Patents by Inventor Phillip D. Hustad

Phillip D. Hustad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160186004
    Abstract: Disclosed herein is a method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a reactive moiety that is operative to react with a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition.
    Type: Application
    Filed: November 18, 2015
    Publication date: June 30, 2016
    Inventors: Phillip D. Hustad, Peter Trefonas, III, Shih-Wei Chang
  • Publication number: 20160186002
    Abstract: Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer comprising a polymer wherein the surface tension of the polymer with the first polymer and the surface tension of the polymer with the second polymer are both lower than the surface tension between the first polymer and second polymer; where the additive polymer comprises a reactive functional moiety that forms a bond or a complex or a coordinate with the substrate upon being disposed on the substrate; where the reactive functional moiety is unreacted when it is a part of the composition; and a solvent.
    Type: Application
    Filed: November 18, 2015
    Publication date: June 30, 2016
    Inventors: Phillip D. Hustad, Jieqian Zhang, Peter Trefonas, III
  • Publication number: 20160187782
    Abstract: Provided are photolithographic methods.
    Type: Application
    Filed: December 16, 2015
    Publication date: June 30, 2016
    Inventors: Phillip D. Hustad, Jong Keun Park
  • Publication number: 20160186001
    Abstract: Disclosed herein is a pattern forming method comprising providing a substrate devoid of a layer of a brush polymer; disposing upon the substrate a composition comprising a block copolymer comprising a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other; an additive polymer comprising a reactive functional moiety that forms a bond with or a complex or a coordinate with the substrate upon being disposed on the substrate; and a solvent; and annealing the composition to facilitate bonding or complexation or coordination of the additive polymer to the substrate and domain separation between the first polymer and the second polymer of the block copolymer to form a morphology of periodic domains formed from the first polymer and the second polymer.
    Type: Application
    Filed: November 18, 2015
    Publication date: June 30, 2016
    Inventors: Phillip D. Hustad, Jieqian Zhang, Peter Trefonas, III
  • Publication number: 20160189953
    Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.
    Type: Application
    Filed: December 17, 2015
    Publication date: June 30, 2016
    Inventors: Jong Keun Park, Phillip D. Hustad, Emad Aqad, Mingqi Li, Cheng-Bai Xu, Peter Trefonas, III, James W. Thackeray
  • Publication number: 20160186003
    Abstract: Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; and an additive polymer; where the additive polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers.
    Type: Application
    Filed: November 18, 2015
    Publication date: June 30, 2016
    Inventors: Phillip D. Hustad, Peter Trefonas, III, Shih-Wei Chang
  • Publication number: 20160185984
    Abstract: A composition comprising a polymer and a solvent, wherein the polymer comprises: a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and an endcapping group that is free of polymerizable vinyl groups and hydroxyl groups. The compositions find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.
    Type: Application
    Filed: December 17, 2015
    Publication date: June 30, 2016
    Inventors: Emad Aqad, Jong Keun Park, Phillip D. Hustad, Mingqi Li, Cheng-Bai Xu, Peter Trefonas, III, James W. Thackeray
  • Publication number: 20160062232
    Abstract: Multiple-pattern forming methods are provided.
    Type: Application
    Filed: August 26, 2015
    Publication date: March 3, 2016
    Inventors: Chang-Young Hong, Cheng-Bai Xu, Jung Woo Kim, Cong Liu, Shintaro Yamada, Lori Anne Joesten, Choong-Bong Lee, Phillip D. Hustad, James C. Taylor
  • Publication number: 20160033869
    Abstract: Pattern shrink methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) providing a resist pattern over the one or more layers to be patterned; (c) coating a shrink composition over the pattern, wherein the shrink composition comprises a polymer and an organic solvent, wherein the polymer comprises a group containing a hydrogen acceptor effective to form a bond with an acid group and/or an alcohol group at a surface of the resist pattern, and wherein the composition is free of crosslinkers; and (d) rinsing residual shrink composition from the substrate, leaving a portion of the polymer bonded to the resist pattern. Also provided are pattern shrink compositions, and coated substrates and electronic devices formed by the methods. The invention find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
    Type: Application
    Filed: May 29, 2015
    Publication date: February 4, 2016
    Inventors: Phillip D. HUSTAD, Jong Keun PARK, Jin Wuk SUNG, James Heejun PARK
  • Patent number: 9243090
    Abstract: A composition for use in forming a multi-block copolymer, said copolymer containing therein two or more segments or blocks differing in chemical or physical properties, a polymerization process using the same, and the resulting polymers, wherein the composition comprises the admixture or reaction product resulting from combining: (A) a first metal complex olefin polymerization catalyst, (B) a second metal complex olefin polymerization catalyst capable of preparing polymers differing in chemical or physical properties from the polymer prepared by catalyst (A) under equivalent polymerization conditions, and (C) a chain shuttling agent.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: January 26, 2016
    Assignee: Dow Global Technologies LLC
    Inventors: Daniel J. Arriola, Edmund M. Carnahan, Yunwa Wilson Cheung, David D. Devore, David D. Graf, Phillip D. Hustad, Roger L. Kuhlman, Colin Li Pi Shan, Benjamin C. Poon, Gordon R. Roof, James C. Stevens, Pamela J. Stirn, Timothy T. Wenzel
  • Publication number: 20150376454
    Abstract: Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.
    Type: Application
    Filed: June 22, 2015
    Publication date: December 31, 2015
    Inventors: Jieqian Zhang, Phillip D. Hustad, Peter Trefonas, III, Mingqi Li, Valeriy V. Ginzburg, Jeffrey D. Weinhold
  • Publication number: 20150376408
    Abstract: Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate.
    Type: Application
    Filed: June 22, 2015
    Publication date: December 31, 2015
    Inventors: Jieqian Zhang, Phillip D. Hustad, Peter Trefonas, III, Mingqi Li, Valeriy V. Ginzburg, Jeffrey D. Weinhold
  • Patent number: 9209067
    Abstract: Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: December 8, 2015
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Jong Keun Park, Cheng-Bai Xu, Phillip D. Hustad, Mingqi Li
  • Publication number: 20150348828
    Abstract: Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group i
    Type: Application
    Filed: December 23, 2014
    Publication date: December 3, 2015
    Inventors: Jae Hwan SIM, Jin Hong PARK, Jae-Bong LIM, Jung Kyu JO, Cheng-Bai XU, Jong Keun PARK, Mingqi LI, Phillip D. HUSTAD
  • Publication number: 20150287592
    Abstract: A method of forming a pattern by directed self-assembly, comprising: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) applying a crosslinkable underlayer composition over the one or more layers to be patterned to form a crosslinkable underlayer, wherein the crosslinkable underlayer composition comprises a crosslinkable polymer comprising a first unit of the following general formula (I-A) or (I-B): wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X1 is a monovalent electron donating group; X2 is a divalent electron donating group; Ar1 and Ar2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon atoms on the same aromatic ring of Ar1 or Ar2; m and n are each an integer of 1 or more; and each R1 is independently a monovalent group; (c) heating the crosslinkable underlayer to form a crosslinked underlayer; (d) forming a self-assembling layer compr
    Type: Application
    Filed: December 31, 2014
    Publication date: October 8, 2015
    Inventors: Jong Keun Park, Jibin Sun, Christopher D. Gilmore, Jieqian Zhang, Phillip D. Hustad, Peter Trefonas, III, Kathleen M. O'Connell
  • Publication number: 20150267032
    Abstract: A composition comprising a phase separated block copolymer and an inorganic dielectric nanoparticle, wherein the nanoparticle is dispersed in the copolymer and is present primarily in one phase. For example, a Ti02 nanocomposite can be created via the in situ formation of Ti02 within a silane-grafted OBC. Taking advantage of the phase morphology of the OBC and the differential swelling of the hard and soft segments, due to their inherent crystallinity, enables the selective incorporation of Ti02 nanoparticles into the soft segments of the OBC.
    Type: Application
    Filed: October 14, 2013
    Publication date: September 24, 2015
    Inventors: Phillip D. Hustad, Stephanie L. Potisek, Rebekah K. Feist, James C. Stevens, Michael E. Mills, Yuanqiao Rao, Eddy I. Garcia-Meitin
  • Publication number: 20150210793
    Abstract: A crosslinkable polymer comprising: a first unit of the following general formula (I-A) or (I-B): wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X1 is a monovalent electron donating group; X2 is a divalent electron donating group; Ar1 and Ar2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon atoms on the same aromatic ring of Ar1 or Ar2; m and n are each an integer of 1 or more; and each R1 is independently a monovalent group; and a second unit chosen from general formulae (III) and (IV): wherein R7 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl, R8 is chosen from optionally substituted C1 to C10 alkyl, and Ar3 is an optionally substituted aryl group. Underlayer compositions comprise the crosslinkable polymer and a solvent.
    Type: Application
    Filed: December 31, 2014
    Publication date: July 30, 2015
    Inventors: Jong Keun PARK, Jibin SUN, Christopher D. GILMORE, Jieqian ZHANG, Phillip D. HUSTAD, Peter TREFONAS, III, Kathleen M. O'Connell
  • Publication number: 20150183935
    Abstract: Disclosed herein is a block copolymer comprising a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution on an aromatic ring; a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and the second block is 0.03 to 0.18 at a temperature of 200° C. Disclosed herein is a method comprising polymerizing a vinyl aromatic monomer to form a first block; and polymerizing a second block onto the first block to form a block copolymer; where the second block is derived by polymerizing a siloxane monomer; and where the block copolymer has a chi parameter of 0.03 to 0.18 at a temperature of 200° C.; where the chi parameter is a measure of interactions between the first block and the second block of the copolymer.
    Type: Application
    Filed: December 23, 2014
    Publication date: July 2, 2015
    Inventors: Shih-Wei CHANG, Jong Keun PARK, John W. KRAMER, Erin B. VOGEL, Phillip D. HUSTAD, Peter TREFONAS, III
  • Publication number: 20150184024
    Abstract: Disclosed herein is a composition comprising a brush polymer; where the brush polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and a block copolymer; where the block copolymer comprises a first block and a second block that are covalently bonded to each other; where the first block comprises a first polymer and a second block comprises a second polymer; where the first polymer comprises less than or equal to 10 atomic percent polysiloxane; where the second polymer comprises at least 15 atomic percent polysiloxane; where the brush polymer is chemically different from the first polymer and the second polymer; and where the first polymer is chemically different from the second polymer; and wherein the block copolymer is disposed upon the brush polymer.
    Type: Application
    Filed: December 23, 2014
    Publication date: July 2, 2015
    Inventors: Shih-Wei CHANG, Jong Keun PARK, John W. KRAMER, Erin B. VOGEL, Phillip D. HUSTAD, Peter TREFONAS, III
  • Publication number: 20150184017
    Abstract: Disclosed herein is a method comprising disposing a mat composition on a surface of a semiconductor substrate; where the mat composition comprises a random copolymer comprising a first acrylate unit and a second unit; where the copolymer does not comprise a polystyrene or a polyepoxide; crosslinking the random copolymer; disposing a brush backfill composition on the substrate; such that the brush backfill composition and the mat composition alternate with each other; disposing on the brush backfill composition and on the mat composition a block copolymer that undergoes self assembly; and etching the block copolymer to create uniformly spaced channels in the semiconductor substrate.
    Type: Application
    Filed: December 23, 2014
    Publication date: July 2, 2015
    Inventors: Phillip D. HUSTAD, Peter TREFONAS, III, Jong Keun PARK