Patents by Inventor Ping-Chia Shih
Ping-Chia Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240006345Abstract: A physical unclonable function (PUF) generator including a substrate and semiconductor units is provided. Each of the semiconductor units includes an isolation structure, a first conductive line, and a second conductive line. The isolation structure is located in the substrate. The isolation structure has a first protrusion portion and a recess. The first protrusion portion and the recess are adjacent to each other. The first conductive line is located above the first protrusion portion and the recess. The second conductive line is located above the first conductive line. At least one short circuit randomly exists between at least one of the first conductive lines and at least one of the second conductive lines in at least one of the semiconductor units.Type: ApplicationFiled: July 27, 2022Publication date: January 4, 2024Applicant: United Microelectronics Corp.Inventors: Po Hsien Chen, Ping-Chia Shih, Che Hao Kuo, Chia-Min Hung, Ching-Hua Yeh, Wan-Chun Liao
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Patent number: 11758720Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.Type: GrantFiled: December 7, 2022Date of Patent: September 12, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Min Hung, Ping-Chia Shih, Che-Hao Kuo, Kuei-Ya Chuang, Ssu-Yin Liu, Po-Hsien Chen, Wan-Chun Liao
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Publication number: 20230260827Abstract: A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.Type: ApplicationFiled: March 7, 2022Publication date: August 17, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ping-Chia Shih, Che-Hao Kuo, Ssu-Yin Liu, Ching-Hua Yeh, I-Hsin Sung
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Publication number: 20230103976Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.Type: ApplicationFiled: December 7, 2022Publication date: April 6, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Min Hung, Ping-Chia Shih, Che-Hao Kuo, Kuei-Ya Chuang, Ssu-Yin Liu, Po-Hsien Chen, Wan-Chun Liao
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Patent number: 11616069Abstract: The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.Type: GrantFiled: October 19, 2020Date of Patent: March 28, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ping-Chia Shih, Kuei-Ya Chuang, Chuang-Hsin Chueh, Ming-Che Tsai, Wen-Lin Wang, Yi-Chun Teng, Ssu-Yin Liu, Wan-Chun Liao
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Patent number: 11552088Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.Type: GrantFiled: March 11, 2021Date of Patent: January 10, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Min Hung, Ping-Chia Shih, Che-Hao Kuo, Kuei-Ya Chuang, Ssu-Yin Liu, Po-Hsien Chen, Wan-Chun Liao
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Publication number: 20220293615Abstract: A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.Type: ApplicationFiled: March 11, 2021Publication date: September 15, 2022Inventors: Chia-Min Hung, Ping-Chia Shih, Che-Hao Kuo, Kuei-Ya Chuang, Ssu-Yin Liu, Po-Hsien Chen, Wan-Chun Liao
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Patent number: 11282799Abstract: A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.Type: GrantFiled: January 14, 2020Date of Patent: March 22, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wen-Lin Wang, Ping-Chia Shih, Ming-Che Tsai, Kuei-Ya Chuang, Yi-Chun Teng, Po-Hsien Chen, Wan-Chun Liao
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Publication number: 20220077166Abstract: The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.Type: ApplicationFiled: October 19, 2020Publication date: March 10, 2022Inventors: Ping-Chia SHIH, Kuei-Ya CHUANG, Chuang-Hsin CHUEH, Ming-Che TSAI, Wen-Lin WANG, Yi-Chun TENG, Ssu-Yin LIU, Wan-Chun LIAO
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Publication number: 20210217708Abstract: A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.Type: ApplicationFiled: January 14, 2020Publication date: July 15, 2021Inventors: Wen-Lin Wang, Ping-Chia Shih, Ming-Che Tsai, Kuei-Ya Chuang, Yi-Chun Teng, Po-Hsien Chen, Wan-Chun Liao
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Patent number: 10720440Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.Type: GrantFiled: March 21, 2018Date of Patent: July 21, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Wen Wang, Hsiang-Chen Lee, Wen-Peng Hsu, Kuo-Lung Li, Meng-Chun Chen, Zi-Jun Liu, Ping-Chia Shih
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Patent number: 10580780Abstract: Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.Type: GrantFiled: June 11, 2018Date of Patent: March 3, 2020Assignee: United Microelectronics Corp.Inventors: Zi-Jun Liu, Ping-Chia Shih, Chi-Cheng Huang, Kuo-Lung Li, Hung-Wei Lin, An-Hsiu Cheng, Chih-Hao Pan, Cheng-Hua Chou, Chih-Hung Wang
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Publication number: 20190378846Abstract: Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.Type: ApplicationFiled: June 11, 2018Publication date: December 12, 2019Applicant: United Microelectronics Corp.Inventors: Zi-Jun Liu, Ping-Chia Shih, Chi-Cheng Huang, Kuo-Lung Li, Hung-Wei Lin, An-Hsiu Cheng, Chih-Hao Pan, Cheng-Hua Chou, Chih-Hung Wang
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Patent number: 10340282Abstract: A semiconductor memory device includes a substrate, having a plurality of cell regions, wherein the cell regions are parallel and extending along a first direction. A plurality of STI structures is disposed in the substrate, extending along the first direction to isolate the cell regions, wherein the STI structures have a uniform height lower than the substrate in the cell regions. A selection gate line is extending along a second direction and crossing over the cell regions and the STI structures. A control gate line is adjacent to the selection gate line in parallel extending along the second direction and also crosses over the cell regions and the STI structures. The selection gate line and the control gate line together form a two-transistor (2T) memory cell.Type: GrantFiled: February 13, 2018Date of Patent: July 2, 2019Assignee: United Microelectronics Corp.Inventors: Shu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang, An-Hsiu Cheng, Ping-Chia Shih, Chi-Cheng Huang, Kuo-Lung Li, Chia-Hui Huang, Chih-Yao Wang, Zi-Jun Liu, Chih-Hao Pan
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Patent number: 10312250Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a plurality of isolation structures, a charge storage layer, and a conductive layer. The substrate has a memory region and a logic region. The substrate in the memory region has a plurality of semiconductor fins. The isolation structures are disposed in the substrate to isolate the semiconductor fins. The semiconductor fins are protruded beyond the isolation structures. The charge storage layer covers the semiconductor fins. The conductive layer is disposed across the semiconductor fins and the isolation structures such that the charge storage layer is disposed between the conductive layer and the semiconductor fins.Type: GrantFiled: January 23, 2018Date of Patent: June 4, 2019Assignee: United Microelectronics Corp.Inventors: Hsuan-Chun Tseng, Hsueh-Chun Hsiao, Tzu-Yun Chang, Chi-Cheng Huang, Ping-Chia Shih
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Publication number: 20190043877Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.Type: ApplicationFiled: August 1, 2017Publication date: February 7, 2019Inventors: Kuo-Lung Li, Ping-Chia Shih, Wen-Peng Hsu, Chia-Wen Wang, Meng-Chun Chen, Chih-Hao Pan
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Patent number: 10199385Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.Type: GrantFiled: August 1, 2017Date of Patent: February 5, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Lung Li, Ping-Chia Shih, Wen-Peng Hsu, Chia-Wen Wang, Meng-Chun Chen, Chih-Hao Pan
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Publication number: 20190013324Abstract: A method for fabricating a semiconductor integrated circuit (IC) having a SONOS memory device and a logic/analog device requiring different gate oxide layers comprises steps as follows: A substrate having a high voltage region, a memory region and a logic/analog is firstly provided. Next, a first gate oxide layer is formed on the high voltage region, the memory region and the logic/analog. The first gate oxide layer is then patterned to expose the logic/analog region and to define a first channel area and a second channel area respectively on the memory region and the high voltage region. Subsequently, a silicon oxide-silicon nitride-silicon oxide (ONO) structure is formed on the first channel area. A second gate oxide layer is then formed on the logic/analog and patterned to define a third channel area.Type: ApplicationFiled: July 5, 2017Publication date: January 10, 2019Inventors: Ping-Chia Shih, Chun-Yao Wang, Ming-Hua Tsai, Wan-Chun Liao
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Patent number: 10177165Abstract: A method for fabricating a semiconductor integrated circuit (IC) having a SONOS memory device and a logic/analog device requiring different gate oxide layers comprises steps as follows: A substrate having a high voltage region, a memory region and a logic/analog is firstly provided. Next, a first gate oxide layer is formed on the high voltage region, the memory region and the logic/analog. The first gate oxide layer is then patterned to expose the logic/analog region and to define a first channel area and a second channel area respectively on the memory region and the high voltage region. Subsequently, a silicon oxide-silicon nitride-silicon oxide (ONO) structure is formed on the first channel area. A second gate oxide layer is then formed on the logic/analog and patterned to define a third channel area.Type: GrantFiled: July 5, 2017Date of Patent: January 8, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ping-Chia Shih, Chun-Yao Wang, Ming-Hua Tsai, Wan-Chun Liao
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Publication number: 20180211966Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.Type: ApplicationFiled: March 21, 2018Publication date: July 26, 2018Applicant: United Microelectronics Corp.Inventors: Chia-Wen Wang, Hsiang-Chen Lee, Wen-Peng Hsu, Kuo-Lung Li, Meng-Chun Chen, Zi-Jun Liu, Ping-Chia Shih