Abstract: A method for adjusting exposure of a camera device is provided to include steps of: using first to Mth camera modules to continuously capture images in sync; reducing an exposure value of the first camera module according to a first current image captured at a latest time point by the first camera module until a first condition associated with the first current image is met; adjusting an exposure value of an ith camera module according to an ith current image, which is captured at the latest time point by the ith camera module, and an (i-1)th previous image, which is captured at a time point immediately previous to the latest time point by an (i-1)th camera module.

Abstract: A method of global connection routing includes determining a global connection tolerance of a cell for use in a circuit layout, wherein the cell comprises a plurality of pins, and a plurality of routing tracks are defined with respect to the cell. The method further includes determining a number of blocked tracks within the cell. The method further includes comparing the global connection tolerance with the number of blocked tracks. The method further includes adjusting a location of the cell within the circuit layout if the global connection tolerance and the number of blocked tracks fail to satisfy a predetermined condition.

Abstract: An integrated circuit includes at least one first conductive feature and at least one second conductive feature. The second conductive feature has at least one extension portion, and the extension portion of the second conductive feature is protruded from the projection of the first conductive feature on the second conductive feature. The integrated circuit further includes at least one third conductive feature, and at least one first conductive via electrically connecting the third conductive feature and the extension portion of the second conductive feature.

Abstract: In some embodiments, a first cell layout and a second cell layout are provided and combined into a third cell layout. Each of the first cell layout and the second cell layout includes a higher power line, a lower power line, an output pin, at least one up transistor and at least one down transistor formed to electrically couple the output pin to the higher power line and the output pin to the lower power line, respectively. The at least one up transistor and the at least one down transistor of the second cell layout include a gate line. For the combining, the gate line is non-selectively electrically coupled to the output pin of the first cell layout to form a first node. A design layout in which the third cell layout is used at different locations is generated.

Abstract: A method of forming an integrated circuit is disclosed. The method includes generating, by a processor, a layout design of the integrated circuit, outputting the integrated circuit based on the layout design, and removing a portion of a conductive structure of the integrated circuit to form a first conductive structure and a second conductive structure. Generating the layout design includes generating a standard cell layout having a set of conductive feature layout patterns, placing a power layout pattern with the standard cell layout according to at least one design criterion, and extending at least one conductive feature layout pattern of the set of conductive feature layout patterns in at least one direction to a boundary of the power layout pattern. The power layout pattern includes a cut feature layout pattern. The cut feature layout pattern identifies a location of the removed portion of the conductive structure of the integrated circuit.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: A method for outputting a first number of subsets of a layer pattern comprising a plurality of cells arranged in a row includes selecting subsets of cells from the plurality of cells, constructing a graph representation for each subset of cells, identifying graph representations that are not colorable with a first number of labels, identifying subsets of cells that correspond to the identified graph representations, changing a distance between cells in each of the identified subset of cells, wherein the changed distances are greater than the first spacing, labeling the graph representations with the first number of labels, and outputting subsets of the layer pattern to a machine readable storage medium for manufacturing a set of masks that is used to form a single, patterned layer. Each subset of the layer pattern represents a separate mask pattern and includes features of the layer pattern corresponding to a label in the labeled graph representations.

Abstract: Various implementations disclosed herein provide private network driven hosted network device management that enables more robust management of private networks that include such equipment. For example, in some implementations, a method of private network driven hosted network device management includes receiving a fetch request from a compliant device, wherein the fetch request indicates demand for at least one of new and updated configuration data and instructions. In turn, the method further includes assessing whether or not the new and updated configuration data and instructions, for the requesting compliant device, will conflict with local customizations and indicate potential disruption to connectivity and services in an associated private network, in order to produce an assessment result. The method also includes selectively generating a new configuration file including a suitable set of new and updated configuration data and instructions based on the assessment result.

Abstract: Among other things, techniques and systems for 3D modeling of a FinFET device and for detecting a variation for a design layout based upon a 3D FinFET model are provided. For example, a fin height of a FinFET device is determined based upon imagery of the FinFET device. The fin height and a 2D FinFET model for the FinFET device are used to create a 3D FinFET model. The 3D FinFET model takes into account the fin height, which is evaluated to identify fin height variations amongst FinFET devices within the design layout. For example, a fin height variation is determined based upon a proximity pattern density, a fin pitch, a gate length, or other parameters/measurements. A voltage threshold variation is determined based upon the fin height variation. This allows the design layout to be modified to decrease the variation.

Abstract: A method of global connection routing includes determining a global connection tolerance of a cell for use in a circuit layout, wherein the cell comprises a plurality of pins, and a plurality of routing tracks are defined with respect to the cell. The method further includes determining a number of blocked tracks within the cell. The method further includes comparing the global connection tolerance with the number of blocked tracks. The method further includes adjusting a location of the cell within the circuit layout if the global connection tolerance and the number of blocked tracks fail to satisfy a predetermined condition.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.

Abstract: Among other things, techniques and systems for 3D modeling of a FinFET device and for detecting a variation for a design layout based upon a 3D FinFET model are provided. For example, a fin height of a FinFET device is determined based upon imagery of the FinFET device. The fin height and a 2D FinFET model for the FinFET device are used to create a 3D FinFET model. The 3D FinFET model takes into account the fin height, which is evaluated to identify fin height variations amongst FinFET devices within the design layout. For example, a fin height variation is determined based upon a proximity pattern density, a fin pitch, a gate length, or other parameters/measurements. A voltage threshold variation is determined based upon the fin height variation. This allows the design layout to be modified to decrease the variation.

Abstract: A method includes retrieving a first component information of a secured portion of a package, wherein the first component information is encrypted. The step of retrieving includes decrypting the first component information. A thermal resistance-network (R-network) is generated from the decrypted first component information. A temperature map of the package is generated using the thermal R-network and a second component information of an unsecured portion of the package, wherein the secured portion and the unsecured portion are bonded to each other.

Abstract: A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.

Abstract: A computer implemented method comprises accessing a 3D-IC model stored in a tangible, non-transitory machine readable medium, inputting a power profile in a computer processor, generating a transient temperature profile based on the 3D-IC model, identifying a potential thermal violation at a corresponding operating time interval and a corresponding location of a plurality of points of the 3D-IC design, and outputting data representing the potential thermal violation. The 3D-IC model represents a 3D-IC design comprising a plurality of elements in a stack configuration. The power profile is applied to the plurality of elements of the 3D-IC design as a function of an operating time. The transient temperature profile includes temperatures at a plurality of points of the 3D-IC design as a function of an operating time.

Abstract: A computer implemented method comprises accessing a 3D-IC model stored in a tangible, non-transitory machine readable medium, inputting a power profile in a computer processor, generating a transient temperature profile based on the 3D-IC model, identifying a potential thermal violation at a corresponding operating time interval and a corresponding location of a plurality of points of the 3D-IC design, and outputting data representing the potential thermal violation. The 3D-IC model represents a 3D-IC design comprising a plurality of elements in a stack configuration. The power profile is applied to the plurality of elements of the 3D-IC design as a function of an operating time. The transient temperature profile includes temperatures at a plurality of points of the 3D-IC design as a function of an operating time.

Abstract: A method includes retrieving a first component information of a secured portion of a package, wherein the first component information is encrypted. The step of retrieving includes decrypting the first component information. A thermal resistance-network (R-network) is generated from the decrypted first component information. A temperature map of the package is generated using the thermal R-network and a second component information of an unsecured portion of the package, wherein the secured portion and the unsecured portion are bonded to each other.