Abstract: Antenna switch modules and methods of making the same are provided. In one implementation, an antenna switch module includes a first transmit and first receive port that are respectively connected to at least one antenna series switches. The first receive and transmit port receive and transmit signals on a first frequency. In one implementation, a second transmit and second receive port are connected to the at least one antenna and transmit and receive signals on a second frequency. In this implementation, the second receive port is connected to the at least one antenna via a series switch but the second transmit port is connected to the at least one antenna via a inductive resonance circuit that provides impedance to isolate the second transmit port when the first transmit port or receive port is transmitting or receiving via the at least one antenna.

Abstract: A high-voltage power amplification system can include a supply circuit configured to provide a high supply voltage in an average power tracking mode. The power amplification system can further include a power amplifier configured to operate with the high supply voltage and provide an impedance that substantially matches an impedance of a component coupled to an output of the power amplifier. The power amplification system can further include a signal path configured to route an amplified signal from the output of the power amplifier to the component, with the output path being substantially free of an output matching network.

Abstract: Antenna impedance prediction via power amplifier parameter. In some embodiments, a power amplification system can include a splitter circuit and a combiner circuit, and first and second Doherty power amplifiers implemented in a quadrature configuration between the splitter circuit and the combiner circuit, with each Doherty power amplifier including a carrier amplifier and a peaking amplifier. The power amplification system can further include a monitoring circuit configured to measure at least some of base currents associated with the carrier and peaking amplifiers of the first and second Doherty power amplifiers, and generate a signal capable of adjusting a load impedance presented to an output of the combiner circuit.

Abstract: A power amplifier layout can include multiple cascoded devices each having a radio-frequency transistor coupled to a cascode transistor. An orientation of a radio-frequency transistor of a first cascoded device relative to a cascode transistor of the first cascoded device can be configured to be different than an orientation of a radio-frequency transistor of a second cascoded device relative to a cascode transistor of the second cascoded device.

Abstract: Power amplifiers having reduced loss. In some embodiments, a power amplification system can include a plurality of power amplifiers, with each power amplifier being configured to receive and amplify a signal in a frequency band. The power amplification system can further include an output filter coupled to each of the power amplifiers by a separate output path such that the power amplification system is substantially free of a band selection switch between the plurality of power amplifiers and their corresponding output filters. Each power amplifier can be further configured to operate with a high-voltage supply to provide an impedance similar to an impedance of the corresponding output filter.

Abstract: A power amplification system with shared common base biasing is disclosed. A method for power amplification at a controller of a power amplification system comprising a plurality of cascode amplifier sections can include receiving a band select signal indicative of one or more frequency bands of a radio-frequency input signal to be amplified and transmitted. The method may further include biasing a common base stage of each of the plurality of cascode amplifier sections, and biasing a common emitter stage of a subset of the plurality of cascode amplifier sections.

Abstract: The present disclosure relates to methods, modules and devices for detecting and preventing occurrence of a saturation state in a power amplifier. A method is disclosed for detecting a saturation condition of a power amplifier, including monitoring a first base current of a first transistor of a cascade transistor pair of the power amplifier and a second base current of a second transistor of the cascade transistor pair. The method can also include generating a current ratio based on comparing the first base current and the second base current. The method can further include determining if the current ratio exceeds or satisfies a threshold value and modifying one or more operating characteristics of the power amplifier in accordance with a determination that the current ratio exceeds or satisfies the threshold value.

Abstract: Wideband power combiners and splitters are provided herein. In certain embodiments, a power combiner/splitter is implemented with a first coil connecting a first port and a second port, and a second coil connecting a third port and a fourth port. The first coil and the second coil are inductively coupled to one another. For example, the first coil and the second coil can be formed using adjacent conductive layers of a semiconductor chip, an integrated passive device, or a laminate. The power combiner/splitter further includes a fifth port tapping a center of the first coil and a sixth port tapping a center of the second coil. The fifth port and the sixth port serve to connect capacitors and/or other impedance to the center of the coils to thereby provide wideband operation.

Abstract: Apparatus and methods for quadrature combined Doherty amplifiers are provided herein. In certain embodiments, a separator is used to separate a radio frequency (RF) input signal into a plurality of input signal components that are amplified by a pair of Doherty amplifiers operating in quadrature. Additionally, a combiner is used to combine a plurality of output signal components generated by the pair of Doherty amplifiers, thereby generating an RF output signal exhibiting quadrature balancing.

Abstract: Quadrature amplifier having envelope control. In some embodiments, an amplifier system can include a quadrature amplifier having first and second amplifiers configured to amplify first and second signals in quadrature relative to each other, with each of the first and second amplifiers including a cascode stage with input and output transistors arranged in a cascode configuration. The amplifier system can further include an envelope tracking bias circuit coupled to the quadrature amplifier and configured to provide a bias signal to the output transistor of the cascode stage of at least one of the first and second amplifiers.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm?3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Doherty amplifier having envelope control. In some embodiments, an amplifier system can include a Doherty amplifier having a carrier amplifier and a peaking amplifier, with each of the carrier amplifier and the peaking amplifier including a cascode stage with input and output transistors arranged in a cascode configuration. The amplifier system can further include an envelope tracking bias circuit coupled to the Doherty amplifier and configured to provide a bias signal to the output transistor of the cascode stage of the peaking amplifier.

Abstract: Amplifiers for radio-frequency applications. In some embodiments, a power amplifier die can include a semiconductor substrate and a plurality of narrow band power amplifiers implemented on the semiconductor substrate. Each narrow band power amplifier can be configured to operate with a high voltage in an average power tracking mode and be capable of being coupled to an output filter associated with a respective individual frequency band. Each narrow band power amplifier can be sized smaller than a wide band power amplifier configured to operate with more than one of the frequency bands associated with the plurality of narrow band power amplifiers.

Abstract: Radio-frequency amplification systems, devices and methods. In some embodiments, an amplification system can include a supply circuit configured to provide a high supply voltage in an average power tracking mode. The amplification system can further include an amplifier configured to operate with the high supply voltage and provide an impedance that substantially matches an impedance of a component coupled to an output of the amplifier. The amplification system can further include a signal path configured to route an amplified signal from the output of the amplifier to the component, with the output path being substantially free of an output matching network.

Abstract: Power amplification system with adjustable common base bias. A power amplification system can include a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The power amplification system can further include a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.

Abstract: Circuits, devices and methods related to power amplification without matching network. In some embodiments, a power amplification circuit can include a power amplifier configured to amplify a signal. The power amplification circuit can further include a filter coupled to the power amplifier. The power amplifier can be further configured to operate with an impedance that is approximately same as an impedance of the filter.

Abstract: Doherty power amplifier having high supply voltage. In some embodiments, a power amplification system can include a supply system configured to provide a high-voltage supply signal, and a Doherty power amplifier having an input splitter configured to receive and split a signal into a carrier amplifier and a peaking amplifier. The Doherty power amplifier can further include a combiner configured to combine amplified signals from the carrier and peaking amplifiers to provide an output signal. The Doherty power amplifier can be configured to receive the high-voltage supply signal for operation of the carrier and peaking amplifiers. The power amplification system can further include an output path configured to couple the combiner to a filter. The Doherty power amplifier can have an impedance substantially the same as an impedance of the filter when operated with the high-voltage supply signal.

Abstract: According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.

Abstract: Thermally rugged power amplifiers and related methods. In some embodiments, a method for manufacturing a radio-frequency amplifier can include providing or forming a semiconductor substrate, and forming an array of cascoded devices on the semiconductor substrate to be capable of amplifying a signal, such that the array of cascoded devices includes a plurality of cascoded devices arranged in a first row and a plurality of cascoded devices arranged in a second row. Each cascoded device can include an input stage and an output stage arranged in a cascode configuration, and each of the first and second rows can be configured such that the output stages are positioned in a staggered orientation. The staggered arrangement of the cascoded devices in the first row can be offset relative to the staggered arrangement of the cascoded devices in the second row to avoid a direct row-to-row adjacent pair of output stages.

Abstract: Multi-band power amplification system having enhanced efficiency through elimination of band selection switch. In some embodiments, a power amplification system can include a plurality of power amplifiers (PAs), with each PA being configured to receive and amplify a radio-frequency (RF) signal in a frequency band. The power amplification system can further include an output filter coupled to each of the PAs by a separate output path such that the power amplification system is substantially free of a band selection switch between the plurality of PAs and their corresponding output filters. Each PA can be further configured to drive approximately a characteristic load impedance of the corresponding output filter by, for example, the PA being operated with a high-voltage (HV) supply.