Abstract: Provided is an assembly for inspecting the surface of a sample. The assembly includes two or more multi-beam electron column units. Each unit has: a single thermal field emitter for emitting a diverging electron beam towards a beam splitter; wherein the beam splitter includes a first multi-aperture plate having multiple apertures for creating multiple primary electron beams; a collimator lens for collimating the diverging electron beam from the emitter; an objective lens unit for focusing said multiple primary electron beams on said sample; and a multi-sensor detector system for separately detecting the intensity of secondary electron beams created by each one of said focused primary electron beams on said sample. The two or more multi-beam electron column units are arranged adjacent to each other for inspecting different parts of the surface of the sample at the same time.

Abstract: Disclosed is a device for, in combination with a stop having an aperture, generating charged particle beam pulses, an apparatus for inspecting a surface of a sample, and a method for inspecting a surface of a sample. The device includes a deflection unit which is arranged for positioning in or along a trajectory of a charged particle beam. The deflection unit is arranged for generating an electric field for deflecting said charged particle beam over the stop and across the aperture. The device also includes an electrical driving circuit for providing a periodic signal. The electrical driving circuit is connected to the manipulation unit via a photoconductive switch, wherein the photoconductive switch is arranged for: substantially insulating the deflection unit from the electrical driving circuit, and for conductively connecting the deflection unit to the electrical driving circuit only when said photoconductive switch is illuminated by a light beam.

Abstract: The invention provides a method of determining a measure of a density of markers in a sample, and an apparatus arranged for performing said method. In particular said method comprising the steps of: irradiating an illumination region of the sample with light, wherein the markers present in the illumination region of the sample emit fluorescence light in response to the irradiation with light, detecting an intensity of the fluorescence light from a detection region of the sample, comprising at least a part of said the illumination region, irradiating an area within said detection region of the sample with a focused charged particle beam to deposit a dose of charged particles in said area, and determining a measure of the density of markers in said area using a change of the detected intensity of the fluorescence light as a function of the deposited dose of charged particles in said area.

Abstract: A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

Abstract: A method for inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device having an optical axis. The method includes generating a primary charged particle beam; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; and correcting a field curvature of the charged particle beam device with a first and a second field curvature correction electrode. The method further includes applying a voltage to the first and to the second field curvature correction electrode. At least one of the field strength provided by the first and the second field curvature correction electrode varies in a plane perpendicular to the optical axis of the charged particle beam device. The method further includes focusing the primary charged particle beamlets on separate locations on the specimen with an objective lens.

Abstract: Provided is an assembly for inspecting the surface of a sample. The assembly includes two or more multi-beam electron column units. Each unit has: a single thermal field emitter for emitting a diverging electron beam towards a beam splitter; wherein the beam splitter includes a first multi-aperture plate having multiple apertures for creating multiple primary electron beams; a collimator lens for collimating the diverging electron beam from the emitter; an objective lens unit for focusing said multiple primary electron beams on said sample; and a multi-sensor detector system for separately detecting the intensity of secondary electron beams created by each one of said focused primary electron beams on said sample. The two or more multi-beam electron column units are arranged adjacent to each other for inspecting different parts of the surface of the sample at the same time.

Abstract: The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

Abstract: An apparatus for inspecting a sample, is equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa. The apparatus is accommodated with a processing unit adapted and equipped to represent an image as generated with the column and an image as generated with the microscope. The unit is further adapted to perform an alignment procedure mutually correlating a region of interest in one of the images, wherein the alignment procedure involves detecting a change in the optical image as caused by the charged particle beam.

Abstract: The invention relates to an apparatus for inspecting a surface of a sample, wherein the apparatus comprises: at least one charged particle source for generating an array of primary charged particle beams, a condenser lens for directing all charged particle beams to a common cross-over, a lens system for directing the primary charged particle beams from the common cross-over towards the sample surface and for focusing all primary charged particle beams into an array of individual spots on the sample surface, and a position sensitive secondary electron detector positioned at least substantially in or near a plane comprising said common cross-over.

Abstract: The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer of stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (PCap) arises.

Abstract: An apparatus for inspecting a sample includes a sample holder for holding the sample; a multi beam charged particle generator for generating an array of primary charged particle beams; an electro-magnetic lens system for directing the array of primary charged particle beams into an array of separate focused primary charged particle beams on the sample; a multi-pixel photon detector arranged for detecting photons created by the focused primary charged particle beams when the primary charged particle beams impinge on the sample or after transmission of said primary charged particle beams through the sample; and an optical assembly for conveying photons created by at least two adjacent focused primary charged particle beams of the array of separate focused primary charged particle beams to distinct and/or separate pixels or to distinct and/or separate groups of pixels of the multi-pixel photon detector.

Abstract: The invention relates to a lithography system, for example for projecting an image or an image pattern on to a target (1) such as a wafer, said target being included in said system by means of a target table (2), clamping means being present for clamping said target on said table. Said clamping means comprises a layer or stationary liquid (3), included at such thickness between target and target table that, provided the material of the liquid (C) and of the respective contacting faces (A, B) of the target (1) and target table (2), a pressure drop (PCap) arises.

Abstract: The invention relates to a method and a device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets in a charged particle multi-beamlet apparatus. The manipulator device comprises a planar substrate comprising an array of through openings in the plane of the substrate, each of these through openings is arranged for passing the at least one charged particle beamlet there through, wherein each of the through openings is provided with one or more electrodes arranged around the through opening, and a electronic control circuit for providing control signals to the one or more electrodes of each through opening, wherein the electronic control circuit is arranged for providing the one or more electrodes of each individual through opening with an at least substantially analog adjustable voltage.

Abstract: The invention provides a method of determining a measure of a density of markers in a sample, and an apparatus arranged for performing said method. In particular said method comprising the steps of: irradiating an illumination region of the sample with light, wherein the markers present in the illumination region of the sample emit fluorescence light in response to the irradiation with light, detecting an intensity of the fluorescence light from a detection region of the sample, comprising at least a part of said the illumination region, irradiating an area within said detection region of the sample with a focused charged particle beam to deposit a dose of charged particles in said area, and determining a measure of the density of markers in said area using a change of the detected intensity of the fluorescence light as a function of the deposited dose of charged particles in said area.

Abstract: The invention relates to an arrangement for transporting radicals. An electron beam system is presented comprising a beamlet generator; a beamlet manipulator (204) comprising an array of apertures; a plasma generator comprising a chamber for forming a plasma, an inlet receiving input gas and outlets removing plasma or radicals created therein, the plasma generator further comprising outlets in flow connection with the plasma chamber outlets; and a hollow guiding body (309b) guiding radicals formed in the plasma towards the array of apertures for removing contaminant deposition. The hollow guiding body (309b) is removably connectable to an extended portion (307b) of the plasma generator outlet. A cover (400) can be placed over a connection between the hollow guiding body (309b) and the extended portion (307b). The extended portion (307b) of the plasma generator outlet and the hollow guiding body (309b) can be similarly formed as a slit.

Abstract: The invention relates to an apparatus and method for inspecting a sample. The apparatus comprises a generator for generating an array of primary charged particle beams (33), and a charged particle optical system with an optical axis (38). The optical system comprises a first lens system (37, 310) for focusing all primary beams (33) into a first array of spots in an intermediate plane, and a second lens system (313, 314) for focusing all primary beams (33) into a second array of spots on the sample surface (315). The apparatus comprises a position sensitive backscattered charged particle detector (311) positioned at or near the intermediate plane. The second lens system comprises an electromagnetic or electrostatic lens which is common for all charged particle beams. Preferably the second lens system comprises a magnetic lens for rotating the array of primary beams (33) around the optical axis (38) to position the second array of charged particle spots with respect to the first array at an angle.

Abstract: The present invention relates to a method for mutually aligning a scanning electron microscope SEM and a light microscope LM by creating a change (61) in the detected light signal of the light microscope LM by illuminating a substrate with an electron beam, correlating the position of the electron beam in the coordinate system of the scanning electron microscope SEM to the position of the observed change in the detected light signal in the coordinate system of the light microscope LM, and relatively shifting the scanning electron microscope SEM and the light microscope LM with respect to one another to a desired relative position of the coordinate systems (60, 62).

Abstract: A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Abstract: The invention relates to an arrangement for transporting radicals. An electron beam system is presented comprising a beamlet generator; a beamlet manipulator (204) comprising an array of apertures; a plasma generator comprising a chamber for forming a plasma, an inlet receiving input gas and outlets removing plasma or radicals created therein, the plasma generator further comprising outlets in flow connection with the plasma chamber outlets; and a hollow guiding body (309b) guiding radicals formed in the plasma towards the array of apertures for removing contaminant deposition. The hollow guiding body (309b) is removably connectable to an extended portion (307b) of the plasma generator outlet. A cover (400) can be placed over a connection between the hollow guiding body (309b) and the extended portion (307b). The extended portion (307b) of the plasma generator outlet and the hollow guiding body (309b) can be similarly formed as a slit.

Abstract: The invention relates to an apparatus and method for inspecting a sample. The apparatus comprises a generator for generating an array of primary charged particle beams (33), and a charged particle optical system with an optical axis (38). The optical system comprises a first lens system (37, 310) for focusing all primary beams (33) into a first array of spots in an intermediate plane, and a second lens system (313, 314) for focusing all primary beams (33) into a second array of spots on the sample surface (315). The apparatus comprises a position sensitive backscattered charged particle detector (311) positioned at or near the intermediate plane. The second lens system comprises an electromagnetic or electrostatic lens which is common for all charged particle beams. Preferably the second lens system comprises a magnetic lens for rotating the array of primary beams (33) around the optical axis (38) to position the second array of charged particle spots with respect to the first array at an angle.