Patents by Inventor Ping Chao

Ping Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9379093
    Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: June 28, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Szu-Ying Chen, Ping-Yin Liu, Calvin Yi-Ping Chao, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung, Lan-Lin Chao
  • Patent number: 9369652
    Abstract: A readout device comprises a readout circuit having a first switch configured to receive a pixel reset signal, a second switch configured to receive a pixel output signal, and a third switch configured to connect the first switch to the second switch. A first capacitor is connected to the first switch, a second capacitor is connected the second switch, a fourth switch is connected to the first capacitor, and a fifth switch is connected to the second capacitor. The fifth switch is connected to the fourth switch. The readout circuit also comprises a sixth switch connected to the first capacitor and a seventh switch connected to the second capacitor. The sixth switch is configured to provide a first output of the readout circuit, and the seventh is configured to provide a second output of the readout circuit.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: June 14, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Sheng Chou, Calvin Yi-Ping Chao, Kuo-Yu Chou, Honyih Tu, Yi-Che Chen
  • Publication number: 20160156314
    Abstract: The present invention provides a self-timed differential amplifier, including an amplifier unit, having a pair of read/write terminals, wherein data is read or written by a select line; a pair of precharge transistors, controlled by a control line; and a pair of cross-coupled transistors, controlled by a column select line. Moreover, a complementary differential amplifier is formed by the combination of the pair of precharge transistors and the pair of cross-coupled transistors. The pair of the precharge transistors and the pair of cross-coupled transistors are connected to the pair of read/write terminals of the amplifier unit.
    Type: Application
    Filed: January 7, 2015
    Publication date: June 2, 2016
    Inventors: Mingshiang Wang, Ping-Chao Ho
  • Publication number: 20160150167
    Abstract: Among other things, techniques and systems are provided for identifying when a pixel of an image sensor is in an idle period. A flag is utilized to differentiate when the pixel is in an idle period and when the pixel is in an integration period. When the flag indicates that the pixel is in an idle period, a blooming operation is performed on the pixel to reduce an amount of electrical charge that has accumulated at the pixel or to mitigate electrical charge from accumulating at the pixel. In this way, the blooming operation reduces a probability that the photosensitive sensor becomes saturated during an idle period of the pixel, and thus reduces the likelihood of electrical charge from a pixel that is not intended contribute to an image from spilling over and potentially contaminating a pixel that is intended to contribute to the image.
    Type: Application
    Filed: February 1, 2016
    Publication date: May 26, 2016
    Inventors: Kuo-Yu Chou, Calvin Yi-Ping Chao, Fu-Lung Hsueh, Honyih Tu, Jhy-Jyi Sze
  • Patent number: 9343352
    Abstract: An embodiment radio frequency area of an integrated circuit is disclosed. The radio frequency area includes a substrate having an implant region. The substrate has a first resistance. A buried oxide layer is disposed over the substrate and an interface layer is disposed between the substrate and the buried oxide layer. The interface layer has a second resistance lower than the first resistance. A silicon layer is disposed over the buried oxide layer and an interlevel dielectric is disposed in a deep trench. The deep trench extends through the silicon layer, the buried oxide layer, and the interface layer over the implant region. The deep trench may also extend through a polysilicon layer disposed over the silicon layer.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: May 17, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Yu Cheng, Wei-Kung Tsai, Kuan-Chi Tsai, Tsung-Yu Yang, Chung-Long Chang, Chun-Hong Chen, Chih-Ping Chao, Chen-Yao Tang, Yu Hung Chen
  • Patent number: 9344717
    Abstract: A method and apparatus for SAO (sample adaptive offset) processing in a video decoder are disclosed. Embodiments according to the present invention reduce the required line buffer associated with the SAO processing. According to one embodiment, tri-level comparison results for one deblocked pixel row or column of the image unit are determined according to SAO type of the deblocked pixel row or column. The tri-level comparison results are stored in a buffer and the tri-level comparison results are read back from the buffer for SAO processing of the subsequent row or column from a subsequent image unit. The comparison results correspond to “larger”, “equal” and “smaller” states. The comparison results can be stored more efficiently.
    Type: Grant
    Filed: May 6, 2013
    Date of Patent: May 17, 2016
    Assignee: MEDIATEK INC.
    Inventors: Ping Chao, Yung-Chang Chang, Chi-Cheng Ju
  • Publication number: 20160133659
    Abstract: A depth sensing pixel includes a photodiode; a first photo storage device; and a first transistor configured to selectively couple the photodiode to the first photo storage device. The depth sensing pixel further includes a second photo storage diode different from the first photo storage device; and a second transistor configured to selectively couple the photodiode to the second photo storage device. The depth sensing pixel further includes a first transfer gate configured to selectively couple the first photo storage diode to a first output node. The depth sensing pixel further includes a second transfer gate configured to selectively couple the second photo storage diode to a second output node.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 12, 2016
    Inventors: Calvin Yi-Ping CHAO, Kuo-Yu CHOU, Chih-Min LIU
  • Patent number: 9321795
    Abstract: The present invention relates to a new use of a cinnamaldehyde derivative of formula (I) for treating glomerulonephritis (GN). Particularly, the present invention discloses that the cinnamaldehyde derivative of formula (I) is effective in treating glomerulonephritis (GN), which can alleviate various symptoms and signs of GN, including reducing proteinuria, serum blood urea nitrogen (BUN), glomerular cell proliferation, and renal macrophage/lymphocyte infiltration, etc.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: April 26, 2016
    Assignee: National Defense Medical Center
    Inventors: Ann Chen, Shuk-Man Ka, Kuo-Feng Hua, Shui-Tein Chen, Kuo-Ping Chao
  • Patent number: 9325923
    Abstract: A sensor system includes a pixel array, column units and a compensation circuit. The pixel array is configured to provide pixel column data. The column units are configured to generate an offset data out signal from the pixel column data. The offset data out signal includes digital offsets. The compensation circuit is configured to remove the digital offsets from the offset data out signal. The compensation circuit is also configured to generate a data out signal.
    Type: Grant
    Filed: May 14, 2013
    Date of Patent: April 26, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuo-Yu Chou, Erik Tao, Shang-Fu Yeh, Calvin Yi-Ping Chao
  • Publication number: 20160099169
    Abstract: The methods for forming a radio frequency area of an integrated circuit are provided. The method includes forming a buried oxide layer over a substrate, and an interface layer is formed between the substrate and the buried oxide layer. The method also includes etching through the buried oxide layer and the interface layer to form a deep trench, and a bottom surface of the deep trench is level with a bottom surface of the interface layer. The method further includes forming an implant region directly below the deep trench and forming an interlayer dielectric layer in the deep trench.
    Type: Application
    Filed: December 16, 2015
    Publication date: April 7, 2016
    Inventors: Kuo-Yu CHENG, Keng-Yu CHEN, Wei-Kung TSAI, Kuan-Chi TSAI, Tsung-Yu YANG, Chung-Long CHANG, Chun-Hung CHEN, Chih-Ping CHAO
  • Publication number: 20160086996
    Abstract: A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.
    Type: Application
    Filed: November 30, 2015
    Publication date: March 24, 2016
    Inventors: Chih-Min Liu, Honyih Tu, Calvin Yi-Ping Chao, Fu-Lung Hsueh
  • Patent number: 9270908
    Abstract: Among other things, techniques and systems are provided for identifying when a pixel of an image sensor is in an idle period. A flag is utilized to differentiate when the pixel is in an idle period and when the pixel is in an integration period. When the flag indicates that the pixel is in an idle period, a blooming operation is performed on the pixel to reduce an amount of electrical charge that has accumulated at the pixel or to mitigate electrical charge from accumulating at the pixel. In this way, the blooming operation reduces a probability that the photosensitive sensor becomes saturated during an idle period of the pixel, and thus reduces the likelihood of electrical charge from a pixel that is not intended contribute to an image from spilling over and potentially contaminating a pixel that is intended to contribute to the image.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: February 23, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Kuo-Yu Chou, Calvin Yi-Ping Chao, Jhy-Jyi Sze, Honyih Tu, Fu-Lung Hsueh
  • Publication number: 20160047524
    Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.
    Type: Application
    Filed: October 23, 2015
    Publication date: February 18, 2016
    Inventors: Yao Chiu LIN, Been-Yu LIAW, Chih-Ming WANG, Ming-Chi HSU, Yi-Jui HUANG, Tsung-Xian LEE, Kuang-Ping CHAO, Jhih-Sian WANG
  • Patent number: 9255666
    Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises an inner cover comprising a top surface having a first length; a pedestal on which the inner cover is disposed comprising a top surface having a second length; and a holder supporting the pedestal; wherein the first length is greater than the second length.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: February 9, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chiu-Lin Yao, Been-Yu Liaw, Chih-Ming Wang, Ming-Chi Hsu, Yi-Jui Huang, Tsung-Xian Lee, Kuang-Ping Chao, Jhih-Sian Wang, Min-hsun Hsieh, Chien-Liang Liu
  • Patent number: 9230988
    Abstract: Embodiments of mechanisms of forming a radio frequency area of an integrated circuit are provided. The radio frequency area of an integrated circuit structure includes a substrate, a buried oxide layer formed over the substrate, and an interface layer formed between the substrate and the buried oxide layer. The radio frequency area of an integrated circuit structure also includes a silicon layer formed over the buried oxide layer and an interlayer dielectric layer formed in a deep trench. The radio frequency area of an integrated circuit structure further includes the interlayer dielectric layer extending through the silicon layer, the buried oxide layer and the interface layer. The radio frequency area of an integrated circuit structure includes an implant region formed below the interlayer dielectric layer in the deep trench and a polysilicon layer formed below the implant region.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: January 5, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Yu Cheng, Keng-Yu Chen, Wei-Kung Tsai, Kuan-Chi Tsai, Tsung-Yu Yang, Chung-Long Chang, Chun-Hung Chen, Chih-Ping Chao
  • Patent number: 9202963
    Abstract: A Dual-Side Illumination (DSI) image sensor chip includes a first image sensor chip configured to sense light from a first direction, and a second image sensor chip aligned to, and bonded to, the first image sensor chip. The second image sensor chip is configured to sense light from a second direction opposite the first direction.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: December 1, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Min Liu, Honyih Tu, Calvin Yi-Ping Chao, Fu-Lung Hsueh
  • Patent number: 9194541
    Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: November 24, 2015
    Assignee: Epistar Corporation
    Inventors: Yao Chiu Lin, Been-Yu Liaw, Chih-Ming Wang, Ming-Chi Hsu, Yi-Jui Huang, Tsung-Xian Lee, Kuang-Ping Chao, Jhih-Sian Wang
  • Publication number: 20150299242
    Abstract: The present invention relates to a new use of a cinnamaldehyde derivative of formula (I) for treating glomerulonephritis (GN). Particularly, the present invention discloses that the cinnamaldehyde derivative of formula (I) is effective in treating glomerulonephritis (GN), which can alleviate various symptoms and signs of GN, including reducing proteinuria, serum blood urea nitrogen (BUN), glomerular cell proliferation, and renal macrophage/lymphocyte infiltration, etc.
    Type: Application
    Filed: April 22, 2015
    Publication date: October 22, 2015
    Inventors: Ann CHEN, Shuk-Man KA, Kuo-Feng HUA, Shui-Tein Chen, Kuo-Ping CHAO
  • Publication number: 20150297560
    Abstract: The present invention relates to use of osthole for manufacturing a composition for treating focal segmental glomerulosclerosis (FSGS). Particularly, the present invention discloses that osthole is effective in treating focal segmental glomerulosclerosis (FSGS), which can alleviate various symptoms and signs of FSGS, including proteinuria, renal fibrosis, glomerular epithelial hyperplasia lesion (EPHL), and macrophage/lymphocyte infiltration in the kidney, etc.
    Type: Application
    Filed: April 22, 2015
    Publication date: October 22, 2015
    Inventors: Shuk-Man KA, Ann CHEN, Kuo-Feng HUA, Kuo-Ping CHAO, Shun-Min YANG
  • Patent number: 9165968
    Abstract: A stacked image sensor and method for making the same are provided. The stacked image sensor includes an upper chip with a pixel array thereon. The second chip includes a plurality of column circuits and row circuits associated with the columns and rows of the pixel array and disposed in respective column circuit and row circuit regions that are arranged in multiple groups. Inter-chip bonding pads are formed on each of the chips. The inter-chip bonding pads on the second chip are arranged linearly and are contained within the column circuit regions and row circuit regions in one embodiment. In other embodiments, the inter-chip bonding pads are staggered with respect to each other. In some embodiments, the rows and columns of the pixel array include multiple signal lines and the corresponding column circuit regions and row circuit regions also include multiple inter-chip bonding pads.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: October 20, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Calvin Yi-Ping Chao, Kuo-Yu Chou, Fu-Lung Hsueh