intentionally erased. Combined with hand-held scanner-copier technology, a portable copier is also implemented.

Abstract: Quantum information processing structures and methods use photons and four-level matter systems in electromagnetically induced transparency (EIT) arrangements for one and two-qubit quantum gates, two-photon phase shifters, and Bell state measurement devices. For efficient coupling of the matter systems to the photons while decoupling the matter systems from the phonon bath, molecular cages or molecular tethers maintain the atoms within the electromagnetic field of the photon, e.g., in the evanescent field surrounding the core of an optical fiber carrying the photons. To reduce decoherence caused by spontaneous emissions, the matter systems can be embedded in photonic bandgap crystals or the matter systems can be selected to include metastable energy levels.

Abstract: A method for configuring an associative array within a molecular-junction-nanowire crossbar, and nanoscale associative arrays configured by the method Keys are encoded as field-effect transistors selectively configured within the molecular-junction-nanowire crossbar, and values associated with keys are encoded as diodes selectively configured at molecular-junction-nanowire-crossbar junctions. Keys input into key registers result in a current signal indicating whether or not the key is stored within the associative array as part of a key/value pair and, if stored in the associative array, the value associated with the input key is output.

Abstract: A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

Abstract: Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.

Abstract: A method of forming an assembly of isolated nanowires of at least one material within a matrix of another material is provided. The method comprises: providing a substrate; forming a catalyst array on a major surface of the substrate; growing an array of the nanowires corresponding with the catalyst array, the nanowires, each comprising at least one material; and forming a matrix of another material that fills in spaces between the nanowires. The method is useful for producing a variety of structures useful in a number of devices, such as photonic bandgap structures and quantum dot structures.

Abstract: A computing system for implementing at least one electronic circuit with gain comprises at least one two-dimensional molecular switch array. The molecular switch array is formed by assembling two or more crossed planes of wires into a configuration of devices. Each device comprises a junction formed by a pair of crossed wires and at least one connector species that connects the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, and includes a switching capability provided by both (1) one or more connector species and the pair of crossed wires and (2) a configurable nano-scale wire transistor having a first state that functions as a transistor and a second state that functions as a conducting semiconductor wire. Specific connections are made to interconnect the devices and connect the devices to two structures that provide high and low voltages.

Abstract: The invention is a system and method for executing programs. The invention involves a plurality of processing elements, wherein a processing element of the plurality of processing elements generates a branch command. The invention uses a programmable network that transports the branch command from the processing element to one of a first destination processing element by a first programmed transport route and a second destination processing element by a second programmed transport route. The branch command is received and processed by one of the first destination processing element and the second destination processing element, and is not processed by the other of the first processing element and the second processing element.

Abstract: The invention is a system and method for reconfigurable computers. The invention involves a plurality of reconfigurable component clusters (RCCs), each of which can change their respective configuration upon receiving a configuration command. The invention uses a reconfiguration network for distributing the configuration command to the RCCs, wherein the reconfiguration network comprises a plurality of cells, wherein each RCC is connected to a cell.

Abstract: A molecular crossbar latch is provided, comprising two control wires and a signal wire that crosses the two control wires to form a junction with each control wire. The latch further includes a control mechanism for controllably electrically connecting and disconnecting signal input to the latch, thus allowing the input to change its logic value after the signal is latched while the signal wire retains its latched value. Each junction forms a switch, the junction having a functional dimension in nanometers. The crossbar latch permits latching a logic value on the signal wire. Further, methods are provided for latching logic values in a logic array, for inverting a logic value, and for restoring a voltage value of a signal in a nano-scale wire.

Abstract: Bipolar and field effect molecular wire transistors are provided. The molecular wire transistor comprises a pair of crossed wires, with at least one of the wires comprising a doped semiconductor material. The pair of crossed wires forms a junction where one wire crosses another, one wire being provided with Lewis acid functional groups and the other wire being provided with Lewis base functional groups. If both wires are doped semiconductor, such as silicon, one is P-doped and the other is N-doped. One wire of a given doping comprises the emitter and collector portions and the other wire comprises the base portion, which is formed by modulation doping on the wire containing the emitter and collector at the junction where the wires cross and between the emitter and collector portions, thereby forming a bipolar transistor. Both NPN and PNP bipolar transistors may be formed.

Abstract: A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.

Abstract: A route to the fabrication of electronic devices is provided, in which the devices consist of two crossed wires sandwiching an electrically addressable molecular species. The approach is extremely simple and inexpensive to implement, and scales from wire dimensions of several micrometers down to nanometer-scale dimensions. The device of the present invention can be used to produce crossbar switch arrays, logic devices, memory devices, and communication and signal routing devices. The present invention enables construction of molecular electronic devices on a length scale than can range from micrometers to nanometers via a straightforward and inexpensive chemical assembly procedure. The device is either partially or completely chemically assembled, and the key to the scaling is that the location of the devices on the substrate are defined once the devices have been assembled, not prior to assembly.