Patents by Inventor Qi Lin

Qi Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240166617
    Abstract: The invention provides novel phosphoinositide 3 kinase beta-selective inhibitors and pharmaceutical compositions thereof, as well as methods of their preparation and use, in therapy of various diseases and conditions, such as solid tumors.
    Type: Application
    Filed: January 25, 2022
    Publication date: May 23, 2024
    Inventors: Jean Zhao, Qi Wang, Xiang Y. Yu, Huimin Cheng, Peiyu Zhang, Zhixiong Lin, Lei Fang, Songling Ma
  • Publication number: 20240153500
    Abstract: Implementations of the present specification provide a data processing method, apparatus, and device. The method includes: obtaining to-be-detected target data, and obtaining a target probability that the target data corresponds to each candidate user intention, where the target data includes input data of a user in a human-computer interaction process; dividing the target data to obtain a plurality of pieces of subdata, and obtaining, based on a predetermined gradient integration algorithm, a contribution of each piece of subdata to a correspondence between the target data and each candidate user intention; and determining a target user intention corresponding to the target data based on the target probability that the target data corresponds to each candidate user intention and the contribution of each piece of subdata to the correspondence between the target data and each candidate user intention.
    Type: Application
    Filed: November 2, 2023
    Publication date: May 9, 2024
    Inventors: Wenbiao ZHAO, Jinzhen LIN, Zhenzhe YING, Lanqing XUE, Weiqiang WANG, Ke XU, Qi LI
  • Patent number: 11971368
    Abstract: The present disclosure provides a determination method, an elimination method and an apparatus for an electron microscope aberration. The determination method comprises: training a neural network for image recognition using a plurality of electron microscope simulation images to obtain an electron microscope image recognition model; recognizing an electron microscope image of an experimental sample using the electron microscope image recognition model to obtain the electron microscope simulation image corresponding to the electron microscope image of the experimental sample; and obtaining the corresponding set aberration as an imaging aberration of the electron microscope image of the experimental sample according to the electron microscope simulation image corresponding to the electron microscope image of the experimental sample.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: April 30, 2024
    Assignee: SOUTH CHINA AGRICULTURAL UNIVERSITY
    Inventors: Fang Lin, Qi Zhang, Chen Wang
  • Patent number: 11953224
    Abstract: A device providing automatic control of temperature for an environment of a working station includes an air box, a baffle member, and a driving assembly. The air box is coupled to a machine defining a working space which the working station is in. The air box defines an opening. The opening allows cooling air to be introduced into the working space. The baffle member is slidably coupled to the air box at the opening. The driving assembly coupled to the baffle member drives the baffle member to cover the opening completely, to cover the opening partially, or to leave the opening uncovered in accordance with a difference between a current temperature of the working space and a desired target temperature of the working space. A related system and method are also disclosed.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: April 9, 2024
    Assignee: TRIPLE WIN TECHNOLOGY(SHENZHEN) CO.LTD.
    Inventors: Qi-Qi Zhu, Yu-Tsang Tu, Yen-Sheng Lin, Ying-Quan Zhao
  • Publication number: 20240111588
    Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.
    Type: Application
    Filed: September 29, 2022
    Publication date: April 4, 2024
    Inventors: Jing Jing Wei, Yue Wang, Shu Jun Tang, Yang Kang, Yi Fan Wu, Qi Han Zheng, Jia Lin Wang
  • Publication number: 20240097434
    Abstract: A method for detecting abnormal direct current voltage measurement in a modular multilevel converter high voltage direct current transmission system is provided. In the method, a valve group voltage at a detection pole is obtained, voltages at voltage measurement points at the detection pole are collected, and comparison and determination are performed based on the actual arrangement of the voltage measurement points, and then whether an abnormal measurement occurs at each of the voltage measurement points is determined.
    Type: Application
    Filed: May 18, 2022
    Publication date: March 21, 2024
    Applicant: ELECTRIC POWER RESEARCH INSTITUTE. CHINA SOUTHERN POWER GRID
    Inventors: Qinlei CHEN, Shuyong LI, Qi GUO, Libin HUANG, Xuehua LIN, Zhijiang LIU, Deyang CHEN, Chao LUO, Guanming ZENG, Mengjun LIAO, Lijun DENG, Liu CUI, Zhida HUANG, Haiping GUO, Tianyu GUO
  • Publication number: 20240087955
    Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 14, 2024
    Inventors: Yi XU, Xianyuan ZHAO, Zhimin QI, Aixi ZHANG, Geraldine VASQUEZ, Dien-Yeh WU, Wei LEI, Xingyao GAO, Shirish PETHE, Wenting HOU, Chao DU, Tsung-Han YANG, Kyoung-Ho BU, Chen-Han LIN, Jallepally RAVI, Yu LEI, Rongjun WANG, Xianmin TANG
  • Publication number: 20240079493
    Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.
    Type: Application
    Filed: September 1, 2022
    Publication date: March 7, 2024
    Inventors: GUAN-QI CHEN, CHEN CHI HSIAO, KUN-TSANG CHUANG, FANG YI LIAO, YU SHAN HUNG, CHUN-CHIA CHEN, YU-SHAN HUANG, TUNG-I LIN
  • Patent number: 11923685
    Abstract: A reactive power-voltage control method for integrated transmission and distribution networks is provided. The reactive power-voltage control method includes: establishing a reactive power-voltage control model for a power system consisting of a transmission network and a plurality of distribution networks; performing a second order cone relaxation on a non-convex constraint of the plurality of distribution network constraints to obtain the convex-relaxed reactive power-voltage control model; solving the convex-relaxed reactive power-voltage control model to acquire control variables of the transmission network and control variables of each distribution network; and controlling the transmission network based on the control variables of the transmission network and controlling each distribution network based on the control variables of the distribution network, so as to realize coordinated control of the power system.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: March 5, 2024
    Assignees: TSINGHUA UNIVERSITY, STATE GRID JIBEI ELECTRIC POWER COMPANY
    Inventors: Bin Wang, Yanling Du, Wenchuan Wu, Haitao Liu, Hongbin Sun, Guannan Wang, Qinglai Guo, Qi Wang, Chenhui Lin
  • Patent number: D988983
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: June 13, 2023
    Assignee: Shenzhen Worgo Technology Limited.
    Inventor: Qi Lin
  • Patent number: D996434
    Type: Grant
    Filed: July 12, 2022
    Date of Patent: August 22, 2023
    Inventors: Gengping Jiang, Qi Lin
  • Patent number: D997091
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: August 29, 2023
    Assignee: Shenzhen Worgo Technology Limited.
    Inventor: Qi Lin
  • Patent number: D1003869
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: November 7, 2023
    Assignee: TOZO INC
    Inventor: Qi Lin
  • Patent number: D1011346
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: January 16, 2024
    Assignee: ZHUHAI HOKSI TECHNOLOGY CO., LTD
    Inventors: Gengping Jiang, Qi Lin
  • Patent number: D1019613
    Type: Grant
    Filed: September 30, 2022
    Date of Patent: March 26, 2024
    Assignee: TOZO INC
    Inventor: Qi Lin
  • Patent number: D1019634
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: March 26, 2024
    Assignee: TOZO INC
    Inventor: Qi Lin
  • Patent number: D1020705
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: April 2, 2024
    Assignee: TOZO INC
    Inventor: Qi Lin
  • Patent number: D1021865
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: April 9, 2024
    Assignee: TOZO INC
    Inventor: Qi Lin
  • Patent number: D1025276
    Type: Grant
    Filed: August 5, 2020
    Date of Patent: April 30, 2024
    Assignee: LIAONING QINGYANG EXPLOSIVE MATERIALS CO., LTD
    Inventors: Tao Jiang, Dingming Lin, Jin Zhu, Defei Gao, Guangjun Li, Lidan Jing, Xingzhen Wang, Xiongfei Yang, Ji Fan, Guopeng Ban, Qi Sun
  • Patent number: D1026803
    Type: Grant
    Filed: February 29, 2024
    Date of Patent: May 14, 2024
    Assignee: Shenzhen volcan Technology Co., Ltd.
    Inventors: Shukai Lin, Qi Wang