Abstract: A method for forming a gapfill layer, comprising: positioning a substrate in a processing volume of a processing chamber, forming a plurality of first gapfill layers in at least one feature disposed on the substrate, comprising, for each first gapfill layer included in the plurality of first gapfill layers: forming a layer in the at least one feature by flowing a first hydrocarbon precursor gas into the processing volume and etching the layer by flowing a first etchant gas into the processing volume, and forming a second gapfill layer in the at least one feature by co-flowing a second hydrocarbon precursor gas and a second etchant gas into the processing volume.

Abstract: Embodiments of the present disclosure generally relate to a method of processing a substrate. The method includes exposing the substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a radio frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture/((boron-containing gas mixture)+hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hardmask film provides high modulus, etch selectivity, and stress for high aspect-ratio features (e.g., 10:1 or above) and smaller dimension devices (e.g., 7 nm node or below).

Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

Abstract: In some embodiments, a method includes positioning a substrate structure into a processing volume of a process chamber. The method further includes flowing a hydrocarbon precursor having C2H2 into the processing volume of the processing chamber at a precursor flow rate of about 400 sccm to about 800 sccm. The method further includes flowing an etchant gas having NH3 into the processing volume of the processing chamber at an etchant gas flow rate of about 0.1 sccm to about 250 sccm. The method further includes providing a high frequency radio frequency (HFRF) power of about 700 W to about 1500 W to the processing volume to generate a RF in the processing volume of the processing chamber. The method further includes forming a carbon based plugfill layer over the surface of the substrate structure and a carbon based plug within the feature of the substrate structure.

Abstract: A component, system, and method for improved foreline cleaning of semiconductor chambers and components are disclosed herein. In one example, a processing chamber component includes a foreline constructed from stainless steel having a circular cross sectional shape and an inner surface. The foreline further includes a first end configured to couple to a processing chamber, a second end configured to couple to a valve, and a coating disposed within the inner surface of the foreline, the coating having a thickness between about 150 nanometers and about 525 nanometer. Further, the first end includes a first flange, the second end comprises a second flange, wherein the first end and the second end are coupled by a bend. Further, the coating has properties configured to reduce depositions within the foreline.

Abstract: A goal of a gapfill deposition process may be to form a relatively flat overgrowth layer of gapfill material above a top of the pillars. The relatively flat overgrowth layer can be formed by automatically stopping the gapfill deposition process after detecting an end of a stage (e.g., a sidewall growth stage) of the gapfill process. A characteristic of the plasma, such as an impedance of the plasma may be monitored during the plasma process. Changes in the characteristic may be correlated with different stages in the process, such as different stages in the gapfill process. When the characteristic indicates, a stage in the gapfill process may be identified, and an action may be taken, such as stopping the gapfill process. This provides live monitoring of the gapfill based on plasma characteristics rather than on measurements taken after the gap fill process is complete.

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

Abstract: A gapfill precursor may be provided to a processing chamber for filling features in a semiconductor structure. The features may have different critical dimensions. An etchant configured to etch the gapfill material may also be provided with the precursor. A plasma power in the chamber may have a duty cycle of a first RF power provided during a first time duration and a second RF power provided during a second time duration, where the second RF power is less than the first RF power. The RF power levels may be selected such that the gapfill material is deposited in the bottom of the features while being etched at a top of the features during the first time, and deposited on both the bottom and top of the features during the second time, where the features having different CDs finish the gapfill process at about the same time.

Abstract: Semiconductor processing chambers and systems, as well as methods of cleaning such chambers and systems are provided. Processing chambers and systems include a chamber body that defines a processing region, a liner positioned within the chamber body that defines a liner volume, a faceplate positioned atop the liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the liner volume through a cleaning gas plenum and one or more inlet apertures. Systems and chambers include where at least one of the one or more inlet apertures is disposed in the processing region between the faceplate and a bottom wall of the chamber body.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.

Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100° C. to about 700° C. and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300° C. to about 700° C. and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000 ?/min, such as up to about 10,000 ?/min or faster.

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

Abstract: Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Abstract: Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.