Abstract: Examples pertaining to re-transmission cyclic redundancy check (CRC) for polar coding incremental-redundancy hybrid automatic repeat request (IR-HARQ) are described. An apparatus (e.g., UE) encodes a plurality of information bits using a polar code to generate a polar code block (CB). The apparatus performs one or more transmissions of the polar CB using hybrid automatic repeat request (HARQ) by performing an initial transmission of the polar CB and performing a re-transmission of the polar CB with a re-transmission cyclic redundancy check (ReTX CRC).

Abstract: Examples pertaining to bit selection for polar coding incremental-redundancy hybrid automatic repeat request (IR-HARQ) are described. An apparatus (e.g., UE) generates a re-transmission polar code block (CB) in a polar incremental redundancy HARQ (IR-HARQ) procedure. The apparatus then transmits the re-transmission polar CB as a re-transmission of an initial transmission of an initial polar code carrying a plurality of information bits. In generating the re-transmission polar CB, the apparatus selects one or more re-transmission information bits from the plurality of information bits.

Abstract: Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. The fill layer is composed of noble metal (such as copper) and active metal (such as Zn). Then the fill metal layer is turned into a metal alloy after annealing. A dealloying is performed to the metal alloy to remove the active metal from the metal alloy while the noble metal remains to self-assemble into porous (nanoporous) structure metal. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using dielectric-to-dielectric direct bonding techniques, with the fill nanoporous metal layer in the recesses in one of the first and second interconnect structures.

Abstract: The present disclosure provides a copper nanowire composition. The a copper nanowire composition includes copper nanowire having associated alkylamine ligands with the structure HNR1R2. where R1 and R2 are independently hydrogen, alkyl or arylalkyl groups. The copper nanowire has an aspect ratio of at least 10. The associated alkylamine ligand is NR1R2 which contains at least 12 carbon atoms.

Abstract: Provided is a focalized microwave plasma reactor. The reactor utilizes a cylindrical microwave resonant cavity of the quasi-TM011 mode to focalize microwave power and to excite focalized microwave plasma for the processes of microwave plasma enhanced chemical vapour depositions.

Abstract: This invention is related to an anchor implantation system capable of being fixed on a bone and including an anchor and an awl. The anchor comprises an inner side, an outer side and a perforation in connection therewith, and the anchor further includes an accommodating portion and a thread portion. The accommodating portion and the thread portion are disposed at the inner side and the outer side of the anchor, respectively. One end of the awl penetrates the accommodating portion and protrudes from the perforation, and the shape of the cross section of the awl is non-circular. The awl is rotatable to drive the anchor, so that the anchor is screwed into the bone with the thread portion. The present disclosure provides a rotating awl with a non-circular shape in cross section to enlarge a pilot hole when drilling the bone, so that the anchor can be screwed into the bone while drilling.

Abstract: A fault localization method includes: obtaining user experience data, network topology data, and resource management data that are of a video service; where the network topology data is used to represent a connection relationship between network devices, and the resource management data is used to represent a connection relationship between user equipment and the network devices; determining a QoE experience indicator of a network device based on the user experience data, the network topology data, and the resource management data; and when QoE represented by the QoE experience indicator of the network device is lower than QoE represented by a device screening threshold, determining the network device as a possible questionable device.

Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.

Abstract: The invention provides compositions containing a stable crystalline form of brequinar and methods of making such composition. The invention also provides methods of using such compositions to treat a condition in a subject.

Abstract: Detection reagent is formed by reacting a catalyst and xanthydrol. The catalyst includes an active component loaded on a support, wherein the active component includes Pt, Ru, Rh, or a combination thereof, and the support includes carbon material, silica, alumina, or calcium carbonate. The detection reagent can be used to detect the primary amide compound.

Abstract: The invention provides compositions containing a stable crystalline form of brequinar and methods of making such composition. The invention also provides methods of using such compositions to treat a condition in a subject.

Abstract: Systems and methods for controlling optical powers of optical channels in an optical communications network comprising a plurality of nodes is described herein. The method comprises obtaining a reference optical power. The method also includes determining an optical power of an optical channel generated by an optical transmitter of a node. The method further includes applying an attenuation to the optical channel to reduce the optical power of the optical channel to the reference optical power. In some implementations, the method is performed by a network controller operating in the optical communications network.

Abstract: An electric motor controlling system used for vibration suppression of an electric vehicle is disclosed. The controlling system includes a PID-controller and a vibration suppression compensator. The PID-controller generates a basic torque command through performing a calculation based on input speed-error signal of the electric vehicle, the vibration suppression compensator generates a compensated torque command through performing a compensation gain procedure on the input speed-error signal. The vibration suppression compensator further receives a motor speed of the electric vehicle, sets its output as the compensated torque command when the motor speed is smaller than a preset active speed level, otherwise sets the output as 0. The controlling system generates an output torque command via adding up the basic torque command and the output of the vibration suppression compensator, and operates electric motor components of the electric vehicle according to the output torque command.

Abstract: A fan engagement structure for the fan to quickly and securely plug into or extract out of another structure. The fan engagement structure includes a frame main body. The frame main body has a first end and a second end. The frame main body has an internal hollow passage. The first end is mated with a fan. The frame main body has a first side and a second side. An engagement elastic plate extends from the first side. The surface of the engagement elastic plate has a latch section. The second side has a finger latch section, whereby the fan can be quickly and securely plugged into or extracted out of the other structure.

Abstract: An electronic device having a display panel is provided. The display panel includes a first pixel circuit, a second pixel circuit, a first signal line, a second signal line and a first buffer circuit unit. The second pixel circuit is adjacent to the first pixel circuit. The first signal line is electrically connected to the first pixel circuit. The second signal line is electrically connected to the second pixel circuit. The first buffer circuit unit is disposed between the first pixel circuit and the second pixel circuit. At least a portion of the first pixel circuit and at least a portion of the second pixel circuit are disposed between the first signal line and the second signal line.

Abstract: Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. The fill layer is composed of noble metal (such as copper) and active metal (such as Zn). Then the fill metal layer is turned into a metal alloy after annealing. A dealloying is performed to the metal alloy to remove the active metal from the metal alloy while the noble metal remains to self-assemble into porous (nanoporous) structure metal. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using dielectric-to-dielectric direct bonding techniques, with the fill nanoporous metal layer in the recesses in one of the first and second interconnect structures.

Abstract: A non-volatile memory includes a memory cell array, an amplifying circuit and a first multiplexer. The memory cell array includes m×n memory cells. The memory cell array is connected with a control line, m word lines and n local bit lines, wherein m and n are positive integers. The amplifying circuit includes n sensing elements. The n sensing elements are respectively connected between the n local bit lines and n read bit lines. The first multiplexer is connected with the n local bit lines and the n read bit lines. According to a first select signal, the first multiplexer selects one of the n local bit lines to be connected with a first main bit line and selects one of the n read bit lines to be connected with a first main read bit line.

Abstract: An illuminating module includes a light source assembly which includes a first lens unit. The light source assembly is configured to produce an illuminating beam, wherein the optical apparatus includes an optical modulation module and a light guiding module, the optical modulation module is parallel corresponding to the first lens unit, the illuminating beam passes through the optical modulation module to be an image beam having an image, and the image beam travels in the light guiding module, and leaves the light guiding module. The illuminating beam obliquely enters the optical modulation module.

Abstract: A semiconductor device structure includes a silicon substrate, a transistor, and an interconnection. The silicon substrate has a silicon surface. The transistor includes a gate structure, a first conductive region, a second conductive region, and a channel under the silicon surface. The interconnection is extended beyond the transistor and coupled to the first conductive region of the transistor. The interconnection is disposed under the silicon surface and isolated from the silicon substrate by an isolation region.

Abstract: A wire tension control device including a bobbin and a magnetic moment generator is provided. The bobbin is configured to provide a wire. The magnetic moment generator includes a stator and a rotor relatively rotatable with respect to the stator. The rotor is connected to the bobbin. When the bobbin drives the rotor to rotate, the magnetic moment generator generates a tension on the wire.