Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

Abstract: An apparatus of a semiconductor is provided wherein the apparatus comprises a substrate, a stack, and a fin. The substrate supports the stack and the substrate comprises a first material. The stack provides for the fin and the stack comprises: a strain induced in the stack via the substrate; the first material and a second material; and a plurality of concentrations of the second material with respect to the first material. The fin provides a source and a drain of a field effect transistor.

Abstract: A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement.

Abstract: A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (RTA) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure.

Abstract: An insulation wall separating transistors formed in a thin semiconductor layer resting on an insulating layer laid on a semiconductor substrate, this wall being formed of an insulating material and comprising a wall crossing the thin layer and the insulating layer and penetrating into the substrate, and lateral extensions extending in the substrate under the insulating layer.

Abstract: A MOS transistor includes an etch stop layer presenting a density of less than a determined threshold value, below which the material of said stop layer is permeable to molecules of dihydrogen and/or water. The material may comprise a nitride. A material used for the etch stop layer preferably has a density value of less than about 2.4 g/cm3.

Abstract: A modular container for aeroponic and/or hydroponic cultivation of plants comprising vertical columns of cultivating compartments for cultivating plants A vertical nutrient conduit for delivers a nutrient solution to the cultivating compartments. A vertical water conduit is in communication with the cultivating compartment. Mounting elements provide for mounting the container on a vertical support. When at least two like containers are vertically mounted on a vertical support with one container adjacently above another the respective nutrient and water conduits of the like containers are in fluid communication.

Abstract: According to the invention, two simultaneous images with different wavelengths (?1, ?2) are formed in synchronism with each illuminance laser pulse, one of the Images corresponding to the wavelength (?1) of the laser pulses, and the difference between the two images is generated.

Abstract: The invention comprises illuminating a scene where said magnifying optical system (OP) may occur with at least a first and a second pulses respectively generated by first and second laser transmitters (E1, E2). The first laser transmitter (E1) and a detector of the scene thus illuminated (D) are adjacent, while the second laser transmitter (E2) is remote from said detector (D) transversally to the direction (d) of said scene.

Abstract: The invention comprises illuminating a scene where said magnifying optical system (OP) may occur with at least one pulse generated by first laser transmitter (E). The laser transmitter (E) and a first detector of the scene thus illuminated (D1) are adjacent, while a second detector (D2) is remote from said transmitter (E) transversally to the direction (d) of said scene.

Abstract: According to the invention, two simultaneous images with different wavelengths (?1, ?2) are formed in synchronism with each illuminance laser pulse, one of the Images corresponding to the wavelength (?1) of the laser pulses, and the difference between the two images is generated.

Abstract: A semiconductor device includes at least one MOS transistor, each transistor being provided with a source region and a drain region formed in a semiconductor substrate, along with a gate region and spacers. The transistor is covered with a unitary etch stop layer that includes at least a first zone having a first residual stress level (in tension) covering at least one part of the transistor and at least a second zone having a second residual stress level (in compression) covering at least another part of the device. With this configuration, the first residual stress level is higher than the second residual stress level.

Abstract: A MOS transistor includes an etch stop layer presenting a density of less than a determined threshold value, below which the material of said stop layer is permeable to molecules of dihydrogen and/or water. The material may comprise a nitride. A material used for the etch stop layer preferably has a density value of less than about 2.4 g/cm3.

Abstract: A semiconductor device includes at least one MOS transistor, each transistor being provided with a source region and a drain region formed in a semiconductor substrate, along with a gate region and spacers. The transistor is covered with a unitary etch stop layer that includes at least a first zone having a first residual stress level (in tension) covering at least one part of the transistor and at least a second zone having a second residual stress level (in compression) covering at least another part of the device. With this configuration, the first residual stress level is higher than the second residual stress level.

Abstract: A semiconductor device includes a substrate, MOS transistors in the substrate, and a dielectric layer on the MOS transistors. Contact holes are formed through the dielectric layer to provide electrical connection to the MOS transistors. An etch-stop layer is between the MOS transistors and the dielectric layer. The etch-stop layer includes a first layer of material having a first residual stress level and covers some of the MOS transistors, and a second layer of material having a second residual stress level and covers all of the MOS transistors. The respective thickness of the first and second layers of material, and the first and second residual stress levels associated therewith are selected to obtain variations in operating parameters of the MOS transistors.

Abstract: A modular container for aeroponic and/or hydroponic cultivation of plants comprising vertical columns of cultivating compartments for cultivating plants A vertical nutrient conduit for delivers a nutrient solution to the cultivating compartments. A vertical water conduit is in communication with the cultivating compartment. Mounting elements provide for mounting the container on a vertical support. When at least two like containers are vertically mounted on a vertical support with one container adjacently above another the respective nutrient and water conduits of the like containers are in fluid communication.

Abstract: A semiconductor device includes a substrate, MOS transistors in the substrate, and a dielectric layer on the MOS transistors. Contact holes are formed through the dielectric layer to provide electrical connection to the MOS transistors. An etch-stop layer is between the MOS transistors and the dielectric layer. The etch-stop layer includes a first layer of material having a first residual stress level and covers some of the MOS transistors, and a second layer of material having a second residual stress level and covers all of the MOS transistors. The respective thickness of the first and second layers of material, and the first and second residual stress levels associated therewith are selected to obtain variations in operating parameters of the MOS transistors.

Abstract: A floating track device for releasable attachment to a drive mechanism of an existing vehicle for supporting, floating, moving and steering the vehicle on a traveling surface includes an endless belt member to weight support the vehicle on the traveling surface. The endless belt member includes a belt endless inner layer spaced from a belt endless outer layer so as to define a plurality of inner and outer surface sections there along. The inner and cuter surface sections form generally elongated floating members positioned adjacent relative to each other and forming housings in which buoyant bodies are disposed. Each outer surface section forms an external corrugation of the endless belt member for traction. Each inner surface section includes an internal corrugation for releasable driving engagement with the vehicle drive mechanism. Holding rods, separating two adjacent floating members, hold and secure the complementary inner and outer surface sections to each other.

Abstract: A floating track device for releasably attaching to a drive mechanism of a vehicle for supporting, floating, moving and steering the same on a traveling surface which may be a ground, snow, water, marsh, ice and the like. The device includes a plurality of generally elongated floating members adjacently releasably secured to each other via respective securing members to form at least one endless belt member, and a retaining member for releasably linking the belt member to the drive mechanism, each of the plurality of floating members transverse to the belt member and has an inner surface and an outer surface, the latter forming an external corrugation of the belt member for traction on any different traveling surface, especially on water by pushing on the same. The belt member to adapted to weight support the powered vehicle on the traveling surface.