Patents by Inventor Pradeep Srinivasan

Pradeep Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200264377
    Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.
    Type: Application
    Filed: May 5, 2020
    Publication date: August 20, 2020
    Inventors: Hooman ABEDIASL, Amit Singh NAGRA, Andrew George RICKMAN, Thomas Pierre SCHRANS, Pradeep SRINIVASAN, Andrea TRITA, Aaron John ZILKIE
  • Patent number: 10677989
    Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: June 9, 2020
    Assignee: ROCKLEY PHOTONICS LIMITED
    Inventors: Hooman Abediasl, Andrew George Rickman, Amit Singh Nagra, Andrea Trita, Thomas Pierre Schrans, Aaron John Zilkie, Pradeep Srinivasan
  • Publication number: 20200133091
    Abstract: A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.
    Type: Application
    Filed: April 24, 2019
    Publication date: April 30, 2020
    Inventors: DongYoon Oh, David Arlo Nelson, Pradeep Srinivasan, Amit Singh Nagra, Aaron John Zilkie, Jeffrey Driscoll, Aaron L. Birkbeck
  • Publication number: 20200124878
    Abstract: A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.
    Type: Application
    Filed: August 23, 2019
    Publication date: April 23, 2020
    Inventors: Guomin Yu, Hooman Abediasl, Aaron L. Birkbeck, Jeffrey Driscoll, Haydn Frederick Jones, Damiana Lerose, Amit Singh Nagra, David Arlo Nelson, DongYoon Oh, Pradeep Srinivasan, Aaron John Zilkie
  • Publication number: 20190310496
    Abstract: An optoelectronic device and an array comprising a plurality of the same. The device(s) comprising: an optically active region with an electrode arrangement for applying an electric field across the optically active region; a first curved waveguide, arranged to guide light into the optically active region; and a second curved waveguide, arranged to guide light out of the optically active region; wherein the first curved waveguide and the second curved waveguide are formed of a material having a different band-gap to a band-gap of the optically active region, and wherein the overall guided path formed by the first curved waveguide, the optically active region and the second curved waveguide is U-shaped.
    Type: Application
    Filed: April 4, 2019
    Publication date: October 10, 2019
    Inventors: Aaron John Zilkie, Andy McKee, Pradeep Srinivasan
  • Publication number: 20190278111
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 12, 2019
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Jones
  • Patent number: 10404035
    Abstract: A laser source. In some embodiments, a multiple-output laser source includes a plurality of lasers, and a coupler having a plurality of inputs and a plurality of outputs. Each of the inputs of the coupler is connected to an output of a respective laser, and each of the outputs of the coupler is connected to an output of the multiple-output laser source. In some embodiments the laser source is connected to other equipment with a single composite connector for making an optical connection and a plurality of electrical connections.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: September 3, 2019
    Assignee: Rockley Photonics Limited
    Inventors: Thomas Pierre Schrans, Nicholas Kucharewski, Pradeep Srinivasan
  • Patent number: 10401656
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: September 3, 2019
    Assignee: Rockley Photonics Limited
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
  • Publication number: 20190179177
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
    Type: Application
    Filed: February 13, 2019
    Publication date: June 13, 2019
    Inventors: Andrew Rickman, Aaron Zilkie, Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Jones
  • Publication number: 20190139950
    Abstract: An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.
    Type: Application
    Filed: November 19, 2018
    Publication date: May 9, 2019
    Inventors: Guomin Yu, Amit Singh Nagra, Damiana Lerose, Hooman Abediasl, Pradeep Srinivasan, Joyce Kai See Poon, Zheng Yong, Haydn Frederick Jones
  • Patent number: 10222677
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: March 5, 2019
    Assignee: Rockley Photonics Limited
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones, Andrew George Rickman, Aaron John Zilkie
  • Patent number: 10216059
    Abstract: An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: February 26, 2019
    Assignee: Rockley Photonics Limited
    Inventors: Guomin Yu, Aaron John Zilkie, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
  • Publication number: 20190041667
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.
    Type: Application
    Filed: September 27, 2018
    Publication date: February 7, 2019
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
  • Patent number: 10185203
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: January 22, 2019
    Assignee: Rockley Photonics Limited
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
  • Publication number: 20190011639
    Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 10, 2019
    Inventors: Hooman ABEDIASL, Andrew George RICKMAN, Amit Singh NAGRA, Andrea TRITA, Thomas Pierre SCHRANS, Aaron John ZILKIE, Pradeep SRINIVASAN
  • Publication number: 20190011799
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.
    Type: Application
    Filed: September 8, 2017
    Publication date: January 10, 2019
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
  • Publication number: 20180366915
    Abstract: A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.
    Type: Application
    Filed: June 13, 2018
    Publication date: December 20, 2018
    Inventors: Aaron John Zilkie, Pradeep Srinivasan
  • Patent number: 10133094
    Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: November 20, 2018
    Assignee: Rockley Photonics Limited
    Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
  • Publication number: 20180294621
    Abstract: A laser source. In some embodiments, a multiple-output laser source includes a plurality of lasers, and a coupler having a plurality of inputs and a plurality of outputs. Each of the inputs of the coupler is connected to an output of a respective laser, and each of the outputs of the coupler is connected to an output of the multiple-output laser source. In some embodiments the laser source is connected to other equipment with a single composite connector for making an optical connection and a plurality of electrical connections.
    Type: Application
    Filed: April 5, 2018
    Publication date: October 11, 2018
    Inventors: Thomas Pierre Schrans, Nicholas Kucharewski, Pradeep Srinivasan
  • Publication number: 20180217469
    Abstract: An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).
    Type: Application
    Filed: March 21, 2018
    Publication date: August 2, 2018
    Inventors: Guomin Yu, Aaron John Zilkie, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones