Abstract: This invention discloses a static random access memory (SRAM) cell comprising a pair of cross-coupled inverters connected between a positive supply voltage (Vcc) and a first node, a first NMOS transistor with a gate and drain connected to the first node and a source connected to a ground, and a second NMOS transistor with a drain and source connected to the first node and the ground, respectively, and a gate connected to a control-line.

Abstract: A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.

Abstract: An SRAM device includes: a first group of memory cells connected to a first local bit line and a first local complementary bit line for accessing data nodes thereof; a second group of memory cells connected to a second local bit line and a second local complementary bit line for accessing data nodes thereof; and a global bit line and a global complementary bit line connected to the first and second local bit lines for accessing data nodes of the first and second groups of memory cells, wherein the first local bit line, the first local complementary bit line, the second local bit line, the second local complementary bit line, the global bit line and the global complementary bit line are constructed on a same metallization level in the SRAM device.

Abstract: A crack prevention ring at the exterior edge of an integrated circuit prevents delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process.

Abstract: An SRAM device includes: a first group of memory cells connected to a first local bit line and a first local complementary bit line for accessing data nodes thereof; a second group of memory cells connected to a second local bit line and a second local complementary bit line for accessing data nodes thereof; and a global bit line and a global complementary bit line connected to the first and second local bit lines for accessing data nodes of the first and second groups of memory cells, wherein the first local bit line, the first local complementary bit line, the second local bit line, the second local complementary bit line, the global bit line and the global complementary bit line are constructed on a same metallization level in the SRAM device.

Abstract: A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.

Abstract: A method for operating a static random access memory (SRAM) cell includes providing the SRAM cell having a static read margin and a static write margin, wherein the static read margin is greater than the static write margin; applying a dynamic power to perform a write operation on the SRAM cell; and applying a static power to perform a read operation on the SRAM cell.

Abstract: An array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns includes a plurality of VSS lines connected to VSS nodes of the SRAM cells, with each VSS line connected to the SRAM cells in a same column. The plurality of VSS lines includes a first VSS line connected to a first column of the SRAM cells; and a second VSS line connected to a second column of the SRAM cells, wherein the first and the second VSS lines are disconnected from each other.

Abstract: A pseudo 6T SRAM cell design comprising eight transistors is provided. An embodiment comprises a pair of cross-coupled inverters and a pair of pass-gate transistors electrically coupled to each inverter through the substrate. Each pass-gate transistor has a different beta ratio from the other transistor in its pair, and the smaller beta ratio in the pair acts as a “read” port while the larger beta ratio in the pair acts as a “write” port. Two pairs of bit lines are connected to the pass-gate transistors. A variety of word lines are connected to the pass-gate transistors. In one embodiment, a single word line is connected to all of the pass-gate transistors. In another embodiment, a pair of word lines is connected to the pass-gate transistors. In yet another embodiment, a different word line is connected to each pass-gate transistor.

Abstract: A read-preferred SRAM cell includes a pull-up MOS device having a first drive current, a pull-down MOS device coupled to the pull-up MOS device, the pull-down MOS device having a second drive current, and a pass-gate MOS device having a third drive current coupled to the pull-up MOS device and the pull-down MOS device. The first drive current and the third drive current preferably have an ? ratio of between about 0.5 and about 1. The second drive current and the third drive current preferably have a ? ratio of between about 1.45 and 5.

Abstract: A method and system for verifying an integrated circuit design are provided. The method includes identifying cell tags embedded in a proposed integrated circuit design file, comparing cells identified as having a tag embedded therein to a cell library containing verified cell data to determine differences between the identified tagged cells and corresponding verified cell data from the cell library, and revising the proposed integrated circuit design to correct differences between the proposed integrated circuit design file and the verified cell data.

Abstract: An automated system and method for sanity checking an integrated circuit cell layout. The method generally includes searching the cell layout for a sub-area containing a predefined identifier, determining a reference cell layout corresponding to the predefined identifier, verifying the cell layout by comparing the cell layout to the reference cell layout to determine if a cell is of concern, and reporting the cell of concern to a user.

Abstract: An array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns includes a plurality of VSS lines connected to VSS nodes of the SRAM cells, with each VSS line connected to the SRAM cells in a same column. The plurality of VSS lines includes a first VSS line connected to a first column of the SRAM cells; and a second VSS line connected to a second column of the SRAM cells, wherein the first and the second VSS lines are disconnected from each other.

Abstract: The present invention relates generally to an integrated circuit (IC) design, and more particularly to a method and apparatus for providing an SRAM cell with improved read and write margins. The method includes providing a first negative voltage to a bit-line and a supply voltage to an inverse bit-line to increase a first potential difference between the bit-line and the inverse bit-line during a write operation of a logic “0.” The method also includes providing the first negative voltage to the inverse bit-line and the supply voltage to the bit-line to increase the first potential difference during a write operation of a data “1.

Abstract: The present invention relates generally to an integrated circuit (IC) design, and more particularly to a method and apparatus for providing an SRAM cell with improved read and write margins. The method includes providing a first negative voltage to a bit-line and a supply voltage to an inverse bit-line to increase a first potential difference between the bit-line and the inverse bit-line during a write operation of a logic “0.” The method also includes providing the first negative voltage to the inverse bit-line and the supply voltage to the bit-line to increase the first potential difference during a write operation of a data “1.

Abstract: A memory device is formed on a semiconductor-on-insulator (SOI) structure, the SOI structure including a substrate, an insulating layer on the substrate, and a semiconductor film on the insulating layer. The memory device includes a memory array in a memory region of the SOI structure, a plurality of first substrate contacts in the peripheral region of the memory device, and a plurality of second substrate contacts in the memory region of the SOI structure, wherein the first substrate contacts and the second substrate contacts are formed in and over the semiconductor film and in the insulating layer and are electrically connected to the substrate of the SOI structure.

Abstract: A circuit and method for providing an SRAM memory with reduced power consumption, the SRAM memory particularly useful for embedding SRAM memory with other logic and memory functions in an integrated circuit. A lower supply voltage is provided to the peripheral circuitry for the SRAM memory. A level shifter circuit is provided coupled to the lower power supply and outputting a higher supply voltage. An array of SRAM memory cells that may comprise 4T, 6T or 8T static RAM memory cells are coupled to the higher supply voltage during read and write operations. Operating the peripheral circuitry of the SRAM memory at the lower supply voltage achieves reduced power consumption for the SRAM memory and the integrated circuit.

Abstract: A circuit and method for providing an SRAM memory with reduced power consumption, the SRAM memory particularly useful for embedding SRAM memory with other logic and memory functions in an integrated circuit. A lower supply voltage is provided to the peripheral circuitry for the SRAM memory. A level shifter circuit is provided coupled to the lower power supply and outputting a higher supply voltage. An array of SRAM memory cells that may comprise 4 T, 6 T or 8 T static RAM memory cells are coupled to the higher supply voltage during read and write operations. Operating the peripheral circuitry of the SRAM memory at the lower supply voltage achieves reduced power consumption for the SRAM memory and the integrated circuit.

Abstract: A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.

Abstract: A semiconductor structure comprising an SRAM/inverter cell and a method for forming the same are provided, wherein the SRAM/inverter cell has an improved write margin. The SRAM/inverter cell includes a pull-up PMOS device comprising a gate dielectric over the semiconductor substrate, a gate electrode on the gate dielectric wherein the gate electrode comprises a p-type impurity and an n-type impurity, and a stressor formed in a source/drain region. The device drive current of the pull-up PMOS device is reduced due to the counter-doping of the gate electrode.