Abstract: Solid assemblies having a composite dielectric spacer and processes for fabricating the solid assemblies are provided. The composite dielectric spacer can include, in some embodiments, a first dielectric layer and a second dielectric layer having a mutual interface. The composite dielectric spacer can separate a contact member from a conductive interconnect member, thus reducing the capacitance between such members with respect to solid assemblies that include one of first dielectric layer or the second dielectric layer. The composite dielectric spacer can permit maintaining the real estate of an interface between the conductive interconnect and a trench contact member that has an interface with a carrier-doped epitaxial layer embodying or constituting a source contact region or a drain contact region of a field effect transistor. The trench contact member can form another interface with the conductive interconnect member, providing a satisfactory contact resistance therebetween.

Abstract: The present invention relates to a process for the preparation of finerenone, a compound of formula I, and intermediates thereof. In particular, the present invention relates to a novel diastereomeric salt of an intermediate of finerenone, a compound of Formula IVa, a process for the preparation thereof, and use thereof in the preparation of finerenone.

Abstract: The systems and methods relate to cyclically inflating and deflating a lung. The lung can be stored and transported while pumping a gas into the lung and removing another gas from the lung. The cyclical inflation and deflation of the lung can be performed at a rate enhanced or optimized for lung performance.

Abstract: Systems and methods herein generally relate to prolonging viability of bodily tissue, especially an organ, by adjusting pressure as needed to maintain a constant pressure within the organ even during external pressure fluctuations due, for example, to transportation of the organ in an airplane. The systems and methods herein can include an electronic pump that pumps gas into an organ and a mechanical pressure regulator to release gas based on organ pressure.

Abstract: A system and method for maintaining an oxygen concentration of a biological sample. The oxygen concentration can be maintained by measuring the oxygen concentration within the biological sample and adjusting a rate of an oxygen supplier in response to this measurement. For example, when the oxygen concentration is below a threshold, oxygen can be delivered to the biological sample at a higher rate.

Abstract: A detection circuit includes a tunable delay circuit that generates a delayed signal and that receives a supply voltage. The detection circuit includes a control circuit that adjusts a delay provided by the tunable delay circuit to the delayed signal. The detection circuit includes a time-to-digital converter circuit that converts the delay provided by the tunable delay circuit to the delayed signal to a digital code and adjusts the digital code based on changes in the supply voltage. The control circuit causes the tunable delay circuit to maintain the delay provided to the delayed signal constant in response to the digital code reaching an alignment value. The detection circuit may continuously monitor timing margin of a data signal relative to a clock signal and update the digital code in every clock cycle. The detection circuit may be a security sensor that detects changes in the supply voltage.

Abstract: Solid assemblies having a composite dielectric spacer and processes for fabricating the solid assemblies are provided. The composite dielectric spacer can include, in some embodiments, a first dielectric layer and a second dielectric layer having a mutual interface. The composite dielectric spacer can separate a contact member from a conductive interconnect member, thus reducing the capacitance between such members with respect to solid assemblies that include one of first dielectric layer or the second dielectric layer. The composite dielectric spacer can permit maintaining the real estate of an interface between the conductive interconnect and a trench contact member that has an interface with a carrier-doped epitaxial layer embodying or constituting a source contact region or a drain contact region of a field effect transistor. The trench contact member can form another interface with the conductive interconnect member, providing a satisfactory contact resistance therebetween.

Abstract: Devices, transistor structures, systems, and techniques are described herein related to coupling backside and frontside metallization layers that are on opposite sides of a device layer. A device includes a transistor having semiconductor structures extending between a source and a drain, and a gate between the source and drain, a bridge via extending between a frontside metallization over the transistor and a backside metallization below the transistor, and a thin insulative liner between the bridge via and components of the transistor.

Abstract: Integrated circuit structures having source or drain structures with a high germanium concentration capping layer are described. In an example, an integrated circuit structure includes source or drain structures including an epitaxial structure embedded in a fin at a side of a gate stack. The epitaxial structure has a lower semiconductor layer and a capping semiconductor layer on the lower semiconductor layer with an abrupt interface between the capping semiconductor layer and the lower semiconductor layer. The lower semiconductor layer includes silicon, germanium and boron, the germanium having an atomic concentration of less than 40% at the abrupt interface. The capping semiconductor layer includes silicon, germanium and boron, the germanium having an atomic concentration of greater than 50% at the abrupt interface and throughout the capping semiconductor layer.

Abstract: A system configured to receive health data pertaining to a user; select a user health profile from a plurality of user health profiles based on the collected health data, each of the plurality of user health profiles being associated with a health and wellness program and a set of interventions; receive user activity data and updated health data pertaining to, or during the user's participation in the associated health and wellness program from health devices; select a new set of interventions based on the user activity data; and select a new user health profile from the plurality of user health profiles based on at least one of the user activity data and the updated health data.

Abstract: A FET including a hybrid gate spacer separating a gate electrode from at least one of a source, a drain, or source/drain contact metallization. The hybrid spacer may include a low-k dielectric material for a reduction in parasitic capacitance. The hybrid spacer may further include one or more other dielectric materials of greater relative permittivity that may protect one or more surfaces of the low-k dielectric material from damage by subsequent transistor fabrication operations. The hybrid spacer may include a low-k dielectric material separating a lower portion of a gate electrode sidewall from the source/drain terminal, and a dielectric spacer cap separating to an upper portion of the gate electrode sidewall from the source/drain terminal. The hybrid spacer may have a lower total capacitance than conventional spacers while still remaining robust to downstream fabrication processes. Other embodiments may be described and/or claimed.

Abstract: Fin shaping, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure above a substrate. The protruding fin portion has substantially vertical upper sidewalls and outwardly tapered lower sidewalls. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region is at a first side of the gate stack, and a second source or drain region is at a second side of the gate stack opposite the first side of the gate stack.

Abstract: Solid assemblies having a composite dielectric spacer and processes for fabricating the solid assemblies are provided. The composite dielectric spacer can include, in some embodiments, a first dielectric layer and a second dielectric layer having a mutual interface. The composite dielectric spacer can separate a contact member from a conductive interconnect member, thus reducing the capacitance between such members with respect to solid assemblies that include one of first dielectric layer or the second dielectric layer. The composite dielectric spacer can permit maintaining the real estate of an interface between the conductive interconnect and a trench contact member that has an interface with a carrier-doped epitaxial layer embodying or constituting a source contact region or a drain contact region of a field effect transistor. The trench contact member can form another interface with the conductive interconnect member, providing a satisfactory contact resistance therebetween.

Abstract: Integrated circuit structures having source or drain structures with low resistivity are described. In an example, integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each epitaxial structure of the first and second source or drain structures include silicon, germanium, gallium and boron. The first and second source or drain structures have a resistivity less than 2E-9 Ohm cm2.

Abstract: Integrated circuit structures having recessed self-aligned deep boundary vias are described. For example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts extends over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A backside metal routing layer is extending beneath one or more of the plurality of gate lines and beneath one or more of the plurality of trench contacts. A conductive structure couples the backside metal routing layer to one of the one or more of the plurality of trench contacts. The conductive structure includes a pillar portion in contact with the one of the one or more of the plurality of trench contacts, the pillar portion on a line portion, the line portion in contact with and extending along the backside metal routing layer.

Abstract: Integrated circuit structures having backside power staple are described. In an example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts is extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A front-side metal routing layer is extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts. A backside metal routing layer is extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer. A conductive feedthrough structure couples the backside metal routing layer to the front-side metal routing layer.

Abstract: A voltage detection circuit includes a tunable delay circuit that receives a supply voltage and that generates a delayed signal in response to an input signal. A control circuit causes a first adjustment in a delay provided by the tunable delay circuit to the delayed signal. An error detection circuit generates an error indication in an error signal in response to a change in a timing of the delayed signal relative to a clock signal caused by the first adjustment in the delay provided to the delayed signal. The control circuit causes a second adjustment in the delay provided by the tunable delay circuit to the delayed signal in response to the error indication. The error detection circuit causes the error signal to be indicative of the supply voltage reaching a threshold voltage after the second adjustment in the delay.

Abstract: Solid assemblies having a composite dielectric spacer and processes for fabricating the solid assemblies are provided. The composite dielectric spacer can include, in some embodiments, a first dielectric layer and a second dielectric layer having a mutual interface. The composite dielectric spacer can separate a contact member from a conductive interconnect member, thus reducing the capacitance between such members with respect to solid assemblies that include one of first dielectric layer or the second dielectric layer. The composite dielectric spacer can permit maintaining the real estate of an interface between the conductive interconnect and a trench contact member that has an interface with a carrier-doped epitaxial layer embodying or constituting a source contact region or a drain contact region of a field effect transistor. The trench contact member can form another interface with the conductive interconnect member, providing a satisfactory contact resistance therebetween.

Abstract: Integrated circuit (IC) devices include transistors with gate, source and drain contact metallization, some of which are jumpered together by a metallization that is recessed below a height of other metallization that is not jumpered. The jumper metallization may provide a local interconnect between terminals of one transistor or adjacent transistors, for example between a gate of one transistor and a source/drain of another transistor. The jumper metallization may not induce the same pitch constraints faced by interconnect line metallization levels employed for more general interconnection. In some examples, a static random-access memory (SRAM) bit-cell includes a jumper metallization joining two transistors of the cell to reduce cell height for a given feature patterning capability.

Abstract: Gate-all-around integrated circuit structures having necked features, and methods of fabricating gate-all-around integrated circuit structures having necked features, are described. In an example, an integrated circuit structure includes a vertical stack of horizontal nanowires. Each nanowire of the vertical stack of horizontal nanowires has a channel portion with a first vertical thickness and has end portions with a second vertical thickness greater than the first vertical thickness. A gate stack is surrounding the channel portion of each nanowire of the vertical stack of horizontal nanowires.