Patents by Inventor Philippe Gilet

Philippe Gilet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11264427
    Abstract: An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: March 1, 2022
    Assignee: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet, Zine Bouhamri, Pamela Rueda Fonseca
  • Publication number: 20210399166
    Abstract: A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.
    Type: Application
    Filed: November 20, 2019
    Publication date: December 23, 2021
    Inventors: Ivan-Christophe ROBIN, Xavier HUGON, Philippe GILET, Tiphaine DUPONT
  • Publication number: 20210375834
    Abstract: A method for manufacturing an electronic device including the following steps: a) forming a wafer of electronic chips; b) fixing the wafer of electronic chips to a first support made of a stretchable material; c) removing and/or etching the wafer; and d) stretching the first support so as to move the chips away from one another.
    Type: Application
    Filed: October 8, 2019
    Publication date: December 2, 2021
    Applicant: Aledia
    Inventors: Ivan-Christophe Robin, Zine Bouhamri, Philippe Gilet
  • Patent number: 11171267
    Abstract: The invention relates to a method for producing an optoelectronic device (1) including a matrix array of light-emitting diodes (4) and a plurality of photoluminescent pads (61, 62, 63 . . . ) that are each located facing at least some of said light-emitting diodes (4), including the following steps: forming said plurality of photoluminescent pads (61, 62, 63 . . . ) by photolithography from at least one photoresist (51, 52, 53 . . . ) containing photoluminescent particles, said photoresist having been deposited beforehand on a supporting surface (3; 3?); forming reflective walls (101, 102, 103 . . . ) covering lateral flanks (81, 82, 83 . . . ) of said photoluminescent pads (61, 62, 63 . . . ) by deposition of at least one thin-layer section (91, 92, 93 . . . ) on the lateral flanks.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: November 9, 2021
    Assignee: ALEDIA
    Inventors: Eric Pourquier, Philippe Gilet, Chang Ying-Lan
  • Patent number: 11164506
    Abstract: A method of controlling an optoelectronic device including display pixels arranged in rows and in columns. The optoelectronic device further includes first electrodes, each connected to the display pixels of at least one row, second electrodes, each connected to the display pixels of at least one column, and a circuit for controlling the first and second electrodes. The method includes, in a first phase, the activation of the display pixels connected to one of the first electrodes and to one of the second electrodes by the following steps, simultaneously carried out: taking one of the first electrodes to a first potential, the other first electrodes being maintained at a second potential smaller than the first potential; and taking one of the second electrodes to a third potential smaller than the second potential, the other second electrodes being maintained at a fourth potential greater than the third potential and smaller than the second potential.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: November 2, 2021
    Assignee: Aledia
    Inventors: Xavier Hugon, Philippe Gilet, Ivan-Christophe Robin, Zine Bouhamri, Frédéric Mercier, Matthieu Charbonnier
  • Patent number: 11088300
    Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: August 10, 2021
    Assignee: Aledia
    Inventors: Philippe Gibert, Philippe Gilet, Ewen Henaff, Thomas Lacave
  • Patent number: 10923528
    Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: February 16, 2021
    Assignee: Aledia
    Inventors: Tiphaine Dupont, Sylvia Scaringella, Erwan Dornel, Philippe Gibert, Philippe Gilet, Xavier Hugon, Fabienne Goutaudier
  • Patent number: 10916579
    Abstract: An optoelectronic device including light-emitting diodes (LED), each light-emitting diode including a semiconductor element corresponding to a nanowire, a microwire, and/or a nanometer- or micrometer-range pyramidal structure, and a shell at least partially covering the semiconductor element and adapted to emit a radiation and for each light-emitting diode, a photoluminescent coating including a single quantum well, multiple quantum wells or an heterostructure, covering at least part of the shell and in contact with the shell or with the semiconductor element and adapted to convert by optical pumping the radiation emitted by the shell into another radiation.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: February 9, 2021
    Assignee: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet
  • Patent number: 10916580
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: February 9, 2021
    Assignee: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Patent number: 10886427
    Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: January 5, 2021
    Assignees: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Florian Dupont, Benoit Amstatt, Vincent Beix, Thomas Lacave, Philippe Gilet, Ewen Henaff, Berangere Hyot, Hubert Bono
  • Publication number: 20200373461
    Abstract: An emitter adapted to emit a first radiation, said emitter having a substrate, and a mesa made of a first semiconductor material having a first bandgap value. The mesa has a superior side and a lateral side. A covering layer has one or several radiation-emitting layer(s) made of a second semiconductor material having a second bandgap value strictly inferior to the first bandgap value. Each radiation-emitting layer has a first portion corresponding to the superior side and a second portion corresponding to the lateral side. A first thickness is defined for the first portion and a second thickness is defined for the second portion, the second thickness being strictly inferior to the first thickness.
    Type: Application
    Filed: February 6, 2019
    Publication date: November 26, 2020
    Applicant: Aledia Parc'd Enterprises
    Inventors: Wei Sin TAN, Pamela Rueda FONSECA, Philippe GILET
  • Publication number: 20200365762
    Abstract: An optoelectronic device including: a three-dimensional semiconductor element mostly made of a first chemical element and of a second chemical element; an active area at least partially covering the lateral walls of the three-dimensional semiconductor element and including a stack of at least a first layer mostly made of the first and second chemical elements, and of at least a second layer mostly made of the first and second chemical elements and of a third chemical element; a third layer covering the active area, the third layer being mostly made of the first, second, and third chemical elements and of a fourth chemical element, the mass proportion of the third and fourth chemical elements of the third layer increasing or decreasing as the distance to the substrate increases; and a fourth layer, mostly made of the first and second chemical elements, covering the third layer.
    Type: Application
    Filed: December 6, 2018
    Publication date: November 19, 2020
    Applicant: Aledia
    Inventors: Pierre Tchoulfian, Benoît Amstatt, Philippe Gilet
  • Publication number: 20200357844
    Abstract: An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.
    Type: Application
    Filed: June 21, 2018
    Publication date: November 12, 2020
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet, Zine Bouhamri, Pamela Rueda Fonseca
  • Publication number: 20200300422
    Abstract: An optoelectronic device including comprising including including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.
    Type: Application
    Filed: December 28, 2017
    Publication date: September 24, 2020
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet
  • Patent number: 10734442
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: August 4, 2020
    Assignee: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Publication number: 20200161520
    Abstract: An optoelectronic device, including: a support; at least one first electrically-conductive layer covering the support; display pixel circuits including first and second opposite surfaces bonded to the first electrically-conductive layer, each display pixel circuit including an electronic circuit including the first surface and a third surface opposite to the first surface, the first surface being bonded to the first electrically-conductive layer, and at least one optoelectronic circuit bonded to the third surface and including at least one light-emitting diode, at least one of the electrodes of the light-emitting diode being connected to the electronic circuit by the third surface; at least one second electrically-conductive layer covering the display pixel circuits and electrically coupled to the electronic circuits of the display pixel circuits on the side of the second surface.
    Type: Application
    Filed: July 19, 2018
    Publication date: May 21, 2020
    Applicant: Aledia
    Inventors: Xavier Hugon, Philippe Gilet, Ivan-Christophe Robin, Zine Bouhamri, Frédéric Mercier, Matthieu Charbonnier
  • Publication number: 20200161285
    Abstract: An optoelectronic device including: a first circuit including a substrate having first and second opposite faces, the first circuit having display pixels, each display pixel having, on the side of the first face, a first light-emitting diode having a first active region adapted to emit a first radiation and, extending from the second face, a second light-emitting diode having a second active region adapted to emit a second radiation, the surface area, viewed from a direction orthogonal to the first face, of the first active region being at least twice as big as the surface area, viewed from the direction, of the second active region; and a second circuit bonded to the first circuit on the side of the first light-emitting diode and electrically linked to the first and second light-emitting diodes.
    Type: Application
    Filed: June 21, 2018
    Publication date: May 21, 2020
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet, Eric Pourquier, Zine Bouhamri, Pamela Rueda Fonseca
  • Publication number: 20200152113
    Abstract: A method of controlling an optoelectronic device including display pixels arranged in rows and in columns. The optoelectronic device further includes first electrodes, each connected to the display pixels of at least one row, second electrodes, each connected to the display pixels of at least one column, and a circuit for controlling the first and second electrodes. The method includes, in a first phase, the activation of the display pixels connected to one of the first electrodes and to one of the second electrodes by the following steps, simultaneously carried out: taking one of the first electrodes to a first potential, the other first electrodes being maintained at a second potential smaller than the first potential; and taking one of the second electrodes to a third potential smaller than the second potential, the other second electrodes being maintained at a fourth potential greater than the third potential and smaller than the second potential.
    Type: Application
    Filed: July 19, 2018
    Publication date: May 14, 2020
    Applicant: Aledia
    Inventors: Xavier Hugon, Philippe Gilet, Ivan-Christophe Robin, Zine Bouhamri, Frédéric Mercier, Matthieu Charbonnier
  • Publication number: 20200119231
    Abstract: An optoelectronic device including: a support; blocks of a semiconductor material, resting on the support and each including a first surface on the side opposite to the support and lateral walls; a nucleation layer on each first surface; a first insulating layer covering each nucleation layer and including an opening exposing a portion of the nucleation layer; a semiconductor element resting on each first insulating layer and in contact with the nucleation layer covered with the first insulating layer in the opening; a shell covering each semiconductor element and including an active layer capable of emitting or absorbing an electromagnetic radiation; and a first conductive layer, reflecting the radiation, extending between the semiconductor elements and extending over at least a portion of the lateral walls of the blocks.
    Type: Application
    Filed: June 19, 2018
    Publication date: April 16, 2020
    Applicant: Aledia
    Inventors: Philippe Gibert, Philippe Gilet, Ewen Henaff, Thomas Lacave
  • Publication number: 20190334064
    Abstract: The invention relates to a method for producing an optoelectronic device (1) including a matrix array of light-emitting diodes (4) and a plurality of photoluminescent pads (61, 62, 63 . . . ) that are each located facing at least some of said light-emitting diodes (4), including the following steps: forming said plurality of photoluminescent pads (61, 62, 63 . . . ) by photolithography from at least one photoresist (51, 52, 53 . . . ) containing photoluminescent particles, said photoresist having been deposited beforehand on a supporting surface (3; 3?); forming reflective walls (101, 102, 103 . . . ) covering lateral flanks (81, 82, 83 . . . ) of said photoluminescent pads (61, 62, 63 . . . ) by deposition of at least one thin-layer section (91, 92, 93 . . . ) on the lateral flanks.
    Type: Application
    Filed: December 22, 2017
    Publication date: October 31, 2019
    Inventors: Eric POURQUIER, Philippe GILET, Chang YING-LAN