Abstract: A method is for analyzing the correlation between different line loss actions, which records, for each individual to which line loss actions occur, all the line loss actions that occur to the individual; and counts, based on two categorization manners: by individual and by line loss action, line loss actions recorded in the database, to obtain line loss action counting results corresponding to respective categorization manners; then, based on the two counting results, collects respective multi-line loss action sequences; and acquires probability data as a data source for probability calculation, to obtain line loss action occurrence conditional probabilities for different line loss actions, so that a targeted a targeted loss reduction plan can be formulated.

Abstract: The invention discloses a quasi-volumetric sensing system and method. Plural short-range order (SRO) units are configured on the carrier of a quasi-volumetric device, and arranged as an array, i.e. a long-range order (LRO) unit. Protrusions, configured on the SRO units, can modify the wettability of the carrier to control the liquid volume retained thereon so that the precise volume of the liquid sample or droplets are calculated. Based on the applied force on the LRO unit and the gradient of hydrophilicity-hydrophobicity on the surface, the redundant volume of the liquid sample is removed. Macromolecules, e.g. antibodies, complements, receptor proteins, aptamers, oligosaccharides or oligonucleotides, configured on the protrusions are coupled to specific molecules in the liquid sample or droplets so as to determine characteristics of the specific molecules. Therefore, the open chip device of the invention can be used to achieve the quasi-volumetric measurement and the analysis of specific molecules.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may identify a first timer associated with a first antenna and a second timer associated with a second antenna. The UE may identify an expiration of the first timer associated with the first antenna. The UE may determine, based at least in part on the identified expiration of the first timer, whether a remaining time of the second timer associated with the second antenna is less than a timer threshold. The UE may select, based at least in part on the determination that the remaining time of the second timer is less than the timer threshold, the second antenna. Numerous other aspects are provided.

Abstract: A method includes obtaining identity information of a reservation person making a reservation for renting a target room and face image information of a check-in person who will check in to the target room; uploading the identity information of the reservation person and the face image information of the check-in person to an electronic identity authentication server storing electronic identity information; in response that the reservation person is the same as the check-in person, generating token information for opening the target room.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may detect a trigger for entering an antenna switched diversity low power mode. The UE may switch from a first antenna switched diversity mode with a first interval between antenna switched diversity measurements to a second antenna switched diversity mode with a second interval between the antenna switched diversity measurements based at least in part on detecting the trigger for entering the antenna switched diversity low power mode. Numerous other aspects are provided.

Abstract: Methods, systems, and devices for timing signal delay compensation in a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous relative to an input signal. To support asynchronous timing, a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. In accordance with examples as disclosed herein, a memory device may include delay components having a variable and configurable impedance, where the configurable impedance may be based at least in part on a configuration signal generated at the memory device. A configuration signal may be generated based on fabrication characteristics of the memory device, or based on operating conditions of the memory device, or various combinations thereof.

Abstract: Embodiments of this specification provide methods and systems for operating an IoT device An exemplary method comprises: receiving, by a user equipment, an operation instruction for the IoT device from a user, wherein the user equipment is communicatively coupled with the IoT device; identifying, by the user equipment, a biometric feature of the user; verifying, by the user equipment, an identity of the user based on the biometric feature; signing, by the user equipment, the operation instruction using a first user key of the user in response to the identity of the user being verified; transmitting, by the user equipment, the signed operation instruction to the IoT device; verifying, by the IoT device, the signed operation instruction using a second user key of the user; and executing, by the IoT device, the operation instruction in response to the signed operation instruction being verified.

Abstract: Local word line driver device, memory device, and fabrication method are provided. A local word line driver device includes a substrate and an array of transistor structures formed on the substrate. The transistor structures are configured in rows and columns. The substrate includes a plurality of first field regions each between adjacent rows of the transistor structures, and a plurality of second field regions each between adjacent columns of the transistor structures. A deep trench isolation structure is formed in at least one field region of: the plurality of first field regions or the plurality of second field regions, of the substrate.

Abstract: The present specification provides a blockchain-based offline resource transfer method and apparatus. A transferor terminal and a receiver terminal of offline resource transfer include multiple execution environments. Multiple computing nodes constructed based on the execution environments further constitute an offline blockchain network as blockchain nodes.

Abstract: A three-dimensional folding self-driving flexible respiration monitoring sensor and the preparing method thereof is disclosed. In the present invention a first friction unit and a second friction unit are set on a bottom of the box, which comprise a substrate, a conductive electrode layer and a friction layer respectively; the second friction unit is fixed on the bottom of the box; a friction layer of the first friction unit faces a friction layer of the second friction unit; a back plate is set on a substrate of the first friction unit; a balloon is between the box and the back plate; an inlet tube connects the balloon and the box, which is on a side wall of the box; the conductive electrode layer of the first friction layer and the second friction layer are connected to the electrometer respectively. Micro-energy of the respiration is adopted to monitor the breathing.

Abstract: The present disclosure relates to a method and a device for simulating discharge, and a computer device. The method includes steps of: acquiring forcing data; simulating the discharge of a river basin to be measured according to the forcing data and a calibrated hydrological model of the river basin, to obtain a simulated discharge of the river basin; the calibrated hydrological model is a hydrological model including calibrated model parameters; the calibrated model parameters are obtained by calibrating model parameters of an initial hydrological model, according to a converted discharge of the river basin to be measured and the GRACE-derived total water storage changes of the river basin to be measured.

Abstract: An electronic device includes a first input that receives an input signal when the electronic device is in operation, a long L gate comprising a long L transistor, a first activation transistor coupled to a gate of the long L transistor, and a second activation transistor coupled to the gate of the long L transistor. The electronic device also includes a switch directly coupled to a second input of the long L gate, a path directly coupled to a first output of the long L gate, a capacitor coupled to the path, and a second output that when in operation transmits an output signal as a delayed signal with respect to the input signal.

Abstract: Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers.

Abstract: Methods, systems, and devices for timing signal delay compensation in a memory device are described. In some memory devices, operations for accessing memory cells may be performed with timing that is asynchronous relative to an input signal. To support asynchronous timing, a memory device may include delay components that support generating a timing signal having aspects that are delayed relative to an input signal. In accordance with examples as disclosed herein, a memory device may include delay components having a variable and configurable impedance, where the configurable impedance may be based at least in part on a configuration signal generated at the memory device. A configuration signal may be generated based on fabrication characteristics of the memory device, or based on operating conditions of the memory device, or various combinations thereof.

Abstract: A thin film transistor, a manufacturing method thereof, and an electronic device are provided. The thin film transistor comprises a passivation layer disposed on the active layer, wherein a step of forming the passivation layer includes forming an insulating first metal oxide layer, the first metal oxide layer being capable of moving a Fermi level of the active layer to a side of a forbidden band to a valence band.

Abstract: In an embodiment, a server receives—a digital key request for a digital key to unlock a smart lock. A biometric feature request for collecting a biometric feature from the mobile device is generated and sent to the mobile device. A biometric feature corresponding to the biometric feature request is received. Identity information and a device identifier of the smart lock is received from another server. Based on the identity information, a matching biometric feature stored in a biometric feature database is determined. An identity of a user corresponding to the received biometric feature is verified based on the matching biometric feature. After the identity of the user is verified, smart lock information is identified. A digital key for unlocking the smart lock is generated based on the digital key request and the smart lock information and sent to the mobile device.

Abstract: A strip for an electronic device senses a liquid sample. The strip includes a substrate having a first surface, a plurality of protrusions disposed on the first surface, and each having a width, and a hydrophilic layer having a layer surface disposed on the first surface and the plurality of protrusions, and having a second surface opposite to the layer surface, whereby the liquid sample and the second surface have a contact angle therebetween ranging from 2 to 85 degrees when the liquid sample is disposed on the hydrophilic layer.

Abstract: A method for forming a gate structure of a 3D memory device is provided. The method comprises forming an etch stop structure in a first wafer, forming a first through contact in contact with the etch stop structure, bonding the first wafer to a second wafer to electrically connect the first through contact to a CMOS device of the second wafer, and forming a through substrate contact penetrating a first substrate of the first wafer and the etch stop structure, and in electrically contact with the CMOS device through the first through contact.

Abstract: An object tracking method includes: obtaining at least one image acquired by at least one image acquisition device; obtaining a first appearance feature of a target object and a first spatial-temporal feature of the target object based on the at least one image; obtaining an appearance similarity and a spatial-temporal similarity between the target object and each global tracking object in a currently recorded global tracking object queue; based on determining that the target object matches a target global tracking object based on the appearance similarity and the spatial-temporal similarity, allocating a target global identifier corresponding to the target global tracking object to the target object; determining, using the target global identifier, a plurality of associated images acquired by a plurality of image acquisition devices associated with the target object; and generating, based on the plurality of associated images, a tracking trajectory matching the target object.

Abstract: A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.