Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for a single mode optical coupler device. In some embodiments, the device may include a multi-stage optical taper to convert light from a first mode field diameter to a second mode field diameter larger than the first mode field diameter, and a mirror formed in a dielectric layer under an approximately 45 degree angle with respect to a plane of the dielectric layer to reflect light from the multi-stage optical taper substantially perpendicularly to propagate the light in a single mode fashion. Other embodiments may be described and/or claimed.

Abstract: Apparatuses including integrated circuit (IC) optical assemblies and processes for fabrication of IC optical assemblies are disclosed herein. In some embodiments, the IC optical assemblies include an optical transmitter component electrically coupled to a first portion of a packaging substrate. The IC optical assemblies further include an optical transmitter driver component between the optical transmitter component and a second portion of the packaging substrate, wherein a first side of the optical transmitter driver component is electrically coupled to the optical transmitter component. The IC optical assemblies further include a plurality of bumps between a second side of the optical transmitter driver component and proximate the second portion of the packaging substrate, wherein the plurality of bumps are not directly coupled to the optical transmitter driver component.

Abstract: Described herein are an apparatus, system, and method for providing a vertical optical coupler (VOC) for planar photonics circuits such as photonics circuits fabricated on silicon-on-insulator (SOI) wafers. In one embodiment, the VOC comprises a waveguide made from a material having refractive index in a range of 1.45 to 3.45, the waveguide comprising: a first end configured to reflect light nearly vertical by total internal reflection between the waveguide and another medium, a second end to receive the light for reflection, and a third end to output the reflected light. The VOC couples with a Si waveguide having a first region including: a first end to receive light; and an inverted tapered end in the direction of light propagation to output the received light, wherein the inverted tapered end of the Si waveguide is positioned inside the waveguide.

Abstract: A waveguide to waveguide coupled hybrid master oscillator power amplifier (MOPA) includes a wavelength locked laser master oscillator (MO) first chip including a semiconductor substrate, a waveguide region having a gain section, one side of the MO including an integrated wavelength selective feedback element and the other side of the MO including an integrated reflective or coupling element on one side the waveguide and an emitting surface opposite the integrated reflective or coupling element for emitting light. A power amplifier (PA) second chip is stacked above or below the MO. The PA includes a semiconductor substrate including a waveguide region having a gain section, an integrated reflective or coupling element on a side of the PA aligned with light emitted from the emitting surface of the MO and a coupling grating or turning mirror and integrated lens on an opposite side of the PA for emitting an output beam.

Abstract: A waveguide to waveguide coupled hybrid master oscillator power amplifier (MOPA) includes a wavelength locked laser master oscillator (MO) first chip including a semiconductor substrate, a waveguide region having a gain section, one side of the MO including an integrated wavelength selective feedback element and the other side of the MO including an integrated reflective or coupling element on one side the waveguide and an emitting surface opposite the integrated reflective or coupling element for emitting light. A power amplifier (PA) second chip is stacked above or below the MO. The PA includes a semiconductor substrate including a waveguide region having a gain section, an integrated reflective or coupling element on a side of the PA aligned with light emitted from the emitting surface of the MO and a coupling grating or turning mirror and integrated lens on an opposite side of the PA for emitting an output beam.