Abstract: A circuit board includes a circuit substrate, a solder, and a surrounding portion. The circuit substrate includes a connecting pad. The solder is formed on a surface of the connecting pad. The surrounding portion is formed on the surface of the connecting pad and cooperates with the connecting pad to form a groove receiving the solder. The surrounding portion surrounds the solder and is spaced from the solder. A method for manufacturing a circuit board is also provided.

Abstract: A circuit board includes a circuit substrate, at least one metal pad, and a tin bar corresponding to each of the at least one metal pad. Each of the at least one metal pad is formed on a side of the circuit substrate and is electrically connected to the circuit substrate. A surface of the metal pad facing away from the circuit substrate is recessed toward the circuit substrate to from a recess. The tin bar is received in the recess. A method for manufacturing a circuit board is also provided.

Abstract: A multi-target vital sign detection system includes a transmitter, a receiver and a processor. The transmitter is configured to transmit a millimeter wave signal to a detection area, and the receiver is configured to receive a reflecting millimeter wave signal reflected by a plurality of targets in the detection area. The processor is configured to: generate signal strength versus distance data by analyzing the received reflecting millimeter wave signal; perform an extreme value reserving process to generate signal extreme value versus distance data; perform a peak search algorithm to obtain a peak list including a plurality of peak values and a plurality of corresponding peak distances; generate a distance array including a plurality of distance variables; and perform a vital sign detection algorithm to generate multiple sets of vital sign data.

Abstract: A multi-target vital sign detection system includes a transmitter, a receiver and a processor. The transmitter is configured to transmit a millimeter wave signal to a detection area, and the receiver is configured to receive a reflecting millimeter wave signal reflected by a plurality of targets in the detection area. The processor is configured to: generate signal strength versus distance data by analyzing the received reflecting millimeter wave signal; perform an extreme value reserving process to generate signal extreme value versus distance data; perform a peak search algorithm to obtain a peak list including a plurality of peak values and a plurality of corresponding peak distances; generate a distance array including a plurality of distance variables; and perform a vital sign detection algorithm to generate multiple sets of vital sign data.

Abstract: An anti-reflection structure includes a substrate including a planar portion, a protrusion portion disposed over the planar portion, and a coating layer, wherein the protrusion portion is integrated with the planar portion, and the coating layer conformably covers the planar portion and the protrusion portion.

Abstract: A light-emitting element comprises: a first semiconductor stack having a first conductivity type; an active layer formed on the first semiconductor stack; a second semiconductor stack having a second conductivity type formed on the active layer; and a first current-spreading layer having the first conductivity type interposed in the second semiconductor stack.

Abstract: A light-emitting element comprises: a first semiconductor stack having a first conductivity type; an active layer formed on the first semiconductor stack; a second semiconductor stack having a second conductivity type formed on the active layer; and a first current-spreading layer having the first conductivity type interposed in the second semiconductor stack.

Abstract: An anti-reflection structure includes a substrate including a planar portion, a protrusion portion disposed over the planar portion, and a coating layer, wherein the protrusion portion is integrated with the planar portion, and the coating layer conformably covers the planar portion and the protrusion portion.

Abstract: A luminous photo frame includes an outer frame assembly having a light transmittable section, a reflector plate arranged in the outer frame assembly, a light guide plate arranged between the reflector plate and the light transmittable section, a light emission element opposing an edge of the light guide plate, a brightness enhancement film arranged between the light guide plate and the light transmittable section, and a light-transmitting surface panel mounted to the outer frame assembly to be adjacent to the light transmittable section. To use, a traditional photo is first deposited at one side of the light-transmitting surface panel and the light emission element is activated to emit light, which is guided and spread by the light guide plate and reflected by the reflector plate for projecting toward the light transmittable section to pass through the brightness enhancement film and transmit through the light transmittable section and the traditional photo.

Abstract: A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.

Abstract: A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.

Abstract: The method and circuit for testing a TSV of the present invention exploit the electronic property of the TSV under test. The TSV under test is first reset to a first state, and is then sensed at only one end to determine whether the TSV under test follows the behavior of a normal TSV, wherein the reset and sense steps are performed at only one end of the TSV under test. If the TSV under test does not follow the behavior of a normal TSV, the TSV under test is determined faulty.

Abstract: A three-phase power supply with a three-phase three-level DC/DC converter includes a full-bridge thyristor converter with three-set four in-series power switch elements, a three-phase isolated transformer, a full-bridge rectifier, a rectifying circuit, and a low-pass filtering circuit. The three-phase power supply is used to deliver power energy from the AC input voltage to the load. The power switch elements, which separated to each other at 120-degree phase differences, are controlled through a phase shift scheme. Therefore, the three-level circuit structure is provided to reduce withstanding voltage of the power switch elements, further the zero-voltage switching (ZVS) is achieved by the isolated transformer and the power switch elements to increase the efficiency of the DC/DC converter.

Abstract: Disclosed herein is a method for preparing a coumarin compound of formula (F), in which R1, R2, and R3 are independently H, C1˜C7 alkoxy, C1˜C7 alkyl, phenoxy, benzyloxy, or a halogen atom; R4 is an alkyl group; and Ar is an optionally substituted aryl group, the method including: treating a chromene compound having the following formula (E) with an acid in the presence of water. A chromene compound of formula (E) and a method for preparing the chromene compound of formula (E) are also disclosed.

Abstract: A data storage system and the backup method thereof are provided. The data storage system includes a storage device and a storage controller. The storage controller is coupled to the storage device and used for dividing the storage device into a primary data block and a backup data block and setting the data storage system to operate under one of a real time backup mode and a non-real time backup mode. Under the non-real time backup mode, the storage controller backups the data stored in the primary data block to the backup data block when the data storage system is idle.

Abstract: A three-phase power supply with a three-phase three-level DC/DC converter includes a full-bridge thyristor converter with three-set four in-series power switch elements, a three-phase isolated transformer, a full-bridge rectifier, a rectifying circuit, and a low-pass filtering circuit. The three-phase power supply is used to deliver power energy from the AC input voltage to the load. The power switch elements, which separated to each other at 120-degree phase differences, are controlled through a phase shift scheme. Therefore, the three-level circuit structure is provided to reduce withstanding voltage of the power switch elements, further the zero-voltage switching (ZVS) is achieved by the isolated transformer and the power switch elements to increase the efficiency of the DC/DC converter.

Abstract: Disclosed herein is a method for preparing a coumarin compound of formula (F), in which R1, R2, and R3 are independently H, C1˜C7 alkoxy, C1˜C7 alkyl, phenoxy, benzyloxy, or a halogen atom; R4 is an alkyl group; and Ar is an optionally substituted aryl group, the method including: treating a chromene compound having the following formula (E) with an acid in the presence of water. A chromene compound of formula (E) and a method for preparing the chromene compound of formula (E) are also disclosed.

Abstract: A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.

Abstract: A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.

Abstract: A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.