Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, a fourth repeating unit, and a fifth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), the fourth repeating unit has a structure of Formula (IV), and the fifth repeating unit has a structure of Formula (V), a structure of Formula (VI), or a structure of Formula (VII) wherein A1, A2, A3, A4, X1, Z1, R1, R2, R3 and Q are as defined in the specification.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a fourth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), and the fourth repeating unit has a structure of Formula (IV), a structure of Formula (V) or a structure of Formula (VI) wherein A1, A2, A3, Z1, R1, R2, R3 and Q are as defined in the specification.

Abstract: An RF testing method is applied between a testing instrument and multiple devices under test at least including a first DUT and a second DUT. The testing instrument includes a signal generator and a signal analyzer. A sync signal is sent to the testing instrument and the first DUT, so that the first DUT occupies the signal generator to receive a testing signal from the signal generator. The first DUT sends an uplink signal to the signal analyzer based on the testing signal to occupy the signal analyzer for signal analysis at a first point in time. The sync signal is sent to the testing instrument and the second DUT, so that the second DUT occupies the signal generator to receive the testing signal from the signal generator at a second point in time. The first point in time is parallel to the second point in time.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.

Abstract: A testing circuitry includes an on-chip clock controller circuit and a first clock adjustment circuit. The on-chip clock controller circuit is configured to generate an internal clock signal in response to a reference clock signal, a scan enable signal, a plurality of enable bits, and a scan mode signal, and generate a first control signal in response to the scan enable signal, a plurality of first bits, and the reference clock signal. The first clock adjustment circuit is configured to generate a first test clock signal according to the first control signal and the internal clock signal, in order to test a multicycle path circuit. The plurality of first bits are to set a first pulse of the first test clock signal, in order to prevent the multicycle path circuit from occurring a timing violation.

Abstract: A scan test device includes a scan flip flop circuit and a clock gating circuit. The scan flip flop circuit is configured to receive a scan input signal according to a scan clock signal, and to output the received scan input signal to be a test signal. The clock gating circuit is configured to selectively mask the scan clock signal according to a predetermined bit of the test signal and a scan enable signal, in order to generate a test clock signal for testing at least one core circuit.

Abstract: A test circuit includes a scan chain and a wrapper chain. The wrapper chain shifts in a test pattern according a first clock. The scan chain is coupled to the wrapper chain via a logic combination of a circuit under test. The wrapper chain is configured to transmit the test pattern to the scan chain via the logic combination according to a second clock in a capture phase. The wrapper chain includes a first, a second wrapper cell, and an asynchronous register. The first wrapper cell sequentially shifts in two bits of the test pattern in the shift-in phase. The second wrapper cell shifts in the first bit of the test pattern in the shift-in phase. The asynchronous register conducts the first wrapper cell to the second wrapper cell in the shift-in phase, and latches the second wrapper cell in the capture phase.

Abstract: A semiconductor device includes a control signal generating circuit, a first circuit and a second circuit. The control signal generating circuit is configured to generate a control signal. The first circuit is coupled to the control signal generating circuit and configured to receive the control signal and generate a first test pulse signal according to the control signal. The second circuit is coupled to the control signal generating circuit and the first circuit and configured to receive the control signal and generate a second test pulse signal according to the control signal. The first circuit is comprised in the first block. The second circuit is comprised in the second block. The first block and the second block are connected with each other via one or more interconnection logics and timing of the first test pulse signal and timing of the second test pulse signal are synchronized.

Abstract: A curved display and a method for binding a cover glass of the curved display are provided. The curved display includes a display module, a frame body and a cover glass. The frame body has a first flat surface and a second flat surface opposite to the first flat surface, in which the first flat surface is adhered to the display module. The cover glass has a binding flat surface and an application surface opposite to the binding flat surface, in which the binding flat surface is adhered to the second flat surface of the frame body, and the application surface is a surface with curvature. The second flat surface of the frame body is set with a first alignment mark, and the binding flat surface of the cover glass is set with a second alignment mark, and the first alignment mark corresponds to the second alignment mark.

Abstract: A scan test device includes a scan flip flop circuit and a clock gating circuit. The scan flip flop circuit is configured to receive a scan input signal according to a scan clock signal, and to output the received scan input signal to be a test signal. The clock gating circuit is configured to selectively mask the scan clock signal according to a predetermined bit of the test signal and a scan enable signal, in order to generate a test scan clock signal for testing at least one core circuit.

Abstract: An electronic device test database generating method, comprising: (a) acquiring cell layout information of a target electronic device; (b) generating possible defect location information of the target electronic device according to the cell layout information, wherein the possible defect location information comprises at least one possible defect location of the target electronic device; (c) testing the target electronic device according to the possible defect location information to generate a testing result; and (d) generating an electronic device test database according to the testing result.

Abstract: A wafer testing machine and a method for training an artificial intelligence (AI) model to test wafers are provided. The wafer contains multiple dies. The method includes the following steps of: determining a target die from the dies; selecting multiple reference dies close to the target die based on the target die and a preset range; generating a main training data which includes a measured value of the target die and the measured value of each reference die; generating an auxiliary training data which indicates whether each reference die is a passed die or a failed die; and training the AI model using the main training data and the auxiliary training data.