Patents by Inventor Prashant Kumar KULSHRESHTHA

Prashant Kumar KULSHRESHTHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160358804
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 8, 2016
    Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Abdul Aziz KHAJA, Zheng John YE, Amit Kumar BANSAL
  • Publication number: 20160307752
    Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
    Type: Application
    Filed: June 24, 2016
    Publication date: October 20, 2016
    Inventors: Prashant Kumar KULSHRESHTHA, Sudha RATHI, Praket P. JHA, Saptarshi BASU, Kwangduk Douglas LEE, Martin J. SEAMONS, Bok Hoen KIM, Ganesh BALASUBRAMANIAN, Ziqing DUAN, Lei JING, Mandar B. PANDIT
  • Patent number: 9390910
    Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: July 12, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kumar Kulshreshtha, Sudha Rathi, Praket P. Jha, Saptarshi Basu, Kwangduk Douglas Lee, Martin J. Seamons, Bok Hoen Kim, Ganesh Balasubramanian, Ziqing Duan, Lei Jing, Mandar B. Pandit
  • Publication number: 20160099147
    Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
    Type: Application
    Filed: November 20, 2014
    Publication date: April 7, 2016
    Inventors: Prashant Kumar KULSHRESHTHA, Sudha RATHI, Praket P. JHA, Saptarshi BASU, Kwangduk Douglas LEE, Martin J. SEAMONS, Bok Hoen KIM, Ganesh BALASUBRAMANIAN, Ziqing DUAN, Lei JING, Mandar B. PANDIT
  • Publication number: 20160049323
    Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
    Type: Application
    Filed: August 12, 2015
    Publication date: February 18, 2016
    Inventors: Zheng John YE, Jay D. PINSON, II, Hiroji HANAWA, Jianhua ZHOU, Xing LIN, Ren-Guan DUAN, Kwangduk Douglas LEE, Bok Hoen KIM, Swayambhu P. BEHERA, Sungwon HA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA- ALVAREZ, Prashant Kumar KULSHRESHTHA, Jason K. FOSTER, Mukund SRINIVASAN, Uwe P. HALLER, Hari K. PONNEKANTI
  • Publication number: 20150228463
    Abstract: Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber.
    Type: Application
    Filed: February 11, 2015
    Publication date: August 13, 2015
    Inventors: Pramit MANNA, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Martin Jay SEAMONS, Abhijit Basu MALLICK, Bok Hoen KIM, Mukund SRINIVASAN