Abstract: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate has an upper surface. The high voltage device includes: a second conductive type buried layer, which is formed in the substrate; a first conductive type well, which is formed between the upper surface and the buried layer; and a second conductive type well, which is connected to the first conductive type well and located at different horizontal positions. The second conductive type well includes a well lower surface, which has a first part and a second part, wherein the first part is directly above the buried layer and electrically coupled to the buried layer; and the second part is not located above the buried layer and forms a PN junction with the substrate.

Abstract: Methods are provided to increase resistance to cell damage in a subject. The increase in resistance to cell damage in a subject in the subject is accomplished by decreasing activity of eEF2 kinase in the subject. The eEF2 kinase activity can be decreased by decreasing the amount of functional eEF2 kinase produced by the subject, including contacting the eEF2 kinase with a compound that inhibits phosphorylation of eEF2 kinase substrate or decreasing the amount of functional eEF2 kinase is decreased by reducing expression of a gene encoding the eEF2 kinase.

Abstract: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate has an upper surface. The high voltage device includes: a second conductive type buried layer, which is formed in the substrate; a first conductive type well, which is formed between the upper surface and the buried layer; and a second conductive type well, which is connected to the first conductive type well and located at different horizontal positions. The second conductive type well includes a well lower surface, which has a first part and a second part, wherein the first part is directly above the buried layer and electrically coupled to the buried layer; and the second part is not located above the buried layer and forms a PN junction with the substrate.

Abstract: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate having a device region; a gate, which is located on a surface of the substrate; a second conductive type source and a second conductive type drain in the device region at different sides of the gate respectively; and a second conductive type drift region, which is located in the device region, between the source and the drain. The gate includes: a conductive layer for receiving a gate voltage; and multiple dielectric layers with different thicknesses, located at different horizontal positions. From cross-section view, each dielectric layer is between the conductive layer and the substrate, and the multiple dielectric layers are arranged in an order from thinner to thicker from a side closer to the source to a side closer to the drain.

Abstract: The present invention provides a microsatellite marker combination for identifying Lanyu pig breed, and the identification method thereof. The identification method comprises the following steps: (a) providing a genomic DNA sample obtained from a pig; (b) identifying the polymorphism of microsatellite markers of said genomic DNA sample; and (c) analyzing the results obtained from step (b) to determine the phylogenetic relationship between said pig and Lanyu pig.

Abstract: A method of reducing contamination of contact pads in a metallization system of a semiconductor device. Fluorine contamination of contact pads in a semiconductor device can be reduced by appropriately covering the sidewall portions of a metallization system in the scribe lane in order to significantly reduce or suppress the out diffusion of fluorine species, which may react with the exposed surface areas of the contact pads. The quality of the bond contacts is enhanced, possibly without requiring any modifications in terms of design rules and electrical specifications.

Abstract: A fixed-on-time controller utilizing an adaptive saw signal for discontinuous mode PFC power conversion, the fixed-on-time controller comprising: an error amplifier, having a negative input end coupled to a feedback signal, a positive input end coupled to a reference voltage, and an output end for providing a threshold signal; an adaptive current source generator, used to generate an adaptive current source according to the threshold signal; a capacitor, charged by the adaptive current source, being used for carrying a saw signal; a switch, used to discharge the capacitor under the control of a reset signal; and a comparator, having a negative input end coupled to the threshold signal, a positive input end coupled to the saw signal, and an output end for providing a turn-off signal; and a fixed-on-time driver circuit, used to provide a driving signal and the reset signal according to the turn-off signal and a sensing signal.

Abstract: The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

Abstract: The present invention relates to a method for producing a multi-function polyester film by monolayer extrusion or multilayer extrusion, comprising providing at least one polyester material and at least one polyester material having diffusion particles; melt extruding and then cooling the polyester material rapidly to form a polyester sheet; treating the polyester sheet with biaxially orientation and then cooling the polyester sheet to obtain the polyester film. The method of the present invention provides the multi-function polyester film with a haze value below 95%, and a surface roughness value (Ra) above 0.1 nm.

Abstract: In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system.

Abstract: The invention provides dyes for optical disc recoding media, having the general formula: wherein m, n is independently selected from integers 0-3; X represents oxygen, sulfur, C—R1, or N—R2R3; Y is oxygen or sulfur; each of R1, R2, and R3 can be the same or different; and Z? is a cation. The dyes have a maximum absorption in wavelength of 300-500 nm and can be used in recording layers of high density optical disc recording media.

Abstract: Methods are provided to increase resistance to cell damage in a subject. The increase in resistance to cell damage in a subject in the subject is accomplished by decreasing activity of eEF2 kinase in the subject. The eEF2 kinase activity can be decreased by decreasing the amount of functional eEF2 kinase produced by the subject, including contacting the eEF2 kinase with a compound that inhibits phosphorylation of eEF2 kinase substrate or decreasing the amount of functional eEF2 kinase is decreased by reducing expression of a gene encoding the eEF2 kinase.

Abstract: The present invention discloses an LDMOS device having an increased punch-through voltage and a method for making same. The LDMOS device includes: a substrate; a well of a first conductive type formed in the substrate; an isolation region formed in the substrate; a body region of a second conductive type in the well; a source in the body region; a drain in the well; a gate structure on the substrate; and a first conductive type dopant region beneath the body region, for increasing a punch-through voltage.

Abstract: The present invention discloses a high voltage metal oxide semiconductor (HVMOS) device and a method for making same. The high voltage metal oxide semiconductor device comprises: a substrate; a gate structure on the substrate; a well in the substrate, the well defining a device region from top view; a first drift region in the well; a source in the well; a drain in the first drift region, the drain being separated from the gate structure by a part of the first drift region; and a P-type dopant region not covering all the device region, wherein the P-type dopant region is formed by implanting a P-type dopant for enhancing the breakdown voltage of the HVMOS device (for N-type HVMOS device) or reducing the ON resistance of the HVMOS device (for P-type HVMOS device).

Abstract: An action-based in-process software defect prediction (ABDP) applies classifying records of a performed action to predict whether subsequent actions cause defects in a project. A performed action is previously defined herein as an operation performed based on tasks in Work Breakdown Structure (WBS) of the project. Rather than focusing on the reported defects, ABDP discovers the patterns of the performed action that may cause defects composing a historic data set, and uses analytical results to predict whether the subsequent actions are likely to generate defects composing another historic data set. Once actions with high probability of causing the defects are identified, stakeholders review these actions carefully and take appropriate corrective actions to create a fresh performed action. The fresh performed action is continually appended to the historic data sets of amending the defects to construct a new prediction model for further subsequent actions.

Abstract: A portable electronic device has various functions such as mobile communication, multimedia entertainment, and data processing. The device includes a main body installed with two keyboards and two slide rails, and two sub-bodies respectively equipped with a display. The sub-bodies are pivoted to each other and rotate through a shaft, and slide along slide rails through connecting members on the main body respectively. Therefore, the sub-bodies can be lifted relative to the main body through the shaft and the connecting members, so as to be optionally drawn close to the main body with the two displays facing the same direction, or to stand on the main body with the two displays facing opposite directions. Therefore, two different operating modes are achieved.

Abstract: An indolestyryl compound. The indolestyryl compound has formula (I): wherein Z1 comprises benzene, naphthalene, or heterocyclic ring containing O, S, or N, R2 comprises H, halogen atoms, C1-5 alkyl, nitro, ester, carboxyl, sulfo, sulfonamide, sulfuric ester, amide, C1-3 alkoxy, amino, alkylamino, cyano, C1-6 alkylsulfonyl, or C2-7 alkoxy carbonyl, R3, R4, R5, and R6 comprise H, alkyl, aralkyl, or heterocyclic ring containing O, S, or N, R7 and R8 comprise H or alkyl, R10 comprises H, alkyl, halogen atoms, nitro, hydroxyl, amino, ester, or substituted or non-substituted sulfonyl, W comprises carbon or nitrogen, Y comprises carbon, oxygen, sulfur, selenium, —NR, or —C(CH3)2, m is 1˜3, and X1 comprises an anionic group or an anionic organometallic complex, wherein R3 and R4 are joined to a nitrogen atom or R5 and R6 are joined together to form a ring, and R bonded to nitrogen is C1-5 alkyl.

Abstract: The present invention provides a microsatellite marker combination for identifying Lanyu pig breed, and the identification method thereof. The identification method comprises the following steps: (a) providing a genomic DNA sample obtained from a pig; (b) identifying the polymorphism of microsatellite markers of said genomic DNA sample; and (c) analyzing the results obtained from step (b) to determine the phylogenetic relationship between said pig and Lanyu pig.

Abstract: A service recommendation system, an operating method thereof, and a device containing computer software are provided. The system includes a label module, a service equipment, and a server device. The label module having an ID data of the user is carried by a user. The service equipment has a detection module and a control interface. The detection module obtains and outputs the ID data. The server device includes a database, a determination module, and a service setting module. The database stores a standard model and a user model. The determination module matches the ID data to the database. When the user model corresponding to the ID data exists in the database, the service setting module sets an operating mode according to the user model. When the user model corresponding to the ID data does not exist, the service setting module sets an operating mode according to the standard model.

Abstract: The invention relates to a transmitter-receiver system comprising at least three transmitters and at least a first receiver and a second receiver, wherein the receivers are connected to a computing device that is arranged to analyse signals that said receivers receive from said transmitters and to calculate length and attitude information of an imaginary baseline connecting said receivers depending on at least carrier phase information of said signals using interval analysis.