Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

Abstract: A virtual cinema interactive system includes a server and at least two user terminals. The user terminals communicate with the server. An host can invite his friends to watch film together on a virtual cinema displayed on each user terminal, and distribution of virtual cinema seating, talking between film watchers, and film watcher reactions to the film can be recognized and facilitated. A virtual cinema interactive method is also disclosed.

Abstract: A virtual cinema interactive system includes a server and at least two user terminals. The user terminals communicate with the server. An inviter can invite his friends to watch film together on a virtual cinema displayed on each user terminal, and distribution of virtual cinema seating, talking between film watchers, and film watcher reactions to the film can be recognized and facilitated. A virtual cinema interactive method is also disclosed.

Abstract: A laser radar device includes a transmitter, a receiver, and an optical coupler. The optical coupler includes an incident surface, an emergent surface, and a reflective surface. At least one convergent lens is positioned at the incident surface. The convergent lens is aligned with the transmitter and the receiver. At least one collimating lens is positioned at the emergent surface. The at least one collimating lens corresponds to the at least one convergent lens. An angle between the reflective surface and the incident surface is equal to an angle between the reflective surface and the emergent surface.

Abstract: A laser distance measuring device for measuring a distance between device and object comprises a plurality of substrates. Each substrate comprises a first surface carrying a laser diode, a photo diode, and a lens module. The laser diode and the photo diode are located at a side of the lens module away from the object. The laser diode emits lasers to the object, and the photo diode receives laser which is reflected by the object. The lens module focuses the outgoing and the incoming laser. The plurality of substrates being arranged in a divergent form improves Field of View of the measuring device, and the base supporting the substrates can be rotated to improve accuracy of the device in terms of multiple times of flight calculations applied to each substrate.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: A virtual cinema interactive system includes a server and at least two user terminals. The user terminals communicate with the server. An host can invite his friends to watch film together on a virtual cinema displayed on each user terminal, and distribution of virtual cinema seating, talking between film watchers, and film watcher reactions to the film can be recognized and facilitated. A virtual cinema interactive method is also disclosed.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: A virtual cinema interactive system includes a server and at least two user terminals. The user terminals communicate with the server. An inviter can invite his friends to watch film together on a virtual cinema displayed on each user terminal, and distribution of virtual cinema seating, talking between film watchers, and film watcher reactions to the film can be recognized and facilitated. A virtual cinema interactive method is also disclosed.

Abstract: A method for displaying multiple independent sub-screens on a single display of an electronic device comprises step of capturing at least one facial feature of at least one operator and at least one sub-screen controlling gesture posed by the at least one operator within a predefine area of an electronic device. The electronic device is controlled to establish, merge, or delete at least one sub-screen according to the captured at least one sub-screen controlling gesture. The electronic device is controlled to store a relationship between the at least one facial feature of the operator and the sub-screen. A device of displaying sub-screen is also provided.

Abstract: A method for controlling distribution of multiple dub-screens on a single display, applied on an electronic device. The sub-screen at least comprises a first sub-screen and a second sub-screen. The first sub-screen at least comprises a first operator. The second sub-screen comprises a second operator. The method comprises certain steps. Tracking a first head position of the first operator relative to the first sub-screen, and calculating a first face center point of the first head position. Tracking a second head position of the second operator relative to the second sub-screen, and calculating a second face center point of the second head position. Adjusting distributions of the first sub-screen and the second sub-screen according to the first face center point and the second face center point. A device of controlling distribution of multiple sub-screens is provided.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: A virtual cinema interactive system includes a server and at least two user terminals. The user terminals communicate with the server. An inviter can invite his friends to watch film together on a virtual cinema displayed on each user terminal, and distribution of virtual cinema seating, talking between film watchers, and film watcher reactions to the film can be recognized and facilitated. A virtual cinema interactive method is also disclosed.

Abstract: A virtual cinema interactive system includes a server and at least two user terminals. The user terminals communicate with the server. An inviter can invite his friends to watch film together on a virtual cinema displayed on each user terminal, and distribution of virtual cinema seating, talking between film watchers, and film watcher reactions to the film can be recognized and facilitated. A virtual cinema interactive method is also disclosed.