Abstract: An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 ?). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.

Abstract: A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

Abstract: A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (?S) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

Abstract: A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (?S) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Improved MRAM arrays and a method of forming the same are disclosed in which a bit line has thinner portions formed over MTJs and thicker portions therebetween. Bottom electrodes are formed in a first insulation layer on a substrate and then MTJs and a coplanar second insulation layer are formed thereon. After a second conductive layer comprised of lower metal lines is formed above the MTJs, a trench is formed in a stack of insulation layers above portions of the lower metal lines. A barrier layer and upper metal layer are sequentially deposited and then planarized to form a filled trench that effectively increases a bit line thickness. The lower metal layer is a thin bit line in regions over MTJs. The method may also comprise forming word lines on an insulation layer that are aligned over the MTJs and perpendicular to the bit lines.

Abstract: Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

Abstract: Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.

Abstract: An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform manner across the array.

Abstract: A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

Abstract: A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

Abstract: A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: The present invention disclose a system and method for testing wireless devices, by which two wireless device-under-test (DUTs) is enabled to transmit and receive signal from each other such that the two DUTs can be test simultaneously for achieving the objects of reducing time consumed for testing a batch of DUTs and also reducing the amount of procedures required for cabling the DUTs to the test equipments of the test system.

Abstract: A magnetic head comprises a pole layer, a gap layer, a shield layer, a nonmagnetic layer, and a coil. The shield layer incorporates: a first layer disposed on the gap layer; a second layer disposed on the first layer; a two layered coupling layer disposed on a region of the pole layer where an opening of the gap layer is formed; and a third layer disposed to couple the second layer to the coupling layer. The first layer defines throat height TH. The nonmagnetic layer is disposed on a side of the first layer. The coil is disposed on the nonmagnetic layer on a side of the second layer.

Abstract: A method and system for providing a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and at least one programmable current source. Each of the plurality of magnetic memory cells includes a first magnetic element. The programmable current source(s) are for programming a portion of the plurality of magnetic memory cells. Each of the programmable current source(s) includes a controller and a current source coupled to the controller. The controller is for determining a current provided by the current source and includes at least a second magnetic element. The second magnetic element(s) are substantially the same as the first magnetic element. The controller determines the current provided by the current source based on the at least the second magnetic element.

Abstract: A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

Abstract: A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. In one aspect, the method and system also include utilizing at least one storage for storing a state of each of the magnetic storage cells determined during a read operation made during a write operation. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segment at substantially the same time as the portion of the magnetic cells are written.

Abstract: An inverted-F antenna having a reinforced fixing structure is disclosed for benefiting antenna diversity. The inverted-F antenna is composed of a base board (such as a printed circuit board), a radiator and at least one supporting member each having a beveled fixing foot, wherein the shape of the radiator can be changed in accordance with various bending directions, such as a L shape, a U shape or a Z shape. The reinforced fixing structure of the inverted-F antenna further includes a dielectric material (such as foam adhesive) used for partially filling in the gap between the radiator and the base board, thereby reinforcing the strength of fixing each supporting member to the base board.

Abstract: An inverted-F antenna having a reinforced fixing structure is disclosed for benefiting antenna diversity. The inverted-F antenna is composed of a base board (such as a printed circuit board), a radiator and at least one supporting member each having a beveled fixing foot, wherein the shape of the radiator can be changed in accordance with various bending directions, such as a L shape, a U shape or a Z shape. The reinforced fixing structure of the inverted-F antenna further includes a dielectric material (such as foam adhesive) used for partially filling in the gap between the radiator and the base board, thereby reinforcing the strength of fixing each supporting member to the base board.