Patents by Inventor Pradeep Srinivasan
Pradeep Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200264377Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.Type: ApplicationFiled: May 5, 2020Publication date: August 20, 2020Inventors: Hooman ABEDIASL, Amit Singh NAGRA, Andrew George RICKMAN, Thomas Pierre SCHRANS, Pradeep SRINIVASAN, Andrea TRITA, Aaron John ZILKIE
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Patent number: 10677989Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.Type: GrantFiled: July 3, 2018Date of Patent: June 9, 2020Assignee: ROCKLEY PHOTONICS LIMITEDInventors: Hooman Abediasl, Andrew George Rickman, Amit Singh Nagra, Andrea Trita, Thomas Pierre Schrans, Aaron John Zilkie, Pradeep Srinivasan
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Publication number: 20200133091Abstract: A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.Type: ApplicationFiled: April 24, 2019Publication date: April 30, 2020Inventors: DongYoon Oh, David Arlo Nelson, Pradeep Srinivasan, Amit Singh Nagra, Aaron John Zilkie, Jeffrey Driscoll, Aaron L. Birkbeck
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Publication number: 20200124878Abstract: A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.Type: ApplicationFiled: August 23, 2019Publication date: April 23, 2020Inventors: Guomin Yu, Hooman Abediasl, Aaron L. Birkbeck, Jeffrey Driscoll, Haydn Frederick Jones, Damiana Lerose, Amit Singh Nagra, David Arlo Nelson, DongYoon Oh, Pradeep Srinivasan, Aaron John Zilkie
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Publication number: 20190310496Abstract: An optoelectronic device and an array comprising a plurality of the same. The device(s) comprising: an optically active region with an electrode arrangement for applying an electric field across the optically active region; a first curved waveguide, arranged to guide light into the optically active region; and a second curved waveguide, arranged to guide light out of the optically active region; wherein the first curved waveguide and the second curved waveguide are formed of a material having a different band-gap to a band-gap of the optically active region, and wherein the overall guided path formed by the first curved waveguide, the optically active region and the second curved waveguide is U-shaped.Type: ApplicationFiled: April 4, 2019Publication date: October 10, 2019Inventors: Aaron John Zilkie, Andy McKee, Pradeep Srinivasan
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Publication number: 20190278111Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.Type: ApplicationFiled: May 22, 2019Publication date: September 12, 2019Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Jones
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Patent number: 10404035Abstract: A laser source. In some embodiments, a multiple-output laser source includes a plurality of lasers, and a coupler having a plurality of inputs and a plurality of outputs. Each of the inputs of the coupler is connected to an output of a respective laser, and each of the outputs of the coupler is connected to an output of the multiple-output laser source. In some embodiments the laser source is connected to other equipment with a single composite connector for making an optical connection and a plurality of electrical connections.Type: GrantFiled: April 5, 2018Date of Patent: September 3, 2019Assignee: Rockley Photonics LimitedInventors: Thomas Pierre Schrans, Nicholas Kucharewski, Pradeep Srinivasan
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Patent number: 10401656Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.Type: GrantFiled: September 27, 2018Date of Patent: September 3, 2019Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
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Publication number: 20190179177Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.Type: ApplicationFiled: February 13, 2019Publication date: June 13, 2019Inventors: Andrew Rickman, Aaron Zilkie, Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Jones
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Publication number: 20190139950Abstract: An optoelectronic device. The optoelectronic device operable to provide a PAM-N modulated output, the device comprising: M optical modulators, M being an integer greater than 1, the M optical modulators being arranged in a cascade, the device being configured to operate in N distinct transmittance states, as a PAM-N modulator, wherein, in each transmittance state of the N distinct transmittance states, each of the M optical modulators has applied to it a respective control voltage equal to one of: a first voltage or a second voltage. One or more of the modulators may include a substrate; a crystalline cladding layer, on top of the substrate; and an optically active region, above the crystalline cladding layer. The crystalline cladding layer may have a refractive index which is less than a refractive index of the optically active region.Type: ApplicationFiled: November 19, 2018Publication date: May 9, 2019Inventors: Guomin Yu, Amit Singh Nagra, Damiana Lerose, Hooman Abediasl, Pradeep Srinivasan, Joyce Kai See Poon, Zheng Yong, Haydn Frederick Jones
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Patent number: 10222677Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.Type: GrantFiled: December 6, 2017Date of Patent: March 5, 2019Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones, Andrew George Rickman, Aaron John Zilkie
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Patent number: 10216059Abstract: An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).Type: GrantFiled: March 21, 2018Date of Patent: February 26, 2019Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Aaron John Zilkie, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
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Publication number: 20190041667Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.Type: ApplicationFiled: September 27, 2018Publication date: February 7, 2019Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
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Patent number: 10185203Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.Type: GrantFiled: September 8, 2017Date of Patent: January 22, 2019Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
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Publication number: 20190011639Abstract: A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.Type: ApplicationFiled: July 3, 2018Publication date: January 10, 2019Inventors: Hooman ABEDIASL, Andrew George RICKMAN, Amit Singh NAGRA, Andrea TRITA, Thomas Pierre SCHRANS, Aaron John ZILKIE, Pradeep SRINIVASAN
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Publication number: 20190011799Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.Type: ApplicationFiled: September 8, 2017Publication date: January 10, 2019Inventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
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Publication number: 20180366915Abstract: A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.Type: ApplicationFiled: June 13, 2018Publication date: December 20, 2018Inventors: Aaron John Zilkie, Pradeep Srinivasan
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Patent number: 10133094Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region.Type: GrantFiled: September 8, 2017Date of Patent: November 20, 2018Assignee: Rockley Photonics LimitedInventors: Guomin Yu, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones
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Publication number: 20180294621Abstract: A laser source. In some embodiments, a multiple-output laser source includes a plurality of lasers, and a coupler having a plurality of inputs and a plurality of outputs. Each of the inputs of the coupler is connected to an output of a respective laser, and each of the outputs of the coupler is connected to an output of the multiple-output laser source. In some embodiments the laser source is connected to other equipment with a single composite connector for making an optical connection and a plurality of electrical connections.Type: ApplicationFiled: April 5, 2018Publication date: October 11, 2018Inventors: Thomas Pierre Schrans, Nicholas Kucharewski, Pradeep Srinivasan
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Publication number: 20180217469Abstract: An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).Type: ApplicationFiled: March 21, 2018Publication date: August 2, 2018Inventors: Guomin Yu, Aaron John Zilkie, Hooman Abediasl, Damiana Lerose, Amit Singh Nagra, Pradeep Srinivasan, Haydn Frederick Jones