Abstract: The invention relates to an electrostatic beam blanker for a particle-optical apparatus, in which the blanker is used to generate a train of pulses with a fixed repetition rate. Such pulse trains with a sub-picosecond pulse length are for example used in the study of chemistry in the femtosecond scale. The beam blanker according to the invention uses a resonant structure, as a result of which the voltage is amplified by the quality factor Q of the resonant structure. During each zero-crossing of the signal, thus twice per period of the resonant frequency, the beam is transmitted, and the beam is blanked during the rest of the time. In a preferred embodiment the resonant structure comprises a transmission line. Impedance matching of signal source and resonant structure may be performed by tuning stubs.

Abstract: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

Abstract: An inspection apparatus is provided comprising in combination at least an optical microscope (2, 3, 4) and an ion- or electron microscope (7, 8) equipped with a source (7) for emitting a primary beam (9) of radiation to a sample (10) in a sample holder. The apparatus may comprise a detector (8) for detection of secondary radiation (11) backscattered from the sample and induced by the primary beam. The optical microscope is equipped with an light collecting device (2) to receive in use luminescence light (12) emitted by the sample and to focus it on a photon-detector (4).

Abstract: The invention relates to a method and a device for manipulation of one or more charged particle beams of a plurality of charged particle beamlets in a charged particle multi-beamlet apparatus. The manipulator device comprises a planar substrate comprising an array of through openings in the plane of the substrate, each of these through openings is arranged for passing the at least one charged particle beamlet there through, wherein each of the through openings is provided with one or more electrodes arranged around the through opening, and a electronic control circuit for providing control signals to the one or more electrodes of each through opening, wherein the electronic control circuit is arranged for providing the one or more electrodes of each individual through opening with an at least substantially analog adjustable voltage.

Abstract: The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.

Abstract: The invention relates to a multiple beam charged particle optical system comprising: a charged particle source for generating a plurality of charged particle beamlets, and charged particle optics for directing the charged particle beamlets from the charged particle source towards a target, wherein each charged particle beamlet defines a beamlet center line, said charged particle optics comprising one or more electrostatic lens arrays, each comprising two or more array electrodes for generating a plurality of electrostatic lenslets, wherein each lenslet is arranged for focusing a corresponding charged particle beamlet, and wherein each lenslet defines a lenslet optical axis, wherein at least one of said one or more electrostatic lens arrays comprises one or more off-axis electrostatic lenslets, wherein the beamlet center line of the corresponding charged particle beamlet passes through said off-axis electrostatic lenslet at a distance from its lenslet optical axis.

Abstract: The invention relates to an electrostatic beam blanker for a particle-optical apparatus, in which the blanker is used to generate a train of pulses with a fixed repetition rate. Such pulse trains with a sub-picosecond pulse length are for example used in the study of chemistry in the femtosecond scale. The beam blanker according to the invention uses a resonant structure, as a result of which the voltage is amplified by the quality factor Q of the resonant structure. During each zero-crossing of the signal, thus twice per period of the resonant frequency, the beam is transmitted, and the beam is blanked during the rest of the time. In a preferred embodiment the resonant structure comprises a transmission line. Impedance matching of signal source and resonant structure may be performed by tuning stubs.

Abstract: A dispenser cathode which comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, said emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.

Abstract: The invention pertains to a direct write lithography system comprising: A converter comprising an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each field emitter having an activation area; A plurality of individually controllable light sources, each light source arranged for activating one field emitter; Controller means for controlling each light source individually; Focusing means for focusing each electron beam from the field emitters with a diameter smaller than the diameter of a light source on an object plane.

Abstract: The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Abstract: A dispenser cathode which is comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, and emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.

Abstract: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

Abstract: A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Abstract: The invention relates to a multiple be charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. En further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Abstract: A direct write lithography system. The system includes a converter having an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each filed emitter having an activation area. A plurality of individually controllable light sources, each light source arranged for activating one field emitter. A controller controls each light source individually. Each electron beam is focused from the field emitters with a diameter smaller than the diameter of a light source on an object plane.

Abstract: The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.

Abstract: The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Abstract: A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.

Abstract: A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.