Abstract: Multi-band power amplification system having enhanced efficiency through elimination of band selection switch. In some embodiments, a power amplification system can include a plurality of power amplifiers (PAs), with each PA being configured to receive and amplify a radio-frequency (RF) signal in a frequency band. The power amplification system can further include an output filter coupled to each of the PAs by a separate output path such that the power amplification system is substantially free of a band selection switch between the plurality of PAs and their corresponding output filters. Each PA can be further configured to drive approximately a characteristic load impedance of the corresponding output filter by, for example, the PA being operated with a high-voltage (HV) supply.

Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

Abstract: Reduced power amplifier size through elimination of matching network. In some embodiments, a power amplification system can include a power amplifier (PA) configured to receive and amplify a radio-frequency (RF) signal. The power amplification system can further include a filter coupled to the PA and configured to condition the amplified RF signal. The PA can be further configured to drive approximately a characteristic load impedance of the filter. Such a configuration of the PA can be achieved by operating the PA with a high-voltage supply. Such a power amplification system can allow elimination of a matching network to, for example, reduce loss and device size.

Abstract: Radio-frequency amplification systems, devices and methods. In some embodiments, an amplification system can include a supply circuit configured to provide a high supply voltage in an average power tracking mode. The amplification system can further include an amplifier configured to operate with the high supply voltage and provide an impedance that substantially matches an impedance of a component coupled to an output of the amplifier. The amplification system can further include a signal path configured to route an amplified signal from the output of the amplifier to the component, with the output path being substantially free of an output matching network.

Abstract: According to some implementation, a power amplifier includes a plurality of pairs of transistors, each pair of transistors including a common emitter transistor and a common base transistor arranged in a cascode configuration. The power amplifier further includes electrical connections implemented to connect the plurality of pairs in a parallel configuration between an input node and an output node. According to some implementations, the electrical connections are configured to distribute a collector current to all of the common base transistors to thereby reduce likelihood of damage to one or more common base transistors during a thermal run-away event.

Abstract: According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.

Abstract: Power amplification system with variable supply voltage. A power amplification system can include a power amplifier and a boost converter configured to provide a supply voltage to the power amplifier. The power amplification system can include a control system configured to provide a boost converter control signal to the boost converter to adjust the supply voltage based on a parameter associated with the power amplifier.

Abstract: An RF amplifier module that has a plurality of amplifiers wherein at least one of the amplifiers is powered via an envelope tracking module. The biasing input of at least one of the amplifiers is provided to the first amplifier to power the first amplifier to reduce power consumption. The first amplifier may also be powered via fixed biasing to provide greater stability of the module.

Abstract: Multi-band device having multiple miniaturized single-band power amplifiers. In some embodiments, a power amplifier die can include a semiconductor substrate, and a plurality of power amplifiers (PAs) implemented on the semiconductor substrate. Each PA can be configured to drive approximately a characteristic load impedance of a downstream component along an individual frequency band signal path, such that each PA is sized smaller than a wide band PA configured to drive more than one of the frequency bands associated with the plurality of PAs. The downstream component can include an output filter.

Abstract: Thermally rugged power amplifiers and related methods. In some embodiments, a method for manufacturing a radio-frequency amplifier can include providing or forming a semiconductor substrate, and forming an array of cascoded devices on the semiconductor substrate to be capable of amplifying a signal, such that the array of cascoded devices includes a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row. Each cascoded device can include an input stage and an output stage arranged in a cascode configuration, and each of the first and second rows can be configured such that the output stages are positioned in a staggered orientation. The staggered arrangement of the cascoded devices in the first row can be offset relative to the staggered arrangement of the cascoded devices in the second row to avoid a direct row-to-row adjacent pair of output stages.

Abstract: A Doherty power amplifier includes a carrier amplifier, a peaking amplifier, and a peaking amplifier bias circuit coupled to the peaking amplifier and configured to provide a peaking amplifier bias signal to the peaking amplifier based on a saturation level of the carrier amplifier.

Abstract: Doherty power amplifier having reduced size. In some embodiments, a power amplification system can include a supply system configured to provide a high-voltage supply signal, and a Doherty power amplifier configured to receive the high-voltage supply signal and amplify a radio-frequency (RF) signal. The power amplification system can further include an output path configured to receive and route the amplified RF signal to a filter. The output path can be substantially free of an impedance transformation circuit.

Abstract: According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.

Abstract: Radio-frequency (RF) power amplifiers driven by boost converter. In some embodiments, a power amplification system can include a supply system configured to provide a high-voltage (HV) supply signal based on a battery voltage, and a power amplifier (PA) configured to receive the HV supply signal and amplify an RF signal. The power amplification system can further include an output path configured to route the amplified RF signal to a filter. Such an output path can be substantially free of either or both of an impedance transformation circuit and a band selection switch.

Abstract: A power amplifier die includes a semiconductor substrate, a power amplifier implemented on the semiconductor substrate, a radio-frequency input configured to receive a radio-frequency input signal having a radio-frequency component and a DC bias component, a bias circuit implemented on the semiconductor substrate, the bias circuit coupled to the power amplifier, and a bias tee circuit implemented on the semiconductor substrate, the bias tee circuit configured to receive the radio-frequency input signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the radio-frequency component to the power amplifier.

Abstract: A Doherty power amplifier includes a carrier amplifier, a peaking amplifier, and a peaking amplifier bias circuit coupled to the peaking amplifier and configured to provide a peaking amplifier bias signal to the peaking amplifier based on a saturation level of the carrier amplifier.

Abstract: Power amplification system with variable supply voltage. A power amplification system can include a power amplifier and a boost converter configured to provide a supply voltage to the power amplifier. The power amplification system can include a control system configured to provide a boost converter control signal to the boost converter to adjust the supply voltage based on a parameter associated with the power amplifier.

Abstract: A power amplification system with shared common base biasing is disclosed. A method for power amplification at a controller of a power amplification system comprising a plurality of cascode amplifier sections can include receiving a band select signal indicative of one or more frequency bands of a radio-frequency input signal to be amplified and transmitted. The method may further include biasing a common base stage of each of the plurality of cascode amplifier sections, and biasing a common emitter stage of a subset of the plurality of cascode amplifier sections.

Abstract: A power amplification system includes a Doherty power amplifier (PA) configured to receive a voltage supply signal and a radio-frequency (RF) signal and generate an amplified RF signal using the voltage supply signal, the Doherty PA including a carrier amplifier and a peaking amplifier. A carrier amplifier bias circuit and a peaking amplifier bias circuit coupled to one or more of the carrier amplifier and the carrier amplifier bias circuit over a coupling path are provided wherein the peaking amplifier bias circuit is configured to provide a peaking bias signal to the peaking amplifier based on a saturation level of the carrier amplifier.

Abstract: Power amplification system with adjustable common base bias. A power amplification system can include a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The power amplification system can further include a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.