Abstract: The present invention is to provide a chip diode for surface mounting comprising p+ and n+ type semiconductors on two surfaces of a semiconductor wafer respectively; a plurality of parallel, spaced first and second grooves formed on the p+ type semiconductor along X and Y axes and penetrated through the p+ type semiconductor into the n+ type semiconductor; a plurality of first insulation layers in the first and second grooves adapted to separate and insulate the p+ type semiconductor from the n+ type semiconductor at both sides; a plurality of first conductive metal layers coated on a central portion of the semiconductor wafer for soldering; and a plurality of second conductive metal layers coated on an edge of the semiconductor wafer and extended to sides of the n+ type semiconductor on the second surface of the semiconductor wafer to be in communication therewith.

Abstract: A new method and apparatus for detecting and measuring the level of metal present on the surface of a substrate is achieved. Energy, in the form of rf or light or microwave energy, is directed at the surface of a wafer, the reflected energy or the energy that passes through the semiconductor substrate is captured and analyzed for energy level and/or frequency content. Based on this analysis conclusions can be drawn regarding presence and type of metal on the surface of the wafer. Furthermore, by inclusion of metal within the resonating circuit of an rf generator changes the frequency of the vibration and therefore detects the presence of metal.

Abstract: A scanner has a housing, and a glass piece positioned over the housing and covering portions of the interior of the housing, with the glass piece adapted to support an image to be scanned. The scanner further includes a sensor positioned inside the housing below the glass piece, and a light source positioned inside the housing below the glass piece in a manner to direct a light beam at the glass piece so that the light beam is reflected off the glass piece and is received by the sensor to capture the image to be scanned. As a result, the entire image is captured at the same time by the sensor.

Abstract: The invention relates to an integrated chip diode manufactured by forming two different typed semiconductors on the top and bottom of a wafer respectively and forming a plurality of diodes thereon, each diode comprises glass insulator encapsulated on sides thereof, two conductive metal layers formed on the surfaces of the semiconductors respectively, an insulation material coated on a portion of the surface of one conductive metal layer and a third conductive metal layer sintered on the glass insulator, such that the other conductive metal layer can be electrically connected to the insulation material on the one conductive metal layer via the third conductive metal layer. Thus, two independent soldered conductive terminals are formed at the same sides of the diodes and electrically connected to each of different typed semiconductors.

Abstract: The invention relates to an integrated chip diode manufactured by forming two different typed semiconductors on the top and bottom of a wafer respectively and forming a plurality of diodes thereon, each diode comprises glass insulator encapsulated on sides thereof, two conductive metal layers formed on the surfaces of the semiconductors respectively, an insulation material coated on a portion of the surface of one conductive metal layer and a third conductive metal layer sintered on the glass insulator, such that the other conductive metal layer can be electrically connected to the insulation material on the one conductive metal layer via the third conductive metal layer. Thus, two independent soldered conductive terminals are formed at the same sides of the diodes and electrically connected to each of different typed semiconductors.

Abstract: A toilet seat includes an upper and a lower seat for a predetermined number of sets of restoring mechanism, transmission mechanism, and shielding panel to mount between them. When the upper seat is subjected to a downward force, the restoring mechanism is compressed and the transmission mechanism Is caused to move the shielding panel horizontally from a closed position closing a central opening of the toilet seat to an opened position opening the central opening. And when the toilet seat is not in use, a restoring force of the compressed restoring mechanism pushes the upper seat and the transmission mechanism upward, and the shielding panel is brought by the transmission mechanism to move from the opened position to the closed position again.

Abstract: A new method and apparatus for detecting and measuring the level of metal present on the surface of a substrate is achieved. Energy, in the form of rf or light or microwave energy, is directed at the surface of a wafer, the reflected energy or the energy that passes through the semiconductor substrate is captured and analyzed for energy level and/or frequency content. Based on this analysis conclusions can be drawn regarding presence and type of metal on the surface of the wafer. Furthermore, by inclusion of metal within the resonating circuit of an rf generator changes the frequency of the vibration and therefore detects the presence of metal.

Abstract: The present invention discloses a catalyst useful in selective oxidation of carbon monoxide (CO) contained in a hydrogen-rich reformate gas. The catalyst is a zeolite carrying Pt, Ru or alloys thereof. Pt or Ru is deposited on the zeolite by incipient wetness impregnation with an aqueous solution. The reformate gas having a reduced CO concentration can be introduced to a fuel cell as a fuel.

Abstract: A new method of forming gate conductor lines for a DRAM in the manufacture of an integrated circuit device has been achieved. A semiconductor substrate is provided. Active areas are defined. A gate conductor layer is deposited overlying the semiconductor substrate. The gate conductor layer is patterned to form gate conductor lines. The intersections of the gate conductor lines and the active areas form DRAM transistors. Adjacent gate conductor lines are spaced a first minimum distance in critical regions and are spaced a second minimum distance in non-critical regions. The critical regions are defined as the active areas between adjacent gate conductor lines where bit line contacts are planned. The non-critical regions are defined as areas located between the critical regions and the adjacent gate conductor lines. The second minimum distance is greater than the first minimum distance to thereby decrease the aspect ratio in the non-critical regions to less than the aspect ratio in the critical regions.

Abstract: A new method and apparatus for detecting and measuring the level of metal present on the surface of a substrate is achieved. Energy, in the form of rf or light or microwave energy, is directed at the surface of a wafer, the reflected energy or the energy that passes through the semiconductor substrate is captured and analyzed for energy level and/or frequency content. Based on this analysis conclusions can be drawn regarding presence and type of metal on the surface of the wafer. Furthermore, by inclusion of metal within the resonating circuit of an rf generator changes the frequency of the vibration and therefore detects the presence of metal.

Abstract: A new method and apparatus for detecting and measuring the level of metal present on the surface of a substrate is achieved. Energy, in the form of rf or light or microwave energy, is directed at the surface of a wafer, the reflected energy or the energy that passes through the semiconductor substrate is captured and analyzed for energy level and/or frequency content. Based on this analysis conclusions can be drawn regarding presence and type of metal on the surface of the wafer. Furthermore, by inclusion of metal within the resonating circuit of an rf generator changes the frequency of the vibration and therefore detects the presence of metal.

Abstract: A new method of forming gate conductor lines for a DRAM in the manufacture of an integrated circuit device has been achieved. A semiconductor substrate is provided. Active areas are defined. A gate conductor layer is deposited overlying the semiconductor substrate. The gate conductor layer is patterned to form gate conductor lines. The intersections of the gate conductor lines and the active areas form DRAM transistors. Adjacent gate conductor lines are spaced a first minimum distance in critical regions and are spaced a second minimum distance in non-critical regions. The critical regions are defined as the active areas between adjacent gate conductor lines where bit line contacts are planned. The non-critical regions are defined as areas located between the critical regions and the adjacent gate conductor lines. The second minimum distance is greater than the first minimum distance to thereby decrease the aspect ratio in the non-critical regions to less than the aspect ratio in the critical regions.

Abstract: A new method and apparatus for detecting and measuring the level of metal present on the surface of a substrate is achieved. Energy, in the form of rf or light or microwave energy, is directed at the surface of a wafer, the reflected energy or the energy that passes through the semiconductor substrate is captured and analyzed for energy level and/or frequency content. Based on this analysis conclusions can be drawn regarding presence and type of metal on the surface of the wafer. Furthermore, by inclusion of metal within the resonating circuit of an rf generator changes the frequency of the vibration and therefore detects the presence of metal.

Abstract: The method of the present invention forms a thin oxide layer on the circumferential wall of a recess in a trench and, at the same time, forms a thick oxide layer on the bottom surface of the recess. The thick oxide layer serves as the trench top oxide and the thin oxide layer serves as the gate oxide.

Abstract: An infuser for dispensing medicaments to a patient at a preselected controlled flow rate. A housing unit is provided having a precalibrated flow control valve assembly portion sized to the desired flow rate. At the outer proximal end of the housing an outlet tubing or catheter is interconnected to the flow control valve assembly. A conventional syringe has its proximal end removably and sealably contained within the housing with its tip portion in sealingly mating engagement with the flow control valve assembly whereby the housing, syringe, and valve assembly are disposed in coaxial alignment. Elastomeric members are disposed on either side of the syringe and housing, each such member being anchored at opposed ends to the proximal end of the housing and the distal end of the syringe plunger.