Abstract: A power amplifier (PA) system includes an amplifying transistor having a base, a collector, and an emitter. The PA system further includes a radio-frequency (RF) input configured to receive an RF input signal having an RF component and a DC bias component, a bias circuit coupled to the base of the amplifying transistor, and a bias tee circuit configured to receive the RF input signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the RF component to the base of the amplifying transistor.

Abstract: Power amplifier having staggered cascode layout for enhanced thermal ruggedness. In some embodiments, a radio-frequency (RF) amplifier such as a power amplifier (PA) can be configured to receive and amplify an RF signal. The PA can include an array of cascoded devices connected electrically parallel between an input node and an output node. Each cascoded device can include a common emitter transistor and a common base transistor arranged in a cascode configuration. The array can be configured such that the common base transistors are positioned in a staggered orientation relative to each other.

Abstract: A power amplification system includes a Doherty power amplifier (PA) configured to receive a voltage supply signal and a radio-frequency (RF) signal and generate an amplified RF signal using the voltage supply signal, the Doherty PA including a carrier amplifier and a peaking amplifier. A carrier amplifier bias circuit and a peaking amplifier bias circuit coupled to one or more of the carrier amplifier and the carrier amplifier bias circuit over a coupling path are provided wherein the peaking amplifier bias circuit is configured to provide a peaking bias signal to the peaking amplifier based on a saturation level of the carrier amplifier.

Abstract: Multi-band device having multiple miniaturized single-band power amplifiers. In some embodiments, a power amplifier die can include a semiconductor substrate, and a plurality of power amplifiers (PAs) implemented on the semiconductor substrate. Each PA can be configured to drive approximately a characteristic load impedance of a downstream component along an individual frequency band signal path, such that each PA is sized smaller than a wide band PA configured to drive more than one of the frequency bands associated with the plurality of PAs. The downstream component can include an output filter.

Abstract: Multi-band power amplification system having enhanced efficiency through elimination of band selection switch. In some embodiments, a power amplification system can include a plurality of power amplifiers (PAs), with each PA being configured to receive and amplify a radio-frequency (RF) signal in a frequency band. The power amplification system can further include an output filter coupled to each of the PAs by a separate output path such that the power amplification system is substantially free of a band selection switch between the plurality of PAs and their corresponding output filters. Each PA can be further configured to drive approximately a characteristic load impedance of the corresponding output filter by, for example, the PA being operated with a high-voltage (HV) supply.

Abstract: Power amplification system with variable supply voltage. A power amplification system can include a power amplifier and a boost converter configured to provide a supply voltage to the power amplifier. The power amplification system can include a control system configured to provide a boost converter control signal to the boost converter to adjust the supply voltage based on a parameter associated with the power amplifier.

Abstract: Enhanced power amplifier efficiency through elimination of matching network. In some embodiments, a power amplification system can include a power amplifier (PA) configured to receive and amplify a radio-frequency (RF) signal, and an output filter coupled to the PA by an output path that is substantially free of an impedance transformation circuit. The PA can be further configured to drive approximately a characteristic load impedance of the output filter. The PA being configured to drive approximately the characteristic load impedance of the output filter can be effectuated by the PA being operated with a high-voltage (HV) supply.

Abstract: Reduced power amplifier size through elimination of matching network. In some embodiments, a power amplification system can include a power amplifier (PA) configured to receive and amplify a radio-frequency (RF) signal. The power amplification system can further include a filter coupled to the PA and configured to condition the amplified RF signal. The PA can be further configured to drive approximately a characteristic load impedance of the filter. Such a configuration of the PA can be achieved by operating the PA with a high-voltage supply. Such a power amplification system can allow elimination of a matching network to, for example, reduce loss and device size.

Abstract: Radio-frequency (RF) power amplifiers driven by boost converter. In some embodiments, a power amplification system can include a supply system configured to provide a high-voltage (HV) supply signal based on a battery voltage, and a power amplifier (PA) configured to receive the HV supply signal and amplify an RF signal. The power amplification system can further include an output path configured to route the amplified RF signal to a filter. Such an output path can be substantially free of either or both of an impedance transformation circuit and a band selection switch.

Abstract: According to some implementation, a power amplifier includes a plurality of pairs of transistors, each pair of transistors including a common emitter transistor and a common base transistor arranged in a cascode configuration. The power amplifier further includes electrical connections implemented to connect the plurality of pairs in a parallel configuration between an input node and an output node. According to some implementations, the electrical connections are configured to distribute a collector current to all of the common base transistors to thereby reduce likelihood of damage to one or more common base transistors during a thermal run-away event.

Abstract: Power amplification system with shared common base biasing. A power amplification system can include a plurality of cascode amplifier sections. Each one of the plurality of cascode amplifier sections can include including a first transistor and a second transistor. The power amplification system can include a plurality of common emitter biasing components. Each one of the plurality of common emitter biasing components can be coupled to a base of the first transistor of a respective one of the plurality of cascode amplifier sections and can be controllable to bias the first transistor of the respective one of the plurality of cascode amplifier sections. The power amplification system can include a common base biasing component coupled to a base of the second transistor of each of the plurality of cascode amplifier sections and controllable to bias the second transistor of each of the plurality of cascode amplifier sections.

Abstract: Power amplification system with adjustable common base bias. A power amplification system can include a first transistor having a base coupled to a radio-frequency input. The power amplification can further include a second transistor having an emitter coupled to a collector of the first transistor and having a collector coupled to a radio-frequency output. The power amplification system can include a biasing component configured to apply a fixed biasing signal to the base of the first transistor and to apply an adjustable biasing signal to the base of the second transistor.

Abstract: According to some implementations, a radio-frequency (RF) device includes a communication interface coupled to a serial bus. The RF device also includes a monitoring component coupled to the communication interface, the monitoring component configured to monitor the serial bus for first data transmitted to a first device coupled to the serial bus and configure the RF device based on the first data.

Abstract: According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.

Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

Abstract: Compression control through amplitude adjustment of a radio frequency input signal. A power amplifier module can include a power amplifier. The power amplifier can include a cascode transistor pair. The cascode transistor pair can include a first transistor and a second transistor. The power amplifier module can include a power amplifier bias controller. The power amplifier bias controller can include a current comparator, a saturation controller, and a radio frequency (RF) attenuator. The current comparator can be configured to compare a first base current of the first transistor and a second base current of the second transistor to obtain a comparison value. The saturation controller can be configured to supply a reference signal to the RF attenuator based on the comparison value. The RF attenuator can be configured to modify the amplitude of an RF input signal supplied to the power amplifier based at least in part on the reference signal.

Abstract: Compression control through power amplifier load adjustment. A power amplifier module can include a power amplifier including a cascode transistor pair. The cascode transistor pair can include a first transistor and a second transistor. The power amplifier module can include a power amplifier bias controller including a current comparator configured to compare a first base current of the first transistor and a second base current of the second transistor to obtain a comparison value. The power amplifier module can include a saturation controller configured to supply a reference signal to an impedance matching network based on the comparison value. The impedance matching network can be configured to modify a load impedance of a load line in electrical communication with the power amplifier based at least in part on the reference signal.

Abstract: Compression control through power amplifier voltage adjustment. A power amplifier module can include a power amplifier including a cascode transistor pair. The cascode transistor pair can include a first transistor and a second transistor. The power amplifier module can include a power amplifier bias controller. The power amplifier bias controller can include a current comparator configured to compare a first base current of the first transistor and a second base current of the second transistor to obtain a comparison value. The power amplifier module can include a saturation controller configured to supply a reference signal to a voltage converter based on the comparison value. The voltage converter can be configured to modify a supply voltage provided to the power amplifier based at least in part on the reference signal.

Abstract: Antenna switch modules and methods of making the same are provided. In one implementation, an antenna switch module includes a first transmit and first receive port that are respectively connected to at least one antenna series switches. The first receive and transmit port receive and transmit signals on a first frequency. In one implementation, a second transmit and second receive port are connected to the at least one antenna and transmit and receive signals on a second frequency. In this implementation, the second receive port is connected to the at least one antenna via a series switch but the second transmit port is connected to the at least one antenna via a inductive resonance circuit that provides impedance to isolate the second transmit port when the first transmit port or receive port is transmitting or receiving via the at least one antenna.

Abstract: An RF amplifier module that has a plurality of amplifiers wherein at least one of the amplifiers is powered via an envelope tracking module. The biasing input of at least one of the amplifiers is provided to the first amplifier to power the first amplifier to reduce power consumption. The first amplifier may also be powered via fixed biasing to provide greater stability of the module.