Abstract: The present invention relates to a crystal form of 3-(4-methyl-1H-imidazol-1-yl)-5-trifluoromethylaniline monohydrochloride and the use thereof. Specifically, disclosed are a crystal form A of a monohydrochloride anhydrous substance of 3-(4-methyl-1H-imidazol-1-yl)-5-trifluoromethylaniline monohydrochloride, a method for preparing the crystal form A and the use of the crystal form in the synthesis of nilotinib. The crystal form A of the present invention has good stability and purity, and can be directly used in the preparation and production of nilotinib. The method for preparing nilotinib in the present invention is easy to operate and has high industrial application value.

Abstract: A method for manufacturing a memory and a memory is provided. The method for manufacturing a memory includes: providing a substrate; stacking an electrode support structure, a protective layer and a first mask layer in sequence on the substrate; patterning the first mask layer on an array region, and etching the protective layer, the electrode support structure and the substrate by using the patterned first mask layer as a mask, to form capacitor holes penetrating the protective layer and the electrode support structure and extending into the substrate; removing the first mask layer; and forming a first electrode layer on side walls and bottom walls of the capacitor holes, a top surface of the first electrode layer being flush with a top surface of the electrode support structure.

Abstract: An embodiment of the application provides a method for forming a semiconductor structure. The semiconductor structure includes a first region and a second region. The method includes the following steps: providing a base, an insulating layer, and a mask layer that are stacked in sequence, where the first region has at least one trench penetrating the mask layer and the insulating layer, and the mask layer has an upper surface in the second region higher than that in the first region; forming a first protection layer, where an upper surface and a sidewall of the mask layer in the first region are covered with the first protection layer; after the first protection layer is formed, removing the mask layer in the second region; subsequent to removal of the mask layer in the second region, removing the first protection layer; and removing the mask layer in the first region.

Abstract: An embodiment of the disclosure provides a method for manufacturing a semiconductor structure, including: providing a substrate, where the substrate has a peripheral region and an array region; stacking and forming an insulating layer and a mask layer with a mask pattern on the substrate; etching the insulating layer with the mask layer as a mask to form a contact hole penetrating the insulating layer at the array region; reserving the mask layer; in a direction perpendicular to a surface of the substrate, providing a thickness difference between the mask layer of the peripheral region and the mask layer of the array region; forming a first material layer; forming a second material layer; etching a part of the mask layer with the second material layer as the mask; and removing the remaining second material layer, the remaining mask layer and the first material layer on the remaining mask layer.

Abstract: A method for manufacturing a semiconductor structure includes: a substrate is provided, in which the substrate is provided with a peripheral area and an array area; an insulation layer is formed on the substrate; a first mask layer with a first mask pattern is formed on the insulation layer; the insulation layer is etched by taking the first mask layer as a mask, to form a contact hole in the array area; a first electrode layer is formed; a second mask layer with a second mask pattern is formed, in which the second mask layer is arranged on the first electrode layer; and the first electrode layer and the first mask layer are etched by taking the second mask layer as a mask until the insulation layer in the array area is exposed, in which a remaining portion of the first electrode layer forms a lower electrode layer.

Abstract: Embodiments provide a memory and a fabrication method thereof, and relates to the field of storage device technology to solve the technical problem of lower storage density of the memory. The fabrication method of the memory includes: providing a substrate including a central region and an edge region connected to each other, a first contact structure electrically connected to a wordline structure in the substrate being formed in the edge region; forming a second contact structure electrically connected to the first contact structure on the edge region; forming a capacitor structure electrically connected to the wordline structure on the central region; forming a third contact structure electrically connected to the second contact structure on the second contact structure; and forming a transistor structure electrically connected to the wordline structure on the capacitor structure and the third contact structure.

Abstract: An array structure of capacitors are provided. The array structure of capacitors includes a substrate and a first connection pad, a second connection pad, a first capacitive structure and a second capacitive structure that are disposed on the substrate. The first capacitive structure is disposed outside the second capacitive structure and adjacent to an edge of the substrate. The bottom surface of the first capacitive structure towards the substrate and the top surface of the first connection pad are disposed at intervals.

Abstract: A manufacturing method of a semiconductor structure is disclosed, which includes: an initial structure is provided; a filling layer covering a spacer is formed on the initial structure; a filling layer with a first preset thickness is removed at a high first etching rate through a first etching process, then a filling layer with a second preset thickness is removed at a low second etching rate through a second etching process, and the partial spacer is exposed; and the filling layer and the spacer are patterned.

Abstract: A Dynamic Random Access Memory (DRAM) and a manufacturing method thereof are provided. The DRAM comprises a substrate and connection pads and capacitors disposed on the substrate. Here, the capacitor comprises a first electrode layer; the first electrode layer is provided with an extension part extending towards the substrate, and the extension part is coated on a top surface and a side surface of the connection pad.

Abstract: A method for manufacturing a semiconductor structure includes: a first mask layer is formed on a dielectric layer, in which a first etching hole extending along a first direction parallel to the dielectric layer is formed in the first mask layer; a side of the first mask layer away from the dielectric layer is planarized; a second mask layer is formed on the first mask layer, in which a second etching hole extending along a second direction parallel to the dielectric layer is formed in the second mask layer, the first etching hole and the second etching hole constitute an etching hole; and the dielectric layer is etched along the etching hole to form the capacitor hole.

Abstract: The method for preparing the hole in the semiconductor device includes: providing a base to be etched and forming a mask layer on the base to be etched; forming a first pattern layer arranged in an array on the mask layer; etching the mask layer by using the first pattern layer as a mask to form a first hole and a second pattern layer; depositing a protective layer on a side of the second pattern layer away from the base to be etched, the protective layer simultaneously covering a side wall and a bottom portion of the first hole; etching the protective layer which covers the bottom portion of the first hole; and etching a supporting layer by using the second pattern layer and the protective layer which covers the side wall of the first hole as a mask to form a second hole.

Abstract: The present invention relates to a crystal form of 3-(4-methyl-1H-imidazol-1-yl)-5-trifluoromethylaniline monohydrochloride and the use thereof. Specifically, disclosed are a crystal form A of a monohydrochloride anhydrous substance of 3-(4-methyl-1H-imidazol-1-yl)-5-trifluoromethylaniline monohydrochloride, a method for preparing the crystal form A and the use of the crystal form in the synthesis of nilotinib. The crystal form A of the present invention has good stability and purity, and can be directly used in the preparation and production of nilotinib. The method for preparing nilotinib in the present invention is easy to operate and has high industrial application value.

Abstract: System and methods for automatically publishing Representational State Transfer (REST) Application Programming Interface (API) changes in a cloud environment are described. A publish/subscribe server (PSS) may receive from a subscriber a customized request for monitoring a registered REST API supported by a REST service provider (RSP) and registered with the PSS. The subscriber is configured to invoke the registered REST API at the RSP. The PSS may monitor the registered REST API for any changes at the RSP based on the customized request. In response to a determination that the registered REST API is changed at the RSP, the PSS may generate a REST API change report indicating a change event occurred to the registered REST API at the RSP after being registered with the PSS. The PSS may then transmit the REST API change report to the subscriber. The subscriber is configured to not invoke the registered REST API at the RSP based on the REST API change report.

Abstract: A system and method for generating a multi-dimensional data structures are provided. One or more data sources including data formats are obtained. Based on data processing requirements, a multi-dimensional data structured is developed and processing definitions for the source data is developed including the alignment of data attributes and the definition of metric calculations. Thereafter, the source data may be queried using the definitions. Additionally, the data definitions may be dynamically modified without requiring the modification of the source data.

Abstract: A system, method and data structure for processing a sequential set of data. A set of data is processed such the repetitive sequences of data are represented by a value and an offset of the last array element in the sequence. The resulting compressed array facilitates binary searching of data element values, modification of data element values, and/or addition/deletion of data array elements without requiring a regeneration of the array.

Abstract: The present invention discloses a method and apparatus for handoff between base stations. A target base station bears its PILOT_INC information into a handoff request acknowledge message to inform a source base station when sending a handoff request acknowledge message to the source base station after receiving a handoff request from the source base station, thus, even if a UE requesting handoff reports PILOT_PN_PHASE under the target BS in a residual set, the source BS can determine PILOT_PN corresponding to the PILOT_PN_PHASE through the PILOT_INC information of the target base station, thereby completing cell handoff between the base stations successfully. The present invention is a supplement to the existing handoff between the base stations with configurations of the PILOT_INC information being different, and augments the success rate of handoff between the base stations of the UE, thereby improving the traffic service quality of a CDMA system.

Abstract: A system, method and data structure for processing a sequential set of data. A set of data is processed such the repetitive sequences of data are represented by a value and an offset of the last array element in the sequence. The resulting compressed array facilitates binary searching of data element values, modification of data element values, and/or addition/deletion of data array elements without requiring a regeneration of the array.

Abstract: The present invention discloses a method and apparatus for handoff between base stations. A target base station bears its PILOT_INC information into a handoff request acknowledge message to inform a source base station when sending a handoff request acknowledge message to the source base station after receiving a handoff request from the source base station, thus, even if a UE requesting handoff reports PILOT_PN_PHASE under the target BS in a residual set, the source BS can determine PILOT_PN corresponding to the PILOT_PN_PHASE through the PILOT_INC information of the target base station, thereby completing cell handoff between the base stations successfully. The present invention is a supplement to the existing handoff between the base stations with configurations of the PILOT_INC information being different, and augments the success rate of handoff between the base stations of the UE, thereby improving the traffic service quality of a CDMA system.

Abstract: A system and method for generating a multi-dimensional data structures are provided. One or more data sources including data formats are obtained. Based on data processing requirements, a multi-dimensional data structured is developed and processing definitions for the source data is developed including the alignment of data attributes and the definition of metric calculations. Thereafter, the source data may be queried using the definitions. Additionally, the data definitions may be dynamically modified without requiring the modification of the source data.