Abstract: A method (of generating a layout diagram) includes: generating a shell including wiring patterns in a first layer of metallization, the wiring patterns having long axes which are substantially aligned with corresponding tracks that extend in a first direction, the wiring patterns having a default arrangement which has, relative to the corresponding tracks, a first amount of free space; and refining the shell into a cell, the refining including selectively shrinking, in the first direction, one or more of the wiring patterns resulting in a second amount of free space, the second amount being greater than the first amount, increasing, in the first direction, one or more chosen ones of the wiring patterns (chosen patterns), and backfilling the second amount of free space with one or more of at least one dummy pattern or at least one wiring pattern.

Abstract: A semiconductor device comprising active areas and a structure. The active areas are formed as predetermined shapes on a substrate and arranged relative to a grid having first and second tracks which are substantially parallel to corresponding orthogonal first and second directions; The active areas are organized into instances of a first row having a first conductivity and a second row having a second conductivity. Each instance of the first row and of the second row includes a corresponding first and second number predetermined number of the first tracks. The structure has at least two contiguous rows including: at least one instance of the first row; and at least one instance of the second row. In the first direction, the instance(s) of the first row have a first width and the instance(s) of the second row a second width substantially different than the first width.

Abstract: In the present disclosure, a semiconductor structure includes an Mx-1 layer including a first dielectric layer and first metal features, wherein the first metal features include a first set of first metal features in a first region and a second set of first metal features in a second region, wherein the first set has a first pattern density and the second set has a second pattern density being greater than the first pattern density. The structure further includes a Vx layer disposed over the Mx-1 layer, the Vx layer including first vias contacting the first set of the first metal features. The structure further includes an Mx layer disposed over the Vx layer, the Mx layer including a fuse element, wherein the fuse element has a first thickness in the first region less than a second thickness in the second region.

Abstract: An integrated circuit includes a cell layer, a first metal layer, a first conductive via, and a second conductive via. The cell layer includes first and second cells, in which the first cell is separated from the second cell by a non-zero distance. The first metal layer includes a first conductive feature and a second conductive feature, the first conductive feature overlaps the first cell and does not overlap the second cell, and the second conductive feature overlaps the second cell and does not overlap the first cell, in which the first conductive feature is aligned with the second conductive feature along lengthwise directions of the first and second conductive features. The first conductive via interconnects the cell layer and the first conductive feature of the first metal layer. The second conductive via interconnects the cell layer and the second conductive feature of the first metal layer.

Abstract: A semiconductor device includes a component having a functionality. The semiconductor device further includes an interconnect structure electrically connected to the component. The interconnect structure is configured to electrically connect the component to a signal. The interconnect structure includes a first column of conductive elements and a second column of conductive elements. The interconnect structure further includes a first fuse on a first conductive level a first distance from the component, wherein the first fuse electrically connects the first column of conductive elements to the second column of conductive elements. The interconnect structure further includes a second fuse on a second conductive level a second distance from the component, wherein the second fuse electrically connects the first column of conductive elements to the second column of conductive elements, and the second distance is different from the first distance.

Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: The present disclosure describes structures and methods for a via structure for three-dimensional integrated circuit (IC) packaging. The via structure includes a middle portion that extends through a planar structure and a first end and a second end each connected to the middle portion and on a different side of the planar structure. One or more of the first end and the second end includes one or more of a plurality of vias and a pseudo metal layer.

Abstract: An interconnect structure includes a plurality of first pads, a plurality of second pads, a plurality of first conductive lines in a first layer, a plurality of second conductive lines in a second layer, and a plurality of nth conductive lines in an nth layer. The first pads and the second pads respectively are grouped into a first, a second and an nth group. Each of the first pads in first group is connected to one of the second pads in the first group by one of the first conductive lines. Each of the first pads in the second group is connected to one of the second pads in the second group by one of the second conductive lines. Each of the first pads in the nth group is connected to one of the second pads in the nth group by one of the nth conductive lines.

Abstract: A method of designing a device includes identifying a pin to be inserted into a first layer of the device, wherein the first layer has a plurality of first routing tracks, and each of the plurality of first routing tracks extend in a first direction. The method further includes identifying a blocking shape on a second layer different from the first layer, wherein the second layer has a plurality of second routing tracks, and each of the plurality of second routing tracks extends in a second direction different from the first direction. The method further includes determining at least one candidate location for the pin in the first layer based on the plurality of first routing tracks of the first layer. The method further includes setting a location for the pin in the first layer based on the determined at least one candidate location.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: An integrated circuit includes a first region. The integrated circuit further includes a first conductive structure in the first region, wherein the first conductive structure extends in a first direction. The integrated circuit further includes a second region adjacent to the first region. The integrated circuit further includes a power structure configured to supply a voltage to the first region or the second region, wherein the power structure includes a second conductive structure overlapping a boundary between the first region and the second region, the first conductive structure and the second conductive structure are aligned in a second direction different than the first direction, and the first conductive structure and the second conductive structure are separated from each other in the first direction.

Abstract: A method of updating a boundary space configuration of an IC layout cell includes identifying a pin in the IC layout cell as a boundary pin, determining that a boundary spacing of the boundary pin is capable of being increased, and based on the determination that the boundary spacing of the boundary pin is capable of being increased, modifying the IC layout cell by increasing the boundary spacing of the boundary pin. At least one of the identifying, determining, or modifying is executed by a processor of a computer.

Abstract: A method (of generating a layout diagram) includes: generating a cell (which represents a circuit) including first and second side boundaries which are substantially parallel and extend in a first direction, a first wiring pattern which is an intra-cell wiring pattern that extends in a second direction (substantially perpendicular to the first direction) and represents a conductor of a first signal which is internal to the circuit, and a second wiring pattern which extends in the first direction and represents a conductor of a second signal of the circuit; configuring the intra-cell wiring pattern so that a first end is located substantially a minimum boundary offset interior to the first side boundary; and configuring the second wiring pattern so that a portion thereof has a first end which extends exterior to the first side boundary by a protrusion length which is substantially greater than the minimum boundary offset.

Abstract: A package structure and a method for forming the same are provided. The package structure includes a die, a first molding surrounding the die, a first redistribution layer (RDL), an interposer disposed over the first RDL, a second molding surrounding the interposer, a first via, and a second RDL. The first RDL includes a first dielectric layer disposed over the die and the first molding, and a first interconnect structure surrounded by the first dielectric layer and electrically connected to the die. The interposer is electrically connected to the die through the first interconnect structure. The first via extends through and within the second molding and is adjacent to the interposer. The second RDL includes a second dielectric layer disposed over the interposer and the second molding, and a second interconnect structure surrounded by the second dielectric layer and electrically connected to the via and the interposer.

Abstract: Standard cell libraries include one or more standard cells and one or more corresponding standard cell variations. The one or more standard cell variations are different from their one or more standard cells in terms of geometric shapes, locations of the geometric shapes, and/or interconnections between the geometric shapes. The exemplary systems and methods described herein selectively choose from among the one or more standard cells and/or the one or more standard cell variations to form an electronic architectural design for an electronic device. In some situations, some of the one or more standard cells are unable to satisfy one or more electronic design constraints imposed by a semiconductor foundry and/or semiconductor technology node when placed onto the electronic device design real estate. In these situations, the one or more standard cell variations corresponding to these standard cells are placed onto the electronic device design real estate.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: An integrated circuit includes a first region and a first conductive structure in the first region, wherein the first conductive structure extends in a first direction. The integrated circuit further includes a first via coupled to the first conductive structure. The integrated circuit further includes a second region adjacent to the first region. The integrated circuit further includes a power structure configured to supply a voltage to the first or second region. The power structure includes a second conductive structure extending in the first direction and overlapping a boundary between the first region and the second region. The first conductive structure and the second conductive structure are aligned in a second direction. The first conductive structure and the second conductive structure are separated from each other in the first direction by a distance greater than a minimum spacing requirement of the first conductive structure and the second conductive structure.

Abstract: A computer readable storage medium encoded with program instructions, wherein, when the program instructions is executed by at least one processor, the at least one processor performs a method. The method includes selecting a cell, determining whether a pin has an area smaller than a predetermined area, allowing a pin access of the pin to extend in a corresponding patterning track of the pin access when the pin access when the pin is determined to be having an area smaller than the predetermined threshold, and causing an integrated circuit to be fabricated according to the pin.