Abstract: An integrated circuit includes at least one first conductive feature and at least one second conductive feature. The second conductive feature has at least one extension portion, and the extension portion of the second conductive feature is protruded from the projection of the first conductive feature on the second conductive feature. The integrated circuit further includes at least one third conductive feature, and at least one first conductive via electrically connecting the third conductive feature and the extension portion of the second conductive feature.

Abstract: An integrated circuit includes a cell layer, a first metal layer, and a first conductive via. The cell layer includes first and second cells, each of which is configured to perform a circuit function. The first metal layer is above the cell layer and includes a first conductive feature that extends from the first cell into the second cell and that is configured to receive a supply voltage. A first conductive via interconnects the cell layer and the metal layer.

Abstract: A method performed by at least one processor includes selecting a pin in a cell, determining a type of the pin, assigning a first pin access and a second pin access of the pin to a same patterning group at different patterning tracks when the pin is determined to be a cross-track pin, determining whether a pin access of a first pin and a pin access of a second pin disposed adjacent to the first pin in the cell are on a same patterning track, separating the first pin and the second pin from each other by a first predetermined distance when the pin accesses are determined to not be on a same patterning track, and separating the first pin and the second pin from each other by a second predetermined distance when the pin accesses are determined to be on a same patterning track.

Abstract: A method of forming an integrated circuit is disclosed. The method includes generating, by a processor, a layout design of the integrated circuit, outputting the integrated circuit based on the layout design, and removing a portion of a conductive structure of the integrated circuit to form a first conductive structure and a second conductive structure. Generating the layout design includes generating a standard cell layout having a set of conductive feature layout patterns, placing a power layout pattern with the standard cell layout according to at least one design criterion, and extending at least one conductive feature layout pattern of the set of conductive feature layout patterns in at least one direction to a boundary of the power layout pattern. The power layout pattern includes a cut feature layout pattern. The cut feature layout pattern identifies a location of the removed portion of the conductive structure of the integrated circuit.

Abstract: The present disclosure describes an example method for routing a standard cell with multiple pins. The method can include modifying a dimension of a pin of the standard cell, where the pin is spaced at an increased distance from a boundary of the standard cell than an original position of the pin. The method also includes routing an interconnect from the pin to a via placed on a pin track located between the pin and the boundary and inserting a wire cut between the interconnect and a pin from an adjacent standard cell. The method further includes verifying that the wire cut separates the interconnect from the pin from the adjacent standard cell by at least a predetermined distance.

Abstract: A method of generating a layout of an IC includes identifying a target pin in a first cell in an IC layout, the first cell being adjacent to a second cell and sharing a boundary with the second cell, and determining whether or not the target pin is capable of being extended into the second cell. Based on a determination that the target pin is capable of being extended into the second cell, the target pin is modified to include an extension into the second cell, the target pin thereby crossing the shared boundary. At least one of the identifying, determining, or modifying is executed by a processor of a computer.

Abstract: A method includes using a processor to placing a cell having a first conductive feature and a second conductive feature on an integrated circuit layout. A length of the first conductive feature is extended, by using the processor, to form a staggered configuration. A set of instructions for manufacturing an integrated circuit based upon the integrated circuit layout is generated, and the set of instructions is stored in a non-transitory machine readable storage medium.

Abstract: An integrated circuit includes a first region and a first conductive structure in the first region, wherein the first conductive structure extends in a first direction. The integrated circuit further includes a first via coupled to the first conductive structure. The integrated circuit further includes a second region adjacent to the first region. The integrated circuit further includes a power structure configured to supply a voltage to the first or second region. The power structure includes a second conductive structure extending in the first direction and overlapping a boundary between the first region and the second region. The first conductive structure and the second conductive structure are aligned in a second direction. The first conductive structure and the second conductive structure are separated from each other in the first direction by a distance greater than a minimum spacing requirement of the first conductive structure and the second conductive structure.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: Exemplary embodiments for multiple standard cell libraries are disclosed that include one or more standard cells and one or more corresponding standard cell variations. The one or more standard cell variations have similar functionality as their one or more standard cells but are different from their one or more standard cells in terms of geometric shapes, locations of the geometric shapes, and/or interconnections between the geometric shapes. The exemplary systems and methods described herein selectively choose from among the one or more standard cells and/or the one or more standard cell variations to form an electronic architectural design for analog circuitry and/or digital circuitry of an electronic device. In an exemplary embodiment, a semiconductor foundry and/or semiconductor technology node can impose one or more electronic design constraints on the placement of the one or more standard cells onto an electronic device design real estate.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A method for adjusting exposure of a camera device is provided to include steps of: using first to Mth camera modules to continuously capture images in sync; reducing an exposure value of the first camera module according to a first current image captured at a latest time point by the first camera module until a first condition associated with the first current image is met; adjusting an exposure value of an ith camera module according to an ith current image, which is captured at the latest time point by the ith camera module, and an (i?1)th previous image, which is captured at a time point immediately previous to the latest time point by an (i?1)th camera module.

Abstract: A device comprises a first interconnect structure over a first active device layer, a first power circuit in the first active device layer, a second active device layer over and in contact with the first interconnect structure, a first switch in the second active device layer, a second interconnect structure over and in contact with the second active device layer, a third active device layer over and in contact with the second interconnect structure, a second power circuit in the third active device layer and a third interconnect structure over and in contact with the third active device layer and connected to a power source, wherein the power source is configured to provide power to the first power circuit through the first switch.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: A semiconductor device comprising active areas and a structure. The active areas are formed as predetermined shapes on a substrate and arranged relative to a grid having first and second tracks which are substantially parallel to corresponding orthogonal first and second directions; The active areas are organized into instances of a first row having a first conductivity and a second row having a second conductivity. Each instance of the first row and of the second row includes a corresponding first and second number predetermined number of the first tracks. The structure has at least two contiguous rows including: at least one instance of the first row; and at least one instance of the second row. In the first direction, the instance(s) of the first row have a first width and the instance(s) of the second row a second width substantially different than the first width.

Abstract: A method of modifying a cell includes identifying a maximum overlapped pin group. The method further includes determining a number of pins in the maximum overlapped pin group. The method further includes determining a span region of the maximum overlapped pin group. The method further includes comparing the number of pins and the span region to determine a global tolerance of the cell. The method further includes increasing a length of at least one pin of the maximum overlapped pin group in response to the global tolerance failing to satisfy a predetermined threshold. The method further includes fabricating a mask based on the increased length of the at least one pin.

Abstract: A method performed by at least one processor includes selecting a pin in a cell, determining a type of the pin, assigning a first pin access and a second pin access of the pin to a same patterning group at different patterning tracks when the pin is determined to be a cross-track pin, determining whether a pin access of a first pin and a pin access of a second pin disposed adjacent to the first pin in the cell are on a same patterning track, separating the first pin and the second pin from each other by a first predetermined distance when the pin accesses are determined to not be on a same patterning track, and separating the first pin and the second pin from each other by a second predetermined distance when the pin accesses are determined to be on a same patterning track.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.